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| UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW DESCRIPTION KEY FEATURES W W W.Microsemi .COM The UM9301 PIN Diode utilizes special overall chip geometry with an extremely thick intrinsic "I" region, to offer unique capabilities in both RF switch and attenuator applications. Volume production also makes the diode an economical choice suitable for many commercial low power equipments. The UM9301 has been designed for use in bridged TEE attenuator circuits commonly utilized for gain and slope control in CATV amplifiers. Low distortion and high dynamic range are characteristic of the