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| NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT VCEO 15 V Collector -Emitter Voltage VCES 40 V Collector -Emitter Voltage VCBO 40 V Collector -Base Voltage VEBO 4.5 V Emitter -Base Voltage IC 200 mA Collector Current Continuous 500 mA Collector Current Peak(10us pulse) IC(peak) PD 360 mW Power Dissipation@ Ta=25 degC 2.06 mW/deg C Derate Above 25 deg C PD 1.2 W @Tc=25 deg C PD 0.68 W @Tc=100 deg C 6.85 mW/deg C Derate Above100 deg C Tj, Tstg -65 to +200 deg C Operating And Storage Junction Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 Collector -Emitter Voltage VCES IC=10uA, VBE=0 >40 >40 V Collector -Emitter Voltage VCBO IC=10uA, IE=0 >40 >40 V Collector -Base Voltage VEBO IE=10uA, IC=0 >4.5 >4.5 V Emitter -Base Voltage ICBO VCB=20V, IE=0 <400 nA Collector-Cut off Current VCB=20V, IE=0, Ta=150 deg C <30 uA ICES VCE=20V, VBE=0 <400 nA IB VCE=20V, VBE=0 <400 nA Base Current <0.25 <0.20 V Collector Emitter Saturation Voltage VCE(Sat)* IC=10mA,IB=1mA IC=30mA,IB=3mA <0.25 V IC=100mA,IB=10mA <0.50 V IC=10mA,IB=1mA,Ta= +125 deg C <0.30 V VBE(Sat) * IC=10mA,IB=1mA 0.7-0.85 0.7-0.85 V Base Emitter Saturation Voltage IC=30mA,IB=3mA <1.15 V IC=100mA,IB=10mA <1.60 V IC=10mA,IB=1mA,Ta= +125 deg C >0.59 V IC=10mA,IB=1mA, Ta= -55 deg C <1.02 V hFE* IC=10mA, VCE=1V 40-120 40-120 DC Current IC=10mA,VCE=1V, Ta= -55 deg C >20 IC=10mA,VCE=0.35V, Ta= -55 deg C >20 http://www.bocasemi.com page : 1 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION hFE* IC=10mA,VCE=0.35V DC Current IC=30mA,VCE=0.4V IC=100mA,VCE=1V IC=100mA,VCE=2V Small Signal Characteristics ft VCE=10V,IC=10mA, f=100MHz Transition Frequency Cobo VCB=5V, IE=0, f=140kHz Output Capacitance Turn on Time Turn off Time ton toff IC=10mA, IB1=3mA, IB= -1.5mA, VCC=3V IC=10mA, IB1=3mA, IB2= -1.5mA, VCC=3V 2N2369 >20 >500 <4.0 <12 - 2N2369/2369A 2N2369A UNIT 40-120 >30 >20 >500 <4.0 <12 <15 MHZ pF ns ns Storage Time ts IC=100mA, IB1=IB=10mA, VCC=10V <13 <13 ns *Pulse Test : Pulse Width =300us, Duty Cycle=2% TO-18 Metal Can Package A B DIM A B C D E F G H J K L MIN MA X 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 -- 0.76 -- 1.27 -- 2.97 0.91 1.17 0.71 1.21 12.70 -- 45 DE G C G 2 K 1 H L J D 3 F 3 2 1 PIN CONFIGURATION 1. EMITTER 2. BASE 3. COLLECTOR http://www.bocasemi.com page : 2 All diminsions in mm. E |
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