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| LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode 1 ANODE 3 CAHODE/ANODE 2 CATHODE BAV99LT1 3 1 2 DEVICE MARKING CASE 318-08, STYLE 11 BAV99LT1 = A7 SOT-23 (TO-236AB) MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Peak Forward Surge Current Repetitive Peak Reverse Voltage Average Rectified Forward Current (1) (averaged over any 20 ms period) Repetitive Peak Forward Current Non-Repetitive Peak Forward Current t = 1.0 s t = 1.0 ms t = 1.0 S Symbol VR IF I FM(surge) V RRM I F(AV) I FRM I FSM Value 70 215 500 70 715 450 2.0 1.0 0.5 Symbol PD Max 225 1.8 R JA PD 556 300 2.4 R JA T J , T stg 417 -65 to +150 Unit mW mW/C C/W mW mW/C C/W C Unit Vdc mAdc mAdc V mA mA A THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board, (1) T A = 25C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25C Derate above 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (EACH DIODE) Characteristic Symbol V (BR) IR Min 70 -- -- -- -- -- -- -- -- -- -- Max -- 2.5 30 50 1.5 715 855 1000 1250 6.0 1.75 Unit Vdc Adc OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100 A) Reverse Voltage Leakage Current (V R = 70 Vdc) (V R = 25 Vdc, T J = 150C) (V R = 70 Vdc, T J = 150C) Diode Capacitance (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mAdc) (I F = 50 mAdc) (I F = 150 mAdc) Reverse Recovery Time (I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100 ) (Figure 1) Forward Recovery Voltage (I F = 10 mA, t r = 20 ns) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. CD V F pF mVdc t rr V FR ns V G7-1/2 LESHAN RADIO COMPANY, LTD. BAV99LT1 +10 V 820 2.0 k 0.1F tr t t IF t rr t p 100 H IF 10% 0.1 F 50 OUTPUT PULSE GENERATOR D.U.T. 50 INPUT SAMPLING OSCILLOSCOPE 90% i R(REC) = 1.0 mA INPUT SIGNAL VR IR OUTPUT PULSE (I F = I R = 10 mA; MEASURED at i R(REC) = 1.0 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I F ) of 10mA. Notes: 2. Input pulse is adjusted so I R(peak) is equal to 10mA. Notes: 3. t p t rr Figure 1. Recovery Time Equivalent Test Circuit CURVES APPLICABLE TO EACH DIODE 100 10 I F , FORWARD CURRENT (mA) T A = 85C 10 I R , REVERSE CURRENT (A) T A = 150C 1.0 T A = 125C T A = - 40C 0.1 T A = 85C T A = 55C 1.0 T A = 25C 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0 10 T A = 25C 20 30 40 50 V F , FORWARD VOLTAGE (VOLTS) V R , REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D ,TOTAL CAPACITANCE (pF) 0.64 0.60 0.56 0.52 0 2 4 6 8 V R , REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance G7-2/2 |
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