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 VHB40-28F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI VHB40-28F is an epitaxial planar transistor, designed for 28 V FM Class C RF amplifiers utilized in base stations. This device utilizes ballasted emitter resistors to achieve optimum load mismatch capability.
PACKAGE STYLE .380 4L FLG
.112 x 45 A
B
E
C
O.125 NOM. FULL R J .125
FEATURES:
* 175 MHz 28 V Class C * Efficiency 60% min * POUT = 40 W @ 7.6 dB * OmnigoldTM Metalization System
B
C D F E
E
I GH
MAXIMUM RATINGS
IC VCBO VCE0 VEBO PDISS TJ TSTG JC 5.0 A 65 V 35 V 4.0 V 60 W -65 C to +200 C -65 C to +150 C 2.9 C/W
DIM A B C D E F G H I J .240 / 6.10 .004 / 0.10 .085 / 2.16 .160 / 4.06 MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
ORDER CODE: ASI10726
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICBO ICES hFE
TC = 25 C
NONETEST CONDITIONS
IC = 200 mA IC = 200 mA IC = 10 mA IE = 10 mA VCB = 30 V VCE = 30 V VCE = 5.0 V IC = 500 mA
MINIMUM TYPICAL MAXIMUM
35 65 65 4.0 1.0 10 5.0 200
UNITS
V V V V mA mA ---
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
1/2
ERROR! REFERENCE SOURCE NOT FOUND. VHB40-28F
Cob PG C
VCB = 30 V VCE = 28 V POUT = 40 W PIN = 7.0 W
f = 1.0 MHz f = 175 MHz 7.6 60
65
pF dB %
IMPEDANCE DATA
VCE = 28 V f = 175 MHz PIN (W) 2 4 6 8 POUT = (W) 28.5 43.0 53.0 60.5 ZIN () 0.85 + j1.20 1.05 + j1.32 1.01 + j1.42 1.05 + j1.35 ZCL = () 3.25 + j7.05 4.45 + j5.40 5.25 + j4.42 5.45 + j4.12
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004
Specifications are subject to change without notice.
REV. C
2/2


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