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| NTD32N06 Power MOSFET 32 Amps, 60 Volts, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 26 mW N-Channel D ID MAX 32 A * * * * * * * * * * * * Pb-Free Packages are Available Smaller Package than MTB36N06V Lower RDS(on) Lower VDS(on) Lower Total Gate Charge Lower and Tighter VSD Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge Power Supplies Converters Power Motor Controls Bridge Circuits Typical Applications G S MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 MW) Gate-to-Source Voltage, Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (Note 3) (VDD = 50 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 25 A, VDS = 60 Vdc, RG = 25 W) Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "20 "30 32 22 90 93.75 0.625 2.88 1.5 -55 to +175 313 Unit Vdc Vdc Vdc 12 Adc Apk W W/C W W C mJ 1 RqJC RqJA RqJA TL 1.6 52 100 260 C/W 2 3 4 DPAK CASE 369C STYLE 2 MARKING DIAGRAMS 4 Drain AYWW 32N06 2 1 3 Drain Gate Source 4 Drain 4 AYWW 32N06 123 Gate Drain Source 32N06 A Y WW = Device Code = Assembly Location = Year = Work Week DPAK-3 CASE 369D STYLE 2 TJ, Tstg EAS 3 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, (Cu Area 0.412 in2). 3. Repetitive rating; pulse width limited by maximum junction temperature. (c) Semiconductor Components Industries, LLC, 2004 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. 1 August, 2004 - Rev. 3 Publication Order Number: NTD32N06/D NTD32N06 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 16 Adc) Static Drain-to-Source On-Voltage (Note 4) (VGS = 10 Vdc, ID = 20 Adc) (VGS = 10 Vdc, ID = 32 Adc) (VGS = 10 Vdc, ID = 16 Adc, TJ = 150C) Forward Transconductance (Note 4) (VDS = 6 Vdc, ID = 16 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 5) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 32 Adc, Vd Ad VGS = 10 Vdc) (Note 4) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 4) (IS = 32 Adc, VGS = 0 Vdc) (Note 4) (IS = 20 Adc, VGS = 0 Vdc, TJ = 150C) (IS = 32 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/ms) (Note 4) Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. VSD - - - - - - - 0.89 0.96 0.75 52 37 14.3 0.095 1.0 - - - - - - mC Vdc (VDD = 30 Vdc, ID = 32 Adc, VGS = 10 Vdc, Vdc RG = 9.1 W) (Note 4) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 10 84 31 93 33 6.0 15 25 180 70 200 60 - - nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vd Vd f = 1.0 MHz) Ciss Coss Crss - - - 1231 346 77 1725 485 160 pF VGS(th) 2.0 - RDS(on) - VDS(on) - - - gFS - 0.417 0.680 0.633 21.1 0.62 - - - mhos 21 26 Vdc 2.8 7.0 4.0 - Vdc mV/C mW V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 70 41.6 - - Vdc mV/C mAdc Symbol Min Typ Max Unit Reverse Recovery Time trr ta tb QRR ns http://onsemi.com 2 NTD32N06 60 VGS = 10 V ID, DRAIN CURRENT (AMPS) 50 VGS = 6.5 V 40 30 20 10 0 VGS = 4.5 V VGS = 4 V VGS = 7 V VGS = 8 V VGS = 5 V VGS = 5.5 V ID, DRAIN CURRENT (AMPS) VGS = 6 V 60 VDS > = 10 V 50 40 30 20 10 0 0 1 2 3 4 3 3.4 3.8 4.2 4.6 5 5.4 5.8 6.2 6.6 7 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C TJ = 100C TJ = -55C Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.038 VGS = 10 V 0.034 0.03 0.026 0.022 0.018 TJ = -55C 0.014 0.01 0 10 20 30 40 50 60 TJ = 25C TJ = 100C 0.024 0.023 0.022 VGS = 10 V 0.021 0.02 VGS = 15 V 0.019 0.018 0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 10 0 25 50 75 100 125 150 175 10000 ID = 16 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C TJ = 125C 100 TJ = 100C 0 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTD32N06 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3200 2800 C, CAPACITANCE (pF) 2400 2000 1600 1200 800 400 0 10 12 10 8 6 4 2 0 0 ID = 32 A TJ = 25C 4 8 12 16 20 24 28 32 36 QT VGS VDS = 0 V Ciss VGS = 0 V TJ = 25C Crss Ciss Q1 Q2 Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 32 A VGS = 10 V t, TIME (ns) 32 28 24 20 16 12 8 4 0 0.6 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 100 tr tf td(off) td(on) 10 1 10 RG, GATE RESISTANCE (W) 100 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 1000 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C 100 dc 10 10 ms 1 ms 100 ms Mounted on 3 sq. FR4 board (1 sq. 2 oz. Cu 0.06 thick single sided) with one die operating,10 s max 0.1 0.1 1 10 100 RDS(on) Limit Thermal Limit Package Limit 350 Figure 10. Diode Forward Voltage vs. Current ID = 32 A 300 250 200 150 100 50 0 25 50 75 100 125 150 175 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTD32N06 10 EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Normalized to RqJC at Steady State 1 0.1 r(t), 0.01 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 Figure 13. Thermal Response 10 EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) r(t), Normalized to RqJA at Steady State, 1 square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 14. Thermal Response http://onsemi.com 5 NTD32N06 ORDERING INFORMATION Device NTD32N06 NTD32N06G NTD32N06-1 NTD32N06-1G NTD32N06T4 NTD32N06T4G Package DPAK DPAK (Pb-Free) DPAK-3 DPAK-3 (Pb-Free) DPAK DPAK (Pb-Free) Shipping 75 Units/Rail 75 Units/Rail 75 Units/Rail 75 Units/Rail 2500 Tape & Reel 2500 Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD32N06 PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE C E DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 NTD32N06 PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- B V R 4 Z A 3 S -T- SEATING PLANE 1 2 K F D G 3 PL J H 0.13 (0.005) M DIM A B C D E F G H J K R S V Z T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTD32N06/D |
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