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TC426 TC427 TC428 1.5A Dual High-Speed Power Mosfet Drivers
FEATURES
s High-Speed Switching (CL = 1000pF) ........... 30nsec s High Peak Output Current ................................. 1.5A s High Output Voltage Swing .................. VDD - 25mV GND +25mV s Low Input Current (Logic "0" or "1") ................ 1A s TTL/CMOS Input Compatible s Available in Inverting and Noninverting Configurations s Wide Operating Supply Voltage ............ 4.5V to 18V s Current Consumption -- Inputs Low .................................................. 0.4mA -- Inputs High .................................................... 8mA s Single Supply Operation s Low Output Impedance ........................................ 6 s Pinout Equivalent of DS0026 and MMH0026 s Latch-Up Resistant: Withstands > 500mA Reverse Current s ESD Protected ......................................................2kV PIN CONFIGURATIONS (DIP AND SOIC)
NC 1 IN A 2 GND 3 IN B 4 NC 1 IN A 2 GND 3 IN B 4 NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A 2, 4 7, 5
GENERAL DESCRIPTION
The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25mV of ground or positive supply. The low impedance, high-current driver outputs swing a 1000pF load 18V in 30nsec. The unique current and voltage drive qualities make the TC426/TC427/TC428 ideal power MOSFET drivers, line drivers, and DC-to-DC converter building blocks. Input logic signals may equal the power supply voltage. Input current is a low 1A, making direct interface to CMOS/bipolar switch-mode power supply control ICs possible, as well as open-collector analog comparators. Quiescent power supply current is 8mA maximum. The TC426 requires 1/5 the current of the pin-compatible bipolar DS0026 device. This is important in DC-to-DC converter applications with power efficiency constraints and high-frequency switch-mode power supply applications. Quiescent current is typically 6mA when driving a 1000pF load 18V at 100kHz. The inverting TC426 driver is pin-compatible with the bipolar DS0026 and MMH0026 devices. The TC427 is noninverting; the TC428 contains an inverting and noninverting driver. Other pin compatible driver families are the TC1426/ 27/28, TC4426/27/28, and TC4426A/27A/28A.
TC426
6 VDD 5 OUT B 8 NC 7 OUT A
INVERTING
2, 4
7, 5
TC427
6 VDD 5 OUT B 8 NC 7 OUT A
NONINVERTING
ORDERING INFORMATION
2 7
TC428
6 VDD 5 OUT B
Part No.
4 5
Package
8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP
Configuration
Inverting Inverting Inverting Complementary Inverting Inverting Noninverting Noninverting Noninverting Complementary Noninverting Noninverting Complementary Complementary Complementary Complementary Complementary Complementary
Temperature Range
0C to +70C 0C to +70C -40C to +85C -40C to +85C -25C to +85C -55C to +125C 0C to +70C 0C to +70C -40C to +85C -40C to +85C -25C to +85C -55C to +125C 0C to +70C 0C to +70C -40C to +85C -40C to +85C -25C to +85C -55C to +125C
COMPLEMENTARY NC = NO INTERNAL CONNECTION
FUNCTIONAL BLOCK DIAGRAM
V+
500A 2.5mA
TC426 TC427 TC428
NONINVERTING OUTPUT (TC427) INPUT
INVERTING OUTPUT (TC426)
Note: The TC428 has one inverting and one noninverting driver. Ground any unused driver input.
TC426COA TC426CPA TC426EOA TC426EPA TC426IJA TC426MJA TC427COA TC427CPA TC427EOA TC427EPA TC427IJA TC427MJA TC428COA TC428CPA TC428EOA TC428EPA TC428IJA TC428MJA
(c) 2001 Microchip Technology Inc.
