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| PNP SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 MARCH 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt FXT557 B C E REFER TO ZTX557 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -300 -300 -5 -1 -0.5 1 -55 to +200 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-on Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. -300 -300 -5 -0.1 -0.1 -0.3 -1 -1 50 50 75 10 3-41 TYP. MAX. UNIT V V V A A CONDITIONS. IC=-100A, IE=0 IC=-10mA, IB=0* IE=-100A, IC=0 VCB=-200V, IE=0 VEB=-4V, IC=0 IC=-50mA, IB=-5mA* IC=-50mA, IB=-5mA* IC=-50mA, VCE=-10V* IC=-10mA, VCE=-10V* IC=-50mA, VCE=-10V* Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance fT Cobo 300 MHz pF IC=-50mA, VCE=-10V f=100MHz VCE=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% |
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