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| 1N5059...1N5062 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope Applications Rectifier, general purpose 94 9539 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Test Conditions Type 1N5059 1N5060 1N5061 1N5062 Symbol VR =VRRM Value 200 400 600 800 50 2 0.8 -55...+175 20 Unit V V V V A A A C mJ Peak forward surge current Average forward current g Junction and storage temperature range Max. pulse energy in avalanche mode, non repetitive (inductive load switch off) tp=10ms, half-sinewave RthJA=45K/W, Tamb=50C RthJA=100K/W, Tamb=75C IFSM IFAV IFAV Tj=Tstg ER I(BR)R=1A, indicutive load Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions lead length l = 10mm, TL = constant on PC board with spacing 25 mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Document Number 86000 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (4) 1N5059...1N5062 Vishay Telefunken Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Test Conditions IF=1A IF=2.5A VR=VRRM VR=VRRM, Tj=100C VR=VRRM, Tj=150C IR=100mA m Type Symbol VF VF IR IR IR V(BR)R V(BR)R V(BR)R V(BR)R trr CD Min Typ Max 1 1.15 1 10 100 1600 1600 1600 1600 4 Unit V V mA mA mA V V V V Reverse breakdown voltage g 1N5059 1N5060 1N5061 1N5062 225 450 650 900 50 Reverse recovery time Diode capacitance IF=0.5A, IR=1A, iR=0.25A VR=0V, f=1MHz ms pF Characteristics (Tj = 25_C unless otherwise specified) 200 PR - Reverse Power Dissipation ( mW ) VR = VRRM I R - Reverse Current ( mA ) 160 120 80 40 0 25 15764 1000.0 VR = VRRM 100.0 RthJA= 45K/W 100K/W 160K/W 1N5060 1N5059 1N5062 1N5061 10.0 1.0 0.1 50 75 100 125 150 175 15765 25 50 75 100 125 150 175 Tj - Junction Temperature ( C ) Tj - Junction Temperature ( C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 2. Max. Reverse Current vs. Junction Temperature www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86000 Rev. 2, 24-Jun-98 1N5059...1N5062 Vishay Telefunken 3.0 I FAV- Average Forward Current ( A ) CD - Diode Capacitance ( pF ) 2.5 2.0 1.5 1.0 0.5 0 0 15763 50 VR = VR RM half sinewave RthJA=45K/W l=10mm f=1MHz 40 30 20 10 0 0.1 15766 RthJA=100K/W PCB: d=25mm 20 40 60 80 100 120 140 160 180 1.0 10.0 100.0 Tamb - Ambient Temperature ( C ) VR - Reverse Voltage ( V ) Figure 3. Max. Average Forward Current vs. Ambient Temperature 100 10 1 0.1 0.01 Tj = 175C Tj = 25C Figure 5. Typ. Diode Capacitance vs. Reverse Voltage IF - Forward Current ( A ) 0.001 0 15762 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 VF - Forward Voltage ( V ) Figure 4. Max. Forward Current vs. Forward Voltage Dimensions in mm 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g Cathode Identification technical drawings according to DIN specifications 94 9538 0.82 max. 26 min. 4.2 max. 26 min. Polarity: Cathode indicated by a band Document Number 86000 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (4) 1N5059...1N5062 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86000 Rev. 2, 24-Jun-98 |
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