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D
S G D
S
G S
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27
APT40M75JN 400V 56.0A 0.075 APT40M90JN 400V 51.0A 0.090
"UL Recognized" File No. E145592 (S)
ISOTOP(R)
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM, lLM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
(R)
SINGLE DIE ISOTOP(R) PACKAGE
All Ratings: TC = 25C unless otherwise specified.
APT 40M75JN APT 40M90JN UNIT Volts Amps
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
400 56 224 30 520 4.16
400 51 204
Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec.
1
and Inductive Current Clamped
Volts Watts W/C C
-55 to 150 300
STATIC ELECTRICAL CHARACTERISTICS
Symbol BVDSS Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current
2
MIN APT40M75JN APT40M90JN APT40M75JN APT40M90JN APT40M75JN APT40M90JN
TYP
MAX
UNIT Volts
400 400 56
Amps
ID(ON)
(VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
2
51 0.075
Ohms
RDS(ON)
0.090 250 1000 100 2 4
A nA Volts
IDSS IGSS VGS(TH)
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, I D = 2.5mA)
THERMAL CHARACTERISTICS
Symbol RJC RCS Characteristic Junction to Case Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) MIN TYP MAX UNIT C/W
050-4037 Rev E
0.24 0.06
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61
EUROPE
Avenue J.F. Kennedy Bat B4 Parc Cadera Nord
DYNAMIC CHARACTERISTICS
Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
APT40M75/40M90JN
Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX UNIT
5630 1320 510 241 34 117 16 31 45 13
6800 1950 720 370 50 180 32 62 70 26
ns nC pF
Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage
1
MIN APT40M75JN APT40M90JN APT40M75JN APT40M90JN
TYP
MAX
UNIT
56 51 224 204 1.8 370 8 740 16
Volts ns C Amps
2
(VGS = 0V, IS = -ID [Cont.])
Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s)
PACKAGE CHARACTERISTICS
Symbol LD LS VIsolation CIsolation Torque Characteristic / Test Conditions Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) Drain-to-Mounting Base Capacitance (f = 1MHz) Maximum Torque for Device Mounting Screws and Electrical Terminations. MIN TYP MAX UNIT nH Volts
3 5 2500 35 13
pF in-lbs
1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.3 , THERMAL IMPEDANCE (C/W) D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 0.01 SINGLE PULSE 0.001 10-5 10-4
Note:
PDM
t1 t2 Duty Factor D = t1/t2
050-4037 Rev E
Z
JC
Peak TJ = PDM x ZJC + TC
10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT40M75/40M90JN
200 VGS=10 & 15V ID, DRAIN CURRENT (AMPERES) 160 8V 120 7V 80 6V 40 5V ID, DRAIN CURRENT (AMPERES) 9V 200 VGS=15V 10V 9V 8V 7V 80 6V 40 5V 0
160
120
0 40 80 120 160 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 TJ = -55C ID, DRAIN CURRENT (AMPERES) 80
VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
0
0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 3.0
TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.]
GS D
TJ = +25C
2.5
60
TJ = +125C
2.0 VGS=10V 1.5 VGS=20V 1.0
40
20
TJ = +125C TJ = +25C
TJ = -55C
0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 60 ID, DRAIN CURRENT (AMPERES)
0
0.0
0
50 100 150 200 250 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.2
50
APT40M75JN
1.1
40 APT40M90JN 30
1.0
0.9
20
10 0
0.8
50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5
I = 0.5 I [Cont.]
D D
25
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4
0.7
-50
V
GS
= 10V
2.0
1.2
1.5
1.0
1.0
0.8
0.5
0.6 050-4037 Rev E
0.0 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
0.4
-50
APT40M75/40M90JN
500
APT40M75JN
20,000
APT40M90JN
ID, DRAIN CURRENT (AMPERES)
10S C, CAPACITANCE (pF) 100S 1mS
100 50
OPERATION HERE LIMITED BY RDS (ON)
10,000 Ciss 5,000 Coss Crss
APT40M75JN APT40M90JN
10 5 10mS 100mS 1 .5 DC TC =+25C TJ =+150C SINGLE PULSE
1,000 500
.1
1 5 10 50 100 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA
I = I [Cont.]
D D
.1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) 200
100
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
20 VDS=80V 16 VDS=200V
160
12
VDS=320V
120 TJ =+150C
8
80
4
40
TJ =+25C TJ =-55C
100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
0
0
0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
0
APT Reserves the right to change, without notice, the specifications and information contained herein.
SOT-227 (ISOTOP(R)) Package Outline
11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Source terminals are shorted internally. Current handling capability is equal for either Source terminal.
* Source
050-4037 Rev E
Gate
Dimensions in Millimeters and (Inches)
ISOTOP(R) is a Registered Trademark of SGS Thomson.

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