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LESHAN RADIO COMPANY, LTD.
Band-switching diode
FEATURES * Small plastic SMD package * Continuous reverse voltage: max. 35 V * Continuous forward current: max. 100 mA * Low diode capacitance: max. 1.2 pF * Low diode forward resistance: max. 0.7 . APPLICATIONS * Low loss band switching in VHF television tuners. * Surface mount band-switching circuits. DESCRIPTION Planar high performance band-switching diode in a small plastic SOD523 (SC-79) SMD package.
BA 277
1
2
SOD523 SC-79
1 CATHODE
2 ANODE
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR IF P tot T stg Tj PARAMETER continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature CONDITIONS MIN. - - - -65 -65 MAX. 35 100 715 +150 +150 UNIT V mA mW C C
Ts =90C
ELECTRICAL CHARACTERISTICS T j = 25C unless otherwise specified. SYMBOL VF IR Cd Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering-point VALUE 85 UNIT K/W PARAMETER forward voltage reverse current diode capacitance CONDITIONS I F =10 mA V R = 25 V V R = 20 V; T amb =75C f = 1 MHz; V R = 6 V; note 1; see Fig.1 MAX. 1 50 1 1.2 0.7 UNIT V nA A pF
r D diode forward resistance I F = 2 mA; f = 100 MHz; note 1; see Fig.2
S19-1/2
LESHAN RADIO COMPANY, LTD.
BA 277
10
2.5
2.0
C d (pF)
1.5 1
r D( )
f = 1 MHz; T j =25C 10 -1 1 10 10 2
1.0
0.5
f = 100 MHz; T j =25C 0 10 -1 1 10
V
R
(V)
I F (mA )
Fig.1 Diode capacitance as a function of reverse voltage; typical values.
Fig.2 Diode forward resistance as a function of forward current; typical values.
S19-2/2

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