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| 2SK3913-01MR N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) TO-220F 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power Applications Switching regulators DC-DC converters UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Max. Power Dissipation Operating and Storage Temperature range Isolation Voltage Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt -di/dt PD Tch Tstg VISO Ratings 250 220 14 56 30 14 301.1 3.7 20 5 100 37 2.16 +150 Unit V V A A V A mJ mJ kV/s kV/s A/s W Remarks VGS=-30V Equivalent circuit schematic Drain(D) Note *1 Note *2 Note *3 VDS< 250V = Note *4 Note *5 Tc=25C Ta=25C Gate(G) Source(S) Note *1:Tch <150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=6A,L=14.1mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and avalanch current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. C See to the `Transient Theemal impedance' -55 to +150 C graph 2 kVrms t=60sec f=60Hz Note *4:IF< -ID, -di/dt=100A/s,VCC BVDSS,Tch<150C < = = = < -ID, dv/dt=5kV/s,VCC< BVDSS,Tch< 150C Note *5:IF= Electrical characteristics (Tc =25C unless otherwise specified) = = Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a) Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=250V VGS=0V VDS=200V VGS=0V VGS=30V VDS=0V ID=7A VGS=10V ID=7A VDS=25V VDS=75V VGS=0V f=1MH VCC=48V ID=7A VGS=10V RGS=10 VCC=125V ID=14A VGS=10V IF=14A VGS=0V Tch=25C IF=14A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient Tch=25C Tch=125C 220 10 780 90 6.0 12 3 23 6 22 7.0 6.0 1.00 120 0.5 Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Min. 250 3.0 Typ. Max. 5.0 25 2 100 280 1170 135 9.0 18 4.5 35 9 33 11 9.0 1.50 250 1.25 Units V V A mA nA m S pF 5 ns nC V ns C Thermalcharacteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Min. Typ. Max. 3.378 58 Units C/W C/W 1 2SK3913-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 40 35 Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C 35 30 20V 10V 30 25 8V 25 PD [W] 20 ID [A] 20 15 15 10 10 5 7V 6.5V 5 VGS=6V 0 0 25 50 75 100 125 150 0 0 2 4 6 8 10 12 14 16 Tc [C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C 100 Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C 10 10 ID[A] 1 gfs [S] 1 0 1 2 3 4 5 6 7 8 9 10 0.1 0.1 0.1 0.01 1 10 100 VGS[V] ID [A] 1.0 0.9 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C VGS=6.5V 7.0V 7.5V 0.8 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=7A,VGS=10V 0.7 0.8 0.6 8V 0.7 RDS(on) [ ] RDS(on) [ ] 0.6 0.5 0.4 0.3 0.5 10V 20V 0.4 max. 0.3 typ. 0.2 0.2 0.1 0.0 0 5 10 15 20 25 30 35 0.1 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [C] 2 2SK3913-01MR Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA FUJI POWER MOSFET 7 24 Typical Gate Charge Characteristics VGS=f(Qg):ID=14A,Tch=25C 6 20 Vcc= 50V 250V 200V 5 max. 16 VGS(th) [V] VGS [V] 4 12 3 min. 8 2 1 4 0 -50 -25 0 25 50 75 100 125 150 0 0 10 20 30 40 50 60 70 Tch [C] Qg [nC] 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 100 Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C 1n Ciss 10 C [F] 100p Coss IF [A] 1 Crss 0.1 0.00 10p 1p -1 10 10 0 10 1 10 2 10 3 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 350 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=14A 300 IAS=5.6A tf 10 2 250 EAV [mJ] td(off) 200 IAS=8.4A 150 IAS=14A 100 t [ns] td(on) 10 1 tr 50 10 0 0 -1 10 10 0 10 1 10 2 0 25 50 75 100 125 150 ID [A] starting Tch [C] 3 2SK3913-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=48V Single Pulse Avalanche Current I AV [A] 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/fdt/scd/ 4 |
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