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APT11058JFLL
1100V 18A
0.580
S D
POWER MOS 7
(R)
R
FREDFET
G
S
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching (R) losses are addressed with Power MOS 7 by significantly lowering RDS(ON) (R) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Pulsed Drain Current
1
SO
2 T-
27
"UL Recognized"
ISOTOP (R)
* Increased Power Dissipation * Easier To Drive * Popular SOT-227 Package * FAST RECOVERY BODY DIODE
D G S
All Ratings: TC = 25C unless otherwise specified.
APT11058JFLL UNIT Volts Amps
1100 18 72 30 40 463 3.70 -55 to 150 300 18 50
4
Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current
1
Volts Watts W/C C Amps mJ
(Repetitive and Non-Repetitive)
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
2500
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS RDS(on) IDSS IGSS VGS(th) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) Drain-Source On-State Resistance
2
MIN
TYP
MAX
UNIT Volts
1100 0.580 250 1000 100 3 5
(VGS = 10V, ID = 9A)
Ohms A nA Volts
4-2004 050-7183 Rev A
Zero Gate Voltage Drain Current (VDS = 1100V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 880V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Symbol IS ISM VSD
dv/ dt
APT11058JFLL
Test Conditions
VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 550V ID = 18A @ 25C RESISTIVE SWITCHING VGS = 15V VDD = 550V ID = 18A @ 25C 6 INDUCTIVE SWITCHING @ 25C VDD = 733V, VGS = 15V INDUCTIVE SWITCHING @ 125C VDD = 733V VGS = 15V ID = 18A, RG = 5 ID = 18A, RG = 5 RG = 0.6
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
MIN
TYP
MAX
UNIT pF
4135 680 120 160 20 105 16 8 40 12 700 210 1450 270
MIN TYP MAX
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current Diode Forward Voltage Peak Diode Recovery
1 2 dt 6
nC
ns
J
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
UNIT Amps Volts V/ns ns C Amps
18 72 1.3 18
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C MIN
(Body Diode) (VGS = 0V, IS = -18A)
5
dv/
t rr Q rr IRRM
Reverse Recovery Time (IS = -18A, di/dt = 100A/s) Reverse Recovery Charge (IS = -18A, di/dt = 100A/s) Peak Recovery Current (IS = -18A,
di/ dt
300 600 1.7 4.47 11.4 16.4
TYP MAX
= 100A/s)
THERMAL CHARACTERISTICS
Symbol RJC RJA Characteristic Junction to Case Junction to Ambient UNIT C/W
0.27 40
1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471
4 Starting Tj = +25C, L = 15.43mH, RG = 25, Peak IL = 18A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID18A di/dt 700A/s VR VDSS TJ 150C 6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.30
, THERMAL IMPEDANCE (C/W)
0.25 0.20 0.15 0.10 0.05 0
0.9
0.7 0.5 Note:
PDM t1 t2
4-2004
0.3
JC
050-7183 Rev A
0.1 0.05 10-5 10-4
SINGLE PULSE
Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC
Z
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
RC MODEL
45 40 35 30 25 20 15 10 5 0 VGS =15,10 & 7.5V
APT11058JFLL
7V
Junction temp. (C)
0.0409
0.0246F
6.5V
Power (watts)
0.225
0.406F
6V
0.00361 Case temperature. (C)
148.0F
5.5V 5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
VDS> ID (ON) x RDS (ON)MAX. 250 SEC. PULSE TEST @ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
60
ID, DRAIN CURRENT (AMPERES)
0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 1.40
NORMALIZED TO V = 10V @ 9A
GS
50 40 30 20 10 0
1.30 1.20 1.10 1.00 0.90 0.80 VGS=20V
TJ = -55C TJ = +25C TJ = +125C
VGS=10V
0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS
0
18 16
ID, DRAIN CURRENT (AMPERES) BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED)
1.15
5 10 15 20 25 30 35 40 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
14 12 10 8 6 4 2 0 25
1.10
1.05
1.00
0.95
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED)
3
I
D
0.90 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50
4-2004 050-7183 Rev A
= 9A = 10V
2.0 1.5 1.0 0.5 0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
2.5
V
GS
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
72
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE LIMITED BY RDS (ON)
20,000 10,000
APT11058JFLL
Ciss
100S
C, CAPACITANCE (pF)
1,000 Coss
10 5
1mS TC =+25C TJ =+150C SINGLE PULSE
100
Crss
10mS 10
1
1 10 100 1100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I
D
0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 18A
200 100
12
VDS= 220V
TJ =+150C TJ =+25C 10
8
VDS= 550V
VDS= 880V 4
40 80 120 160 200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 120 100 td(off)
0 0
0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE 70 60 50 tf
V
DD G
1
td(on) and td(off) (ns)
80 60 40 20
V
DD G
= 733V
R
= 5
tr and tf (ns)
T = 125C
J
40 30 20 10
= 733V
L = 100H
R
= 5
T = 125C
J
L = 100H
tr
td(on) 0 0 15 20 25 30 35 ID (A) FIGURE 14, DELAY TIMES vs CURRENT
V
DD G
5
10
15 20 25 30 35 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT 2500
0
0
5
10
2500
= 733V
R
= 5
SWITCHING ENERGY (J)
2000
SWITCHING ENERGY (J)
T = 125C
J
L = 100H E ON includes diode reverse recovery.
2000 Eon 1500 Eoff 1000
V I
DD
1500 Eon 1000
= 733V
4-2004
D J
= 20A
500
050-7183 Rev A
Eoff
500
T = 125C L = 100H E ON includes
15 20 25 30 35 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10
10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
0
diode reverse recovery.
0
5
Typical Performance Curves
10% Gate Voltage T 125C J 90%
APT11058JFLL
Gate Voltage
td(on)
td(off)
Drain Voltage 90% 90% 10% Drain Current 5% Drain Voltage
TJ125C
tr
5% Switching Energy
tf
10% 0 Switching Energy Drain Current
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF120
V DD
IC
V CE
G D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.
Gate
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7183 Rev A
4-2004
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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