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| FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET September 2006 FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET 30V, 80A, 2.1m Features Typ rDS(on) = 1.5m at VGS = 5V, ID = 80A Typ Qg(5) = 100nC at VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse and Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant AD FREE I Applications 12V Automotive Load Control Starter / Alternator Systems Electronic Power Steering Systems ABS DC-DC Converters M ENTATIO LE N MP (c)2006 Fairchild Semiconductor Corporation FDB8832 Rev. A LE 1 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (TC < 165oC, VGS = 10V) Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RJA = 43oC/W) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 1) Drain Current Continuous (TC < 163oC, VGS = 5V) Parameter Ratings 30 20 80 80 34 See Figure 4 1246 300 2 -55 to +175 mJ W W/oC o Units V V A TJ, TSTG Operating and Storage Temperature C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient, lin2 copper pad area (Note 2) 0.5 62 43 o C/W oC/W oC/W Package Marking and Ordering Information Device Marking FDB8832 Device FDB8832 Package TO-263AB Reel Size 330mm Tape Width 24mm Quantity 800 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Test Conditions ID = 250A, VGS = 0V VDS = 24V VGS = 0V VGS = 20V VDS = VGS, ID = 250A ID = 80A, VGS = 10V ID = 80A, VGS = 5V rDS(on) Drain to Source On Resistance ID = 80A, VGS = 4.5V ID = 80A, VGS = 10V TJ = 175C TJ = 150C Min 30 Typ Max 1 250 100 Units V A nA Off Characteristics BVDSS IDSS IGSS VGS(th) On Characteristics Gate to Source Threshold Voltage 1.0 1.6 1.4 1.5 1.6 2.3 3.0 1.9 2.1 2.2 3.0 m V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(5) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 10V Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 15V, VGS = 0V, f = 1MHz VGS = 0.5V, f = 1MHz VGS = 0 to 10V VGS = 0 to 5V VGS = 0 to 1V VDD = 15V ID = 80A Ig = 1.0mA 11400 2140 1260 1.2 204 100 10.9 33 22 43 265 130 14.2 pF pF pF nC nC nC nC nC nC FDB8832 Rev. A 2 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics t(on) td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 15V, ID = 80A VGS = 5V, RGS = 1.5 24 73 54 38 155 149 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 75A ISD = 40A IF = 75A, di/dt = 100A/s IF = 75A, di/dt = 100A/s 0.8 0.8 59 67 1.25 1.0 77 87 V V ns nC Notes: 1: Starting TJ = 25oC, L = 0.61mH, IAS = 64A, VDD = 30V, VGS = 10V. 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDB8832 Rev. A 3 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 350 300 250 VGS = 10V CURRENT LIMITED BY PACKAGE 1.0 0.8 0.6 0.4 0.2 0.0 200 150 100 50 VGS = 5V 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 SINGLE PULSE 1E-3 -5 10 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 10000 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 VGS = 10V IDM, PEAK CURRENT (A) TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 1000 I = I25 175 - TC 150 100 SINGLE PULSE 10 -5 10 10 -4 10 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 -1 10 0 10 1 Figure 4. Peak Current Capability FDB8832 Rev. A 4 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics 4000 ID, DRAIN CURRENT (A) 500 10us 100us 1000 IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 100 STARTING TJ = 25 C o 10 LIMITED BY PACKAGE 10 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC STARTING TJ = 150 C o 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 1 0.01 0.1 1 10 100 tAV, TIME IN AVALANCHE (ms) 1000 5000 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 5. Forward Bias Safe Operating Area Figure 6. Unclamped Inductive Switching Capability 200 ID, DRAIN CURRENT (A) 200 ID, DRAIN CURRENT (A) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VDD = 5V TJ = 175oC 150 150 VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 5V VGS = 3.5V VGS = 3V 100 TJ = 25oC TJ = -55oC 100 50 50 0 0 1 2 3 4 0 0.0 VGS, GATE TO SOURCE VOLTAGE (V) 0.5 1.0 VDS, DRAIN TO SOURCE VOLTAGE (V) 1.5 Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 1.6 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX 3 1.4 1.2 1.0 0.8 0.6 -80 TJ = 175oC 2 TJ = 25oC 1 ID = 80A VGS = 10V 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDB8832 Rev. A 5 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET Typical Characteristics NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.4 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = VDS ID = 250A 1.10 ID = 250A 1.0 0.8 0.6 0.4 0.2 0.0 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 1.05 1.00 0.95 0.90 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE (oC) Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 40000 Ciss Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10 ID = 80A CAPACITANCE (pF) 10000 Coss 8 VDD = 12V 6 4 2 0 VDD = 15V VDD = 18V 1000 Crss f = 1MHz VGS = 0V 100 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 0 50 100 150 200 Qg, GATE CHARGE(nC) 250 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDB8832 Rev. A 6 www.fairchildsemi.com FDB8832 N-Channel Logic Level PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 Preliminary No Identification Needed Full Production Obsolete Not In Production FDB8832 Rev. A 7 www.fairchildsemi.com |
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