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SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 - OCTOBER 1995 7 FEATURES * SUITABLE FOR GENERAL AF APPLICATIONS AND CLASS B AUDIO OUTPUT STAGES UPTO 3W * HIGH hFE AND LOW SATURATION VOLTAGE COMPLEMENTARY TYPE PARTMARKING DETAILS- BC869 BC868 - CAC BC868-16 - CCC BC868-25 - CDC BC868 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 25 20 5 2 1 1 -65 to +150 UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) hFE BC868-16 BC868-25 Transition Frequency Output Capacitance fT Cobo 50 85 60 100 160 60 45 MIN. 25 20 5 10 1 10 0.5 1.0 TYP. MAX. UNIT V V V A mA A V V CONDITIONS. IC=100A IC=10mA* IE=10A VCB = 25V VCB = 25V,Tamb =150oC VEB=5V IC=1A, IB=100mA* IC=1A, VCE=1V* IC=5mA, VCE=10V* IC=500mA, VCE=1V* IC=1A, VCE=1V* IC=500mA, VCE=1V* IC=500mA, VCE=1V* MHz pF IC=10mA, VCE=5V f = 35MHz VCB=10V, f=1MHz 375 250 375 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT449 datasheet. 3 - 11 |
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