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| 2SB1672 Transistors Power Transistor (-80V, -7A) 2SB1672 !Features 1) Low saturation voltage. (Typ. VCE(sat) = -0.3V at IC / IB =-4A / -0.4A) 2) Excellent DC current gain characteristics. 3) Pc = 30W (Tc = 25C). 4) Wide SOA (safe operating area). 5) Complements the 2SD2611. !External dimensions (Units : mm) 10.0 4.5 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 2.54 2.54 (1) (2) (3) (1) (2) (3) 0.75 2.6 !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature * Single pulse, Pw=100ms ROHM : TO-220FN Unit V V V A(DC) A(Pulse) W W(Tc=25C) C C * (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -80 -80 -5 -7 -10 2 30 150 -55 +150 !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SB1672 TO-220FN EF - 500 !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE fT Cob Min. -80 -80 -5 - - - - 100 - - Typ. - - - - - - - - 12 200 Max. - - - -10 -10 -1 -1.5 320 - - Unit V V V A A V V - MHz pF IC = -50A IC = -1mA IE = -50A VCB = -80V VEB = -4V IC/IB = -4A/-0.4A IC/IB = -4A/-0.4A VCE/IC = -5V/-1A VCE = -5V , IE = 0.5A , f = 5MHz VCB = -10V , IE = 0A , f = 1MHz Conditions Transition frequency Output capacitance Measured using pulse current |
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