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| High Power Handling Small Capacitance at Zero Bias, Extremely Small Reverse Bias Small Series Order Resistance Small Insertion Loss, High Isolation Surface Mount Type (for reflow assembly) Applications High Power Antenna Switch (10W output two-way radio) General Description The XB15A709A0HR PIN diode is designed for solid state antenna switching applications in mobile radios. The XB15A709A0HR employs a square outline which makes it suitable for reflow assembly on surface mounting. Dimensions CATHODE MARK (RED) Unit :mm POWER DISSIPATION TEST BOARD PRINT BOARD XB15A709 COPPERPLATE (t=35 ) MIN. 1 .9 MAX. 2 .5 2.9mm 26mm MIN. 0 .1 MAX. 0 .8 MIN. 2 .5 MAX. 3 .5 MIN. 1 .9 MAX. 2 .5 20mm 50mm 20mm (GLASS EPOXY, THICKNESS t=1.6 mm) Absolute Maximum Ratings SYMBOL VR P Tj Tstg PARAMETER Reverse Voltage Power Dissipation (surface contact)* Junction Temperature Storage Temperature RATINGS 50 1 *Glass Epoxy, t=1.6mm 175 -55 to 175 Ta=25 OC UNITS V W O O C C !1 Electrical characteristics Ta=25 OC SYMBOL IR VF Ct PARAMETER Reverse Current Forward Voltage Diode Capacitance Forward Series Resistance Parallel Resistance TEST CONDITIONS MIN V R = 50V IF = 50mA V R = 40V, f = 1MHz IF = 50mA, f = 100MHz V R = 0V, f = 100MHz 1.0 0.5 3.0 LIMITS TYP MAX 10 1.0 1.2 0.75 A V pF k UNITS r fs RP Electrical Characteristics Forward Current vs. Forward Voltage 1.E-01 100 OC 75 OC 1.E-02 50 OC 25 OC 0 OC 50 OC 1.E-03 1.E-09 25 OC 1.E-08 75 OC 1.E-07 100 OC Reverse Current vs. Reverse Voltage 1.E-04 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.E-10 1.E+00 1.E+01 1.E+02 1.E+03 Forward Series Resistance vs. Forward Current 1.E+01 Diode Capacitance vs. Reverse Voltage 1.E+01 f =100MHz, Ta = 25 C O f =1MHz, Ta = 25 C O 1.E+00 1.E+00 1.E-01 1.E-01 1.E-03 1.E-02 1.E-01 1.E-02 1.E+00 1.E+01 1.E+02 1.E+03 Parallel Resistance vs. Reverse Voltage 1.E+05 f =100MHz, Ta = 25 C O !1 1.E+04 Rp () 1.E+03 1.E+02 1.E+00 1.E+01 1.E+02 !1 !1 |
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