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| Datasheet File OCR Text: |
| THX15 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting MAXIMUM RATINGS IC VCB PDISS TJ T STG JC 10 A 110 V 233 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 0.75 OC/W 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BV CEO BV CES BV CBO BV EBO ICES ICEO hFE Cob Pg IMD3 C IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 60 V VCE = 30 V VCE = 6.0 V VCB = 50 V VCE = 50 V f = 30 MHz TC = 25 OC TEST CONDITIONS VBE = 0 V MINIMUM TYPICAL MAXIMUM 55 110 110 4.0 UNITS V V V V VBE = 0 V 5.0 5.0 mA mA --pF dB dBc % IC = 1.4 A f = 1.0 MHz Icq = 100 mA Pout =150 W (PEP) 15 50 220 14 37 -37 45 -30 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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