DS21415A
TC426/7/8-7 12/6/99
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V Input Voltage, Any Terminal .... VDD + 0.3V to GND - 0.3V Power Dissipation (TA 70C) Plastic ............................................................. 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW Derating Factor Plastic ........................................................... 8mW/C CerDIP ....................................................... 6.4mW/C SOIC ............................................................. 4mW/C Operating Temperature Range C Version ............................................... 0C to +70C ...................................................................... I Version - 25C to +85C E Version .......................................... - 40C to +85C M Version ....................................... - 55C to +125C Maximum Chip Temperature ................................. +150C Storage Temperature Range ................ - 65C to +150C Lead Temperature (Soldering, 10 sec) ................. +300C
ELECTRICAL CHARACTERISTICS: TA = +25C with 4.5V VDD 18V, unless otherwise specified.
Symbol Input VIH VIL IIN Output VOH VOL ROH ROL IPK Parameter Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage High Output Resistance Low Output Resistance Peak Output Current Test Conditions Min 2.4 -- -1 VDD - 0.025 -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 10 6 1.5 -- -- -- -- -- -- Max -- 0.8 1 -- 0.025 15 10 -- 30 30 50 75 8 0.4 Unit V V A V V A nsec nsec nsec nsec mA mA
0V VIN VDD
IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V
Switching Time (Note 1) tR Rise Time tF Fall Time tD1 Delay Time tD2 Delay Time Power Supply IS Power Supply Current
Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs)
ELECTRICAL CHARACTERISTICS:
Input VIH VIL IIN Output VOH VOL ROH ROL tR tF tD1 tD2 Power Supply IS Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage High Output Resistance Low Output Resistance Rise Time Fall Time Delay Time Delay Time Power Supply Current
Over Operating Temperature Range with 4.5V VDD 18V, unless otherwise specified. 2.4 -- -10 VDD - 0.025 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 13 8 -- -- -- -- -- -- -- 0.8 10 -- 0.025 20 15 60 30 75 120 12 0.6 V V A V V nsec nsec nsec nsec mA mA
DS21415A
0V VIN VDD
IOUT = 10mA, VDD = 18V IOUT = 10mA, VDD = 18V Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs)
2
Switching Time (Note 1)
NOTE: 1. Switching times guaranteed by design.
TC426/7/8-7 12/6/99
(c) 2001 Microchip Technology Inc.
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
*Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
SUPPLY BYPASSING
Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 1000pF load to 18V in 25nsec requires an 0.72A current from the device power supply. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1F film capacitor in parallel with one or two 0.1F ceramic disk capacitors normally provides adequate bypassing. The TC426/427/428 CMOS drivers have greatly reduced quiescent DC power consumption. Maximum quiescent current is 8mA compared to the DS0026 40mA specification. For a 15V supply, power dissipation is typically 40mW. Two other power dissipation components are: * Output stage AC and DC load power. * Transition state power. Output stage power is: Po = PDC + PAC = Vo (IDC) + f CL VS2 Where: Vo = DC output voltage IDC = DC output load current f = Switching frequency Vs = Supply voltage In power MOSFET drive applications the PDC term is negligible. MOSFET power transistors are high impedance, capacitive input devices. In applications where resistive loads or relays are driven, the PDC component will normally dominate. The magnitude of PAC is readily estimated for several cases: A. 1. f 2. CL 3. Vs 4. PAC = 200kHZ =1000pf = 18V = 65mW B. 1. f 2. CL 3. VS 4. PAC = 200kHz =1000pf = 15V = 45mW
GROUNDING
The TC426 and TC428 contain inverting drivers. Ground potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Individual ground returns for the input and output circuits or a ground plane should be used.
INPUT STAGE
The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5mA current source load. With a logic "1" input, the maximum quiescent supply current is 8 mA. Logic "0" input level signals reduce quiescent current to 0.4mA maximum. Minimum power dissipation occurs for logic "0" inputs for the TC426/427/428. Unused driver inputs must be connected to VDD or GND. The drivers are designed with 100mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5V, making the device TTL compatible over the 4.5V to 18V supply operating range. Input current is less than 1A over this range. The TC426/427/428 may be directly driven by the TL494, SG1526/1527, SG1524, SE5560, and similar switchmode power supply integrated circuits.
