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T0931
SiGe Power Amplifier for CW Applications
Description
The T0931 is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors' Silicon-Germanium (SiGe) technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter readers and ISM phones. With a single supply voltage operation of + 2.4 to 3.4 V and a neglectable leakage current in power-down mode, the pager amplifier needs less external components and thus helps to reduce system costs. It is suited for operation in CW mode.
Features
D Up to 33 dBm output power in CW mode D Power Added Efficiency (PAE) 47% D Single supply operation at 2.4 V (1 W) or 3.2 V (2 W) no negative voltage necessary D Current consumption in power-down mode 10 A, no external power supply switch required D Power ramp control D Simple input and output matching D Simple output matching for maximum flexibility D Flipchip package
Block Diagram
VCC1 VCC2 GND
RFin Match (900 MHz) Match Match
RFout/VCC3 (900 MHz) Harmonic tuning
VCTL VCC,CTL GND
Control
Figure 1. Block diagram
Ordering Information
Extended Type Number T0931-DD Package Flipchip Remarks
Rev. A1, 16-May-00
1 (9)
Preliminary Information
T0931
Pad Description
Pad 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 *) Symbol Function Vcc1 Supply voltage 1 RFin RF input VCCctrl Supply voltage for control VCTL Control input Vcc2 Supply voltage 2 GND Ground GND Ground GND Ground GND Ground GND Ground GND Ground GND Ground GND Ground RFout/ Vcc3 RF output/ supply voltage 3 RFout/ Vcc3 RF output/ supply voltage 3 RFout/ Vcc3 RF output/ supply voltage 3 RFout/ Vcc3 RF output/ supply voltage 3 Relative to centre of Pad 4 X-Coordinate of Pad *) Y-Coordinate of Pad *) (mm) (mm) 0 1500 0 1000 0 500 0 0 500 1630 500 891 500 142 900 1630 1527 1630 1527 1230 1527 830 1527 430 1527 30 2474 1391 2474 991 2474 591 2474 191
Pad Location
5 1 14 10 8 9
2
15 6 11
1.58
16 3 12
4
7 13
17
0.0 3.26
Dimensions-scale division = 100 mm, for pad coordinates see Pad Decsription table.
Figure 2. Pad location
2 (9)
Rev. A1, 16-May-00
Preliminary Information
T0931
Absolute Maximum Ratings
All voltages are referred to GND Parameter Supply voltage Input power Gain control voltage Duty cycle for operation Junction temperature Storage temperature Symbol VCC Pin VCTL Tj Tstg Min. Typ. Max. 4.0 12 2.0 100 +150 +150 Unit V dBm V % C C
0
-40
Thermal Resistance
Parameters Symbol Value t.b.d. Unit
Operating Range
Parameter Supply voltage Symbol VCC1 VCC2 VCC3 VCC,CTL Tamb fin Min. 1.8 Typ. 2.4 Max. 3.0 Unit V
Ambient temperature Input frequency
- 25 900
+ 85
C MHz
Rev. A1, 16-May-00
3 (9)
Preliminary Information
T0931
Electrical Characteristics for 1 Watt Application
VCC = VCC1, ... , VCC3, VCC, CTL = + 2.4 V, VCTL = 1.7 V, Tamb = + 25C, 50- input and 50- external output match Parameters Power supply Supply voltage Current consumption: active mode Current consumption (leakage current) in power-down mode RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power: normal conditions Test Conditions / Pins Symbol VCC I I Min. 1.8 Typ. 2.4 0.9 Max. 3.0 Unit V A mA
Pout = 30 dBm, PAE = 47% VCTL 0.2 V
10
