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MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM200DY-2H
* * * * *
IC Collector current ........................ 200A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drivers, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
113 25 25 21.5 B2X B2 E2
B2
6 15 6
B1 E1 E2
6 15 6
B2X
14
C1
70 90
C2E1
E2
C1
C2E1
E2
B1X
5.5
8 B1X
4-6.5
93 Tab#110, t=0.5
E1 B1
3-M6
17 8
17
8
17
6.5
31
LABEL
7
21
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 200 200 1560 10 2000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 870 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=200A, IB=4A -IC=200A (diode forward voltage) IC=200A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=200A, IB1=-IB2=4A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 800 2.5 3.5 1.8 -- 3.0 15 3.0 0.08 0.35 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
400 Tj=25C 10 4 7 5 3 2 10 3 7 5 3 2
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
320
IB=4A IB=2A
VCE=5.0V
240
IB=1A IB=0.4A
VCE=2.8V
160 IB=0.2A 80
0
0
1
2
3
4
5
10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 45 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 VCE=2.8V 5 Tj=25C 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 3.8
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
10 1 7 5 4 3 2 10 0 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE(sat) Tj=25C Tj=125C IB=4A 2 3 4 5 7 10 2 2 3 4 5 7 10 3
10 -1 10 1
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 3
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
2 101 7 5 4 3 2 10 0 7 5 4 3 10 1 ts tf
4
3
SWITCHING TIME
2 IC=200A IC=50A 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 IC=100A
Tj=25C Tj=125C VCC=600V IB1=-IB2=4A
ton
2 3 4 5 7 10 2
2 3 4 5 7 10 3
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 COLLECTOR CURRENT IC (A) 2 ts, tf (s) 10 1 7 5 4 3 2 10 0 7 5 4 3 10 0 ts
REVERSE BIAS SAFE OPERATING AREA 400 Tj=125C 300 IB2=-10A IB2= -4A
SWITCHING TIME
200
tf
Tj=25C Tj=125C VCC=600V IB1=4A IC=200A
100
2 3 4 5 7 10 1
2 3 4 5 7 10 2
0
0
200
400
600
800
1000 VCE (V)
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 100s
DC
DERATING FACTOR OF F. B. S. O. A.
50s DERATING FACTOR (%)
COLLECTOR CURRENT IC (A)
90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
200s
SECOND BREAKDOWN AREA
1ms
10 1 7 5 3 2 TC =25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V)
80 100 120 140 160 TC (C)
CASE TEMPERATURE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.10 0.08 Zth (j-c) (C/ W)
10 3 7 5 4 3 2 10 2 7 5 4 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C
0.06
0.04
0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s)
10 1 0.4
0.8
1.2
1.6
2.0
2.4
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM200DY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A)
2000
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL)
10 3 7 Tj=25C 5 Tj=125C 3 VCC=600V 2 IB1=-IB2=4A 10 2 7 5 3 2 10 2 Irr Qrr 10 1
1600
800
400
0
10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 1 10 0 trr 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
CONDUCTION TIME (CYCLES AT 60Hz)
FORWARD CURRENT IF (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 0.40
0.32
Zth (j-c) (C/ W)
0.24
0.16
0.08 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
TIME (s)
Feb.1999
trr (s)
1200
Irr (A), Qrr (c)

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