POWER DISSIPATION
The supply current vs frequency and supply current vs capacitive load characteristic curves will aid in determining power dissipation calculations.
During output level state changes, a current surge will flow through the series connected N and P channel output MOSFETS as one device is turning "ON" while the other is turning "OFF". The current spike flows only during output transitions. The input levels should not be maintained between the logic "0" and logic "1" levels. Unused driver inputs must be tied to ground and not be allowed to float. Average power dissipation will be reduced by minimizing input rise times. As shown in the characteristic curves, average supply current is frequency dependent.
(c) 2001 Microchip Technology Inc.
DS21415A
3
TC426/7/8-7 12/6/99
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
TYPICAL CHARACTERISTICS
Rise and Fall Times vs. Supply Voltage
70 60 50
TIME (nsec)
Delay Times vs. Supply Voltage
90 80
DELAY TIME (nsec)
Rise and Fall Times vs. Temperature
40
35
C L = 1000pF TA = +25C
C L = 1000pF TA = +25C t D2
TIME (nsec)
C L= 1000 pF VDD = 18V
tR
70 60 50 40 30
30
25
40 30 20 10
tF
20
15
tR tF
t D1
10
0
5
10 15 SUPPLY VOLTAGE (V)
20
0
5
10 15 SUPPLY VOLTAGE (V)
20
0 -25
0
25 50 75 100 125 150 TEMPERATURE (C)
Delay Times vs. Temperature
100 90
DELAY TIME (nsec)
80
Supply Current vs. Capacitive Load
1K 70
SUPPLY CURRENT (mA)
Rise and Fall Times vs. Capacitive Load
TA = +25C VDD = 18V
100
TIME (nsec)
C L = 1000pF VDD = 18V
tD2
60 50 40 30 20 10 0 10
TA = +25C VDD = 18V
400kHz tR
80 70 60 50 40 30 -25
200kHz
tF
10
tD1
20kHz
1 100 1000 CAPACITIVE LOAD (pF)
10K
0
25 50 75 100 125 150 TEMPERATURE (C)
10
100 1000 CAPACITIVE LOAD (pF)
10K
Supply Current vs. Frequency
30
High Output vs. Voltage
2.20 1.20
Low Output vs. Voltage
TA= +25C
OUTPUT VOLTAGE (V)
T = +25C A CL = 1000pF
VDD = 18V
1.76
VDD - VOUT (V)
TA= +25C
0.96
VDD = 5V
SUPPLY CURRENT (mA)
20
VDD = 8V
1.32
10V
0.72
10V
13V
0.88
0.48
10
5V
18V
0.44
15V
0.24
0 1 10 100 FREQUENCY (kHz) 1000
0
10 20 30 40 50 60 70 80 90 100 CURRENT SOURCED (mA)
0
10 20 30 40 50 60 70 80 90 100 CURRENT SUNK (mA)
Supply Voltage vs Quiescent Supply Current
20 NO LOAD BOTH INPUTS LOGIC "1" TA = +25C
Supply Voltage vs Quiescent Supply Current
20
1600
Thermal Derating Curves
1400
MAX. POWER (mW)
SUPPLY VOLTAGE (V)
NO LOAD BOTH INPUTS LOGIC "0" TA = +25C
8 Pin DIP 8 Pin CerDIP
1200 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120
SUPPLY VOLTAGE (V)
15
15
10
10
5
5
0
1
2 3 4 5 SUPPLY CURRENT (mA)
6
0
AMBIENT TEMPERATURE (C)
0
50 100 150 200 250 SUPPLY CURRENT (A)
300
TC426/7/8-7 12/6/99
4
(c) 2001 Microchip Technology Inc.