fin Zi Pin Pin = 0 to 12 dBm, Pout = 30 dBm Zo Pin = 5 dBm, RL = RG = 50 VCC = 2.4 V, Tamb = +25C VCC = 1.8 V, Tamb = +25C VCTL = 0.3 V VCC = 2.4 V, Pout = 27 dBm VCC = 2.4 V, Pout = 30 dBm Temp = -25 to + 85 C, no spurious >= -60 dBc Pout = 30 dBm, all phases
880
900 50 5
935 12 2:1
MHz W dBm
50
W
Pout Pout PAE PAE VSWR VSWR 2fo 3fo
Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and output Power control Control curve Power control range Control voltage range Control current
30 27 - 20 40 47 10 : 1 10 : 1 -35 -35 -73 -85 50 -70 -82 0.5
dBm dBm dBm % %
dBc dBc dBm dBm ms dB
Pout = 30 dBm, RBW = 100 kHz Pin = 0 to 10 dBm, VCTL 0.2 V (power down) Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL
150 50 0.3 2.0 200
dB/V dB V mA
Note: *) with external matching (see application circuit)
4 (9)
Rev. A1, 16-May-00
Preliminary Information
T0931
Electrical Characteristics for 2 Watt Application
VCC = VCC1, ... , VCC3, VCC, CTL = + 3.2 V, VCTL = 1.9 V, Tamb = + 25C, 50- input and 50- external output match Parameters Power supply Supply voltage Current consumption: active mode Current consumption (leakage current) in power-down mode RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power: normal conditions Test Conditions / Pins Symbol VCC I I Min. 2.6 Typ. 3.2 1.33 Max. 3.6 Unit V A mA
Pout = 33 dBm, PAE = 47% VCTL 0.2 V
10
fin Zi Pin Pin = 0 to 12 dBm, Pout = 30 dBm Zo Pin = 5 dBm, RL = RG = 50 VCC = 3.2 V, Tamb = +25C VCC = 2.2 V, Tamb = +25C VCTL = 0.3 V VCC = 3.2 V, Pout = 27 dBm Temp = -25 to + 85 C, no spurious >= -60 dBc Pout = 33 dBm, all phases
880
900 50 5
935 12 2:1
MHz W dBm
50
W
Pout Pout PAE VSWR VSWR 2fo 3fo
Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and output Power control Control curve Power control range Control voltage range Control current
33 30 - 20 47 10 : 1 10 : 1 -35 -35 -73 -85 50 -70 -82 0.5
dBm dBm dBm %
dBc dBc dBm dBm ms dB
Pout = 33 dBm, RBW = 100 kHz Pin = 0 to 10 dBm, VCTL 0.2 V (power down) Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL
150 50 0.3 2.0 200
dB/V dB V mA
Note: *) with external matching (see application circuit)
Rev. A1, 16-May-00
5 (9)
Preliminary Information
T0931
Application Circuit
VCC 220nF
1nF
22pF
100pF 100pF
flip chip T0931
T6 VCTL 22 pF 8.2 pF RFIN 900 MHz T1* VCC,CTL VCCC2 T3 T2 220nF 220nF 39pF AVX T4 56pF VCCC1 T5 T7 1/4 wavelength line 56pF RFOUT 10 pF h.Q. AVX
3.9nH
Microstrip line: FR4; Epsilon (r): 4.3; metal Cu: 3.5 mm distance 1. layer - rf ground 0.5 mm length (mm) x width (mm) T1: 2.08 x 1 + 2.6 x 0.25 T2: 4.6 x 0.5 T3: 1.5 x 0.25 + 0.93 x 0.2 T4: 11.85 x 1.0 T5: 6.7 x 0.5 + 3.14 x 0.25 T6: 68.06 x 0.5 T7: 1.34 x 0.27 + 5.74 x 1.16 T...*: -> stripline can be reduced to minimum length
Figure 3. Application circuit
6 (9)
Rev. A1, 16-May-00
Preliminary Information
T0931
PCB Layout
Figure 4. PCB layout
Rev. A1, 16-May-00
7 (9)
Preliminary Information
T0931
Package Information
Flipchip
Bump 0.3 mm 0.5 mm
Silicon
Passivation
technical drawings according to DIN specifications 16526
8 (9)
Rev. A1, 16-May-00
Preliminary Information
T0931
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
4.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com
TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
Rev. A1, 16-May-00
9 (9)
Preliminary Information

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