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  Datasheet File OCR Text:
 BC856AW/BW BC857AW/BW BC858AW/BW/CW
General Purpose Transistor PNP Silicon
P b Lead(Pb)-Free
1 BASE
COLLECTOR 3
3
1
2
2 EMITTER
SOT-323(SC-70)
MaximumRatings (TA=25Cunless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage
BC856 BC857 BC858 BC856 BC857 BC858 BC856 BC857 BC858
VCEO
-65 -45 -30 -80 -50 -30 -5.0 -5.0 -5.0 100 150 833 -55 to +150 -55 to +150
V
Collector-Base Voltage
VCBO
V
Emitter-Base Voltage
VEBO IC PD RJA TJ Tstg
V
Collector Current-Continuous Total Device Dissipation FR-5 Board(1) TA=25C Thermal Resistance, Junctionto Ambient(1) Junction Temperature Range Storage Temperature Range
mA
mW C/W C C
Device Marking
BC856AW=3A; BC856BW=3B; BC857AW=3E;BC857BW=3F; BC858AW=3J; BC858BW;=3K; BC858CW=3L
1. FR-5 = 1.0 x 0.75 x 0.062 in.
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Symbol Min Typ Max Unit
Electrical Characteristics(TA=25C Unless Otherwise noted)
Characteristics
Off Characteristics
Collector-Emitter Breakdown Voltage IC=-10mA Collector-Emitter Breakdown Voltage IC=-10uA, VEB=0 Collector-Base Breakdown Voltage IC=-10A Emitter-Base Breakdown Voltage IE=-1.0A Collector Cutoff Current VCB=-30V VCB=-30V, TA=150C BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series BC856 Series BC857 Series BC858 Series V(BR)CEO -65 -45 -30 -80 -50 -30 -80 -50 -30 -5.0 -5.0 -5.0 -15 -4.0 V
V(BR)CES
V V
V(BR)CBO
V(BR)EBO
V
ICBO
nA A
On Characteristics
DC Current Gain IC=-10A, VCE=-5.0V IC=-2.0mA,VCE=-5.0V) BC856A,BC857A,BC858A BC856B,BC857B,BC858B BC858C BC856A,BC857A,BC858A BC856B,BC857B,BC858B BC858C 125 220 420 -0.6 90 150 270 180 290 520 -0.7 -0.9 250 450 800 -0.3 -0.65 -0.75 -0.82
hFE
-
Collector-Emitter Saturation Voltage IC=-10mA, IB=-0.5mA IC=-100mA,IB=-5.0mA Base-Emitter Saturation Voltage IC=-10mA, IB=-0.5mA IC=-100mA IB=-5.0mA Base-Emitter On Voltage IC=-2.0mA, VCE=-5.0V IC=-10mA, VCE=-5.0V
VCE(sat)
V
VBE(sat)
V
VBE(on)
V
Small-signal Characteristics
Current-Gain-Band width Product IC=-10mA, VCE=-5.0V, f=100MHz Output Capacitance VCB=-10V,f=1.0MHz Noise Figure IC=-0.2mA, VCE=-5.0V, Rs=2.0k, f=1.0kHz, BW=200Hz fT Cob NF 100 4.5 10 MHz pF dB
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BC857 / BC858
2.0 -1.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
V, VOLTAGE (VOLTS)
VCE= -10 V T A = 25C
-0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1
T A = 25C
V BE(sat) @ I C /I B=10
1.0 0.7
V BE(on) @ V CE = -10 V
0.5
0.3
V CE(sat) @ I C /I B = 10
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
0
I C , COLLECTOR CURRENT (mAdc) Figure 1. Normalized DC Current Gain
VB , TEMPERATURE COEFFICIENT (mV/ C)
Figure 2. "Saturation" and "On" Voltages
I C , COLLECTOR CURRENT (mAdc)
VCE, COLLECTOR- EMITTER VOLTAGE (V)
-2.0
1.0
T A = 25C
-1.6
-55C to +125C
1.2
1.6
-1.2
2.0
-0.8
IC=
I C= -50 mA I C= -20 mA
-10 mA
I C= -200 mA I C= -100 mA
2.4
-0.4
2.8
0 -0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100
Figure 3. Collector Saturation Region
400
I B , BASE CURRENT (mA)
Figure 4. Base-Emitter Temperature Coefficient
I C , COLLECTOR CURRENT (mA)
10.0
C ib T A=25C
fT, CURRENT- GAIN - BANDWIDTH PRODUCT (MHz)
7.0
300
C, CAPACITANCE(pF)
200 150 100 80
5.0
3.0
C ob
V CE = -10V T A = 25C
2.0
60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
V R , REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 6. Current-Gain - Bandwidth Product
I C , COLLECTOR CURRENT (mAdc)
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BC856
hFE , DC CURRENT GAIN (NORMALIZED)
-1.0 V CE = -5.0V T A = 25C 2.0 1.0 0.5 0.2 -0.1-0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100-200 I C , COLLECTOR CURRENT (mA) T J= 25C
V, VOLTAGE (VOLTS)
-0.8 -0.6 -0.4 -0.2 0 -0.2
VBE(sat) @ I C/I B=10 VBE @VCE= -5.0 V
VCE(sat) @ I C /I B= 10 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. "On" Voltage
V CE , COLLECTOR- EMITTER VOLTAGE (VOLTS)
-1.6
IC = -20mA -50mA -100mA -200mA
VB , TEMPERATURE COEFFICIENT (mV/C)
-2.0
-1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2
-1.2 -0.8 -0.4
-10mA
VB for V BE
-55C to 125C
TJ= 25C 0 -0.02 -0.05 -0.1 -0.2
-0.5 -1.0 -2.0
-5.0
-10 -20
-0.5 -1.0 -2.0
-5.0
-10 -20
-50 -100 -200
Figure 9. Collector Saturation Region
fT, CURRENT- GAIN - BANDWIDTH PRODUCT T
I B , BASE CURRENT (mA)
Figure 10. Base-Emitter Temperature Coefficient
I C , COLLECTOR CURRENT (mA)
40
C, CAPACITANCE (pF)
20
T J= 25C C ib
500
VCE= -5.0V
200 100 50 20 -1.0 -10 -100
10 6.0 4.0 2.0 -0.1 -0.2 -0.5 C ob
-1.0 -2.0
-5.0
-10 -20
-50 -100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current-Gain - Bandwidth Product
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1.0
r( t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1
D=0.5 0.2 0.05
SINGLE PULSE
0.1
SINGLE PULSE
P(pk) t1 t2 DUTY CYCLE, D = t 1 /t 2
Z JC (t) = r(t) R JC R JC = 83.3C/W MAX Z JA (t) = r(t) R JA R JA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) R JC (t)
0.2
0.5
1.0
2.0
5.0
10
20 t, TIME (ms)
50
100
200
500
1.0k 2.0k
5.0k
10k
Figure 13. Thermal Response
-200
I C , COLLECTOR CURRENT (mA)
-100 -50 TA= 25C
1s TJ= 25C
3 ms
-10 -5.0 -2.0 -1.0
BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon T J(pk) = 150C; T C or T A is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided T J(pk) < 150C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown.
The safe operating area curves indicate I C -V CE limits of the
-0.5
-10
-30 -45 -65 -100
V CE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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SOT-323 Outline Demensions
Unit:mm
A
TOP VIEW D E G H
B
C
K L
J
M
Dim A B C D E G H J K L M
SOT-323
Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10
Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25
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