DS21415A
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
VDD = 18V
VDD = 18V
1F 0.1F
1F
0.1F
INPUT
1
OUTPUT CL = 1000pF
INPUT
1
OUTPUT CL = 1000pF
INPUT: 100kHz, square wave, tRISE = tFALL 10nsec
2
2
TC426 (1/2 TC428)
INPUT: 100kHz, square wave, tRISE = tFALL 10nsec
TC427 (1/2 TC428)
+5V INPUT 0V 18V OUTPUT 0V 10% 10% tD1 90% tF
90%
+5V INPUT
90%
tD2
tR 90%
0V 18V
10% 90% tR 10% tD2 90% tF 10%
tD1 OUTPUT 0V
10%
Test Figure 1. Inverting Driver Switching Time Test Circuit
Test Figure 2. Noninverting Driver Switching Time Test Circuit
VOLTAGE DOUBLER
+ 15V
30.
29. 28.
VOUT (V)
0.1F
+ -
4.7F
1N4001
27. 26. 25. 24. 23.
6 2 f IN = 10kHz 1/2 TC426 3 - 7 +
1N4001 + -
VOUT
10F
47F
22. 0
10 20 30 40 50 60 70 80 90 100 IOUT (mA)
VOLTAGE INVERTER
+ 15V + 0.1F -
-5
-6 -7
4.7F
VOUT (V)
6 2 f IN = 10kHz 1/2 TC426 3 + 7 - 1N4001 - + VOUT 10F 1N4001 47F
-8 -9 -10 -11
-12 -13 -14 0
10 20 30 40 50 60 70 80 90 100 IOUT (mA)
(c) 2001 Microchip Technology Inc.
DS21415A
5
TC426/7/8-7 12/6/99
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
PACKAGE DIMENSIONS
8-Pin PDIP (Narrow)
PIN 1
.260 (6.60) .240 (6.10)
.045 (1.14) .030 (0.76) .400 (10.16) .348 (8.84) .200 (5.08) .140 (3.56) .150 (3.81) .115 (2.92)
.070 (1.78) .040 (1.02)
.310 (7.87) .290 (7.37)
.040 (1.02) .020 (0.51)
.015 (0.38) .008 (0.20) .400 (10.16) .310 (7.87)
3 MIN.
.110 (2.79) .090 (2.29)
.022 (0.56) .015 (0.38)
8-Pin CDIP (Narrow)
.110 (2.79) .090 (2.29)
PIN 1
.300 (7.62) .230 (5.84)
.055 (1.40) MAX. .400 (10.16) .370 (9.40) .200 (5.08) .160 (4.06) .200 (5.08) .125 (3.18)
.020 (0.51) MIN. .320 (8.13) .290 (7.37) .040 (1.02) .020 (0.51) .015 (0.38) .008 (0.20) .400 (10.16) .320 (8.13) .065 (1.65) .020 (0.51) .045 (1.14) .016 (0.41)
.150 (3.81) MIN.
3 MIN.
Dimensions: inches (mm) 6
(c) 2001 Microchip Technology Inc. DS21415A
TC426/7/8-7 12/6/99
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
PACKAGE DIMENSIONS
8-Pin SOIC (Narrow)
PIN 1
.157 (3.99) .150 (3.81)
.244 (6.20) .228 (5.79)
.050 (1.27) TYP.
.197 (5.00) .189 (4.80) .069 (1.75) .053 (1.35) .020 (0.51) .010 (0.25) .013 (0.33) .004 (0.10) .010 (0.25) .007 (0.18) .050 (1.27) .016 (0.40)
8 MAX.
Dimensions: inches (mm)
(c) 2001 Microchip Technology Inc.
DS21415A
7
TC426/7/8-7 12/6/99
1.5A Dual High-Speed Power Mosfet Drivers TC426 TC427 TC428
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01/09/01
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All rights reserved. (c) 2001 Microchip Technology Incorporated. Printed in the USA. 1/01
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights arising from such use or otherwise. Use of Microchipis products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, except as maybe explicitly expressed herein, under any intellectual property rights. The Microchip logo and name are registered trademarks of Microchip Technology Inc. in the U.S.A. and other countries. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
TC426/7/8-7 12/6/99
8
(c) 2001 Microchip Technology Inc.
DS21415A

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