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| PD - 94911 Features INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRG4PC40FDPBF Fast CoPack IGBT C Benefits Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. VCES = 600V G E VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A n-channel TO-247AC Absolute Maximum Ratings Max. 600 49 27 200 200 15 200 20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.24 ----6 (0.21) Max. 0.77 1.7 -----40 ------ Units C/W g (oz) www.irf.com 1 12/29/03 IRG4PC40FDPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown Voltage 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance 9.2 ICES Zero Gate Voltage Collector Current ------V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.70 ---- V/C 1.50 1.7 1.85 ---V 1.56 ------- 6.0 -12 ---- mV/C 12 ---S ---- 250 A ---- 3500 1.3 1.7 V 1.2 1.6 ---- 100 n A Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 27A VGE = 15V IC = 49A See Fig. 2, 5 IC = 27A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 27A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 15A See Fig. 13 IC = 15A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 100 15 35 63 32 230 170 0.95 2.01 2.96 63 33 350 310 4.7 13 2200 140 29 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 150 IC = 27A 23 nC VCC = 400V See Fig. 8 53 VGE = 15V ---TJ = 25C ---ns IC = 27A, VCC = 480V 350 VGE = 15V, RG = 10 250 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 4.0 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 10 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 15A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 VR = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17 2 www.irf.com IRG4PC40FDPBF 40 30 Load Current (A) Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 35W 60% of rated voltage 20 10 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 1000 (A) IC , Collector-to-Emitter Current 100 TJ = 25C TJ = 150C IC , Collector-to-Emitter Current (A) 100 TJ = 150C 10 10 TJ = 25C 1 1 VGE = 15V 20s PULSE WIDTH A 10 1 5 6 7 8 V CC = 50V 5s PULSE WIDTH A 9 10 11 12 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40FDPBF 50 V GE = 15V 2.5 VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) VGE = 15V 80s PULSE WIDTH 40 I C = 54A 2.0 30 20 I C = 27A 1.5 10 I C = 14A 1.0 -60 -40 -20 0 20 40 60 80 0 25 50 75 100 125 150 A 100 120 140 160 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t 1 t2 Notes: 1. Duty factor D = t / t 12 2. Peak TJ = PDM x Z thJC + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40FDPBF 4000 VGE = 0V f = 1 MHz SHORTED 20 Coes = Cce + Cgc 3000 VGE , Gate-to-Emitter Voltage (V) Cies = Cge + Cgc + Cce Cres = Cce VCE = 400V IC = 27A C , Capacitance ( pF) 16 Cies 2000 12 8 1000 Coes Cres 4 0 1 10 A 100 0 0 20 40 60 80 100 A 120 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.3 Total Switchig Losses (mJ) Total Switchig Losses (mJ) VCC VGE TJ IC = 480V = 15V = 25C = 27A 100 RG = 10 VGE = 15V VCC = 480V 3.2 10 I C = 54A I C = 27A I C = 14A 3.1 1 3.0 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G, Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40FDPBF 12 10 I C , Collector-to-Emitter Current (A) Total Switchig Losses (mJ) RG TJ VCC VGE = 10 = 150C = 480V = 15V 1000 VGE = 20V GE TJ = 125C 8 100 SAFE OPERATING AREA 6 4 10 2 0 0 10 20 30 40 50 A 60 1 1 10 100 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instantaneous Forward Current - I F (A) 10 TJ = 150C TJ = 125C TJ = 25C 1 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC40FDPBF 100 100 VR= 200V T J = 125C T J = 25C 80 VR = 200V TJ = 125C TJ = 25C I F = 30A I F = 30A 60 I IRRM - (A) t rr - (ns) 10 IF = 15A I F = 15A 40 I F = 5.0A I F = 5.0A 20 100 di f /dt - (A/s) 1000 1 100 di f /dt - (A/s) 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 800 Fig. 15 - Typical Recovery Current vs. dif/dt 1000 VR = 200V TJ = 125C TJ = 25C 600 VR = 200V TJ = 125C TJ = 25C IF = 30A di(rec)M/dt - (A/s) Q RR - (nC) 400 I F = 5.0A I F = 15A I F = 30A I F = 15A IF = 5.0A 200 0 100 di f /dt - (A/s) 1000 100 100 di f /dt - (A/s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC40FDPBF 90% Vge +Vge Same type device as D.U.T. Vce Ic 10% Vce 90% Ic Ic 5% Ic 80% of Vce 430F D.U.T. td(off) tf Eoff = t1+5S Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg +Vg Ic trr Qrr = trr id dt tx tx 10% Vcc Vce Vcc 10% Ic 90% Ic DUT VOLTAGE AND CURRENT Ipk 10% Irr Vcc Vpk Irr Ic DIODE RECOVERY WAVEFORMS td(on) tr 5% Vce t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 t4 Erec = Vd id dt t3 t1 t4 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4PC40FDPBF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000F 100V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4PC40FDPBF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10H, RG = 10 (figure 19) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. TO-247AC Package Outline 15.90 (.626) 15.30 (.602) -B3.65 (.143) 3.55 (.140) -A- Dimensions are shown in millimeters (inches) -D5.30 (.209) 4.70 (.185) 0.25 (.010) M D B M 5.50 (.217) 2.50 (.089) 1.50 (.059) 4 20.30 (.800) 19.70 (.775) 1 2 3 2X 5.50 (.217) 4.50 (.177) NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-AC. -C14.80 (.583) 14.20 (.559) 4.30 (.170) 3.70 (.145) 2.40 (.094) 2.00 (.079) 2X 5.45 (.215) 2X 1.40 (.056) 3X 1.00 (.039) 0.25 (.010) M 3.40 (.133) 3.00 (.118) C AS 0.80 (.031) 3X 0.40 (.016) 2.60 (.102) 2.20 (.087) LEAD ASSIGNMENTS Hexfet IGBT 1 -LEAD ASSIGNMENTS Gate 1 - Gate 1 - GATE2 - Collector 2 - Drain 2 - DRAIN 3 - Source 3 - Emitter 3 - SOURCE 4 - Drain DRAIN - Collector 4 4- TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
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