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| Composite Transistors XP4654 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm 0.425 1.250.1 0.425 0.20.05 For high speed switching 0.65 2.10.1 0.65 q q Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 2.00.1 s Features 1 2 3 6 5 4 0.90.1 q 2SC3757+2SA1738 0.70.1 0 to 0.1 0.20.1 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCES VEBO IC ICP VCBO VCES VEBO IC ICP PT Tj Tstg (Ta=25C) Ratings 40 40 5 100 300 -15 -15 -4 -50 -100 150 150 -55 to +150 Unit V V V mA mA V V V mA mA mW C C 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC-88 S-Mini Type Package (6-pin) Marking Symbol: ED Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 -0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors XP4654 (Ta=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg *1 s Electrical Characteristics q Tr1 Parameter Conditions VCB = 40V, IE = 0 VEB = 4V, IC = 0 VCE = 1V, IC = 10mA IC = 10mA, IB = 1mA IC = 10mA, IB = 1mA VCB = 10V, IE = -10mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 450 2 17 17 10 6 60 0.17 min typ max 0.1 0.1 320 0.25 1.0 V V MHz pF ns ns ns Unit A A Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time q Tr2 Parameter Symbol ICBO IEBO hFE1 hFE2 VCE(sat) fT Cob ton toff tstg *2 Conditions VCB = -8V, IE = 0 VEB = -3V, IC = 0 VCE = -1V, IC = -10mA VCE = -1V, IC = -1mA IC = -10mA, IB = -1mA VCB = -10V, IE = 10mA, f = 200MHz VCB = -5V, IE = 0, f = 1MHz min typ max - 0.1 - 0.1 Unit A A Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time *1 *2 50 30 - 0.1 800 1500 1 12 20 19 150 - 0.2 V MHz pF ns ns ns Refer to the test circuit (page 459) Refer to the test circuit (page 460) Common characteristics chart PT -- Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2 Composite Transistors Characteristics charts of Tr1 Switching time measuring circuit ton, toff Test Circuit 0.1F Vout 220 Vin=10V 3.3k 3.3k Vbb= -3V 50 XP4654 tstg Test Circuit 0.1F A 910 0.1F 500 Vin=10V 500 50 Vbb=2V VCC=10V 90 Vout 1k 50 VCC=3V Vin Vout 10% 90% Vin Vout 10% 90% 0 Vin 10% 10% tstg (Wave form at A) Vout toff ton IC -- VCE 120 100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 100 VBE(sat) -- IC IC/IB=10 100 30 10 3 1 Ta=75C 0.3 0.1 0.03 0.01 0.1 25C -25C Base to emitter saturation voltage VBE(sat) (V) 30 10 3 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 25C 75C Collector current IC (mA) IB=3.0mA 2.5mA 80 2.0mA 1.5mA 60 1.0mA 40 0.5mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 600 VCE=1V 600 fT -- I E 6 Cob -- VCB Collector output capacitance Cob (pF) VCB=10V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) 500 500 5 f=1MHz IE=0 Ta=25C 400 400 4 300 300 3 200 Ta=75C 25C -25C 200 2 100 100 1 0 0.1 0.3 1 3 10 30 100 0 -1 0 -3 -10 -30 -100 -300 -1000 1 3 10 30 100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 3 Composite Transistors Characteristics charts of Tr2 Switching time measuring circuit ton, toff Test Circuit VBB 2k 0.1F Vin 51 52 VCC=-1.5V 62 Vout Vin 51 0.1F XP4654 tstg Test Circuit VBB=-10V 508 34 VCC=-3V 30 Vout Vin Vout 0 10% 90% 90% 10% Vin Vout 0 90% 90% toff Vin=9.0V ton toff Vin=-5.8V Vin=9.8V VBB=Ground VBB=-8.0V IC -- VCE -60 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 -100 VBE(sat) -- IC IC/IB=10 Base to emitter saturation voltage VBE(sat) (V) -50 IB=-600A -500A -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 Collector current IC (mA) -10 Ta=75C 25C -25C -1 -40 -400A -300A -30 -200A -20 -100A -10 Ta=-25C 25C 75C -0.1 0 0 -2 -4 -6 -8 -10 -12 -0.01 -1 -10 -100 -1000 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) hFE -- IC 240 VCE=-10V 2400 fT -- I E Collector output capacitance Cob (pF) VCB=-10V f=200MHz Ta=25C 2.4 Cob -- VCB f=1MHz IE=0 Ta=25C Forward current transfer ratio hFE 200 Transition frequency fT (MHz) 2000 2.0 160 1600 1.6 120 Ta=75C 1200 1.2 80 25C 40 -25C 800 0.8 400 0.4 0 -0.1 0 -1 -10 -100 1 3 10 30 100 0 -1 -3 -10 -30 -100 Collector current IC (mA) Emitter current IE (mA) Collector to base voltage VCB (V) 4 |
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