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| 4N25X, 4N26X, 4N27X, 4N28X 4N25, 4N26, 4N27, 4N28 OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802 l Certified to EN60950 by the following Test Bodies :Nemko - Certificate No. P01102464 Fimko - Certificate No. FI18166 Semko - Reference No. 0202037/01-22 Demko - Certificate No. 311158-01 l BSI approved - Cetificate No. 8001 DESCRIPTION The 4N25, 4N26, 4N27, 4N28 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available APPLICATIONS l DC motor controllers l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l 2.54 7.0 6.0 1.2 7.62 6.62 Dimensions in mm 1 2 3 6 5 4 7.62 4.0 3.0 0.5 13 Max 0.26 3.0 0.5 3.35 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 30V 70V 6V 160mW 60mA 6V 105mW OPTION SM SURFACE MOUNT OPTION G 7.62 0.6 0.1 10.46 9.86 1.25 0.75 0.26 10.16 Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 5/2/03 DB91028m-AAS/A4 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) ( Note 2 ) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Collector-base Dark Current (ICBO) Current Transfer Ratio (CTR) 4N25, 4N26 4N27, 4N28 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Turn-on Time Turn-off Time Output Rise Time Output Fall Time ton toff tr tf 30 70 6 50 20 MIN TYP MAX UNITS 1.2 1.5 10 V A TEST CONDITION IF = 10mA VR = 6V IC = 1mA IC = 100A IE = 100A VCE = 10V VCE = 10V 10mA IF , 10V VCE 10mA IF , 10V VCE 50mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC = 10V , IF= 10mA, RL = 100 ( FIG 1) V V V nA nA Coupled 20 10 0.5 5300 7500 5x1010 4 3 2 2 % % V VRMS VPK s s s s Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. VCC Input RL = 100 Output Output 10% tr tf ton toff 10% 90% 90% FIG 1 5/2/03 DB91028m-AAS/A4 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Relative current transfer ratio 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 -30 0 25 50 75 100 125 1 Relative Current Transfer Ratio vs. Forward Current 150 100 50 VCE = 0.5V TA = 25C 2 5 10 20 50 0 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 80 70 Relative current transfer ratio Forward current IF (mA) 60 50 40 30 20 10 -30 0 25 50 75 100 125 Forward current IF (mA) Relative Current Transfer Ratio vs. Forward Current 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 2 5 10 20 50 VCE = 10V TA = 25C Ambient temperature TA ( C ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 Forward current IF (mA) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB91028m-AAS/A4 Collector-emitter saturation voltage VCE(SAT) (V) Relative current transfer ratio IF = 10mA VCE = 10V IF = 50mA IC = 2mA 1.0 0.5 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) 5/2/03 |
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