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| 2N5400 / 2N5401 2N5400 / 2N5401 PNP Version 2006-06-17 Power dissipation Verlustleistung CBE General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren fur universellen Einsatz PNP 625 mW TO-92 (10D3) 0.18 g 16 Plastic case Kunststoffgehause 18 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack 2 x 2.54 Dimensions - Mae [mm] Maximum ratings (TA = 25C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open - VCE0 - VCBO - VEBO Ptot - IC - ICM - IB Tj TS 9 Grenzwerte (TA = 25C) 2N5400 120 V 130 V 5V 625 mW 1) 600 mA 1A 100 mA -55...+150C -55...+150C 2N5401 150 V 160 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 2) - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - IC = 1 mA, - IC = 10 mA, - IC = 50 mA, - VCE = 5 V - VCE = 5 V - VCE = 5 V - VCE = 5 V - VCE = 5 V - VCE = 5 V 2N5400 hFE hFE hFE hFE hFE hFE - ICBO - ICBO - ICBO - ICBO 30 40 40 50 60 50 - - - - Kennwerte (Tj = 25C) Typ. - - - - - - - - - - Max. - 180 - - 240 - 100 nA 50 nA 100 A 50 A 2N5401 Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 100 V, (E open) - VCB = 120 V, (E open) - VCB = 100 V, Tj = 100C, (E open) - VCB = 120 V, Tj = 100C, (E open) 2N5400 2N5401 2N5400 2N5401 1 2 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 2N5400 / 2N5401 Characteristics (Tj = 25C) Min. Emitter-Base-cutoff current - Emitter-Basis-Reststrom - VEB = 3 V, (C open) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 50 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 200 A, RS = 10 , f = 1 kHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 2N5400 2N5401 F F RthA - - - - < 200 K/W 1) 2N5550 / 2N5551 - 8 dB CCBO - - 6 pF fT 100 MHz - 400 MHz - VBEsat - VBEsat - - - - 1.0 V 1.0 V - IEBO - VCEsat - VCEsat - - - -- - 50 nA 0.2 V 0.5 V Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) Kennwerte (Tj = 25C) Typ. Max. 120 [%] 100 80 60 40 20 Ptot 0 0 TA 50 100 150 [C] Power dissipation versus ambient temperature 1) Verlustleistung in Abh. von d. Umgebungstemp.1) 2 1 Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig wenn die Anschlussdrahte in 2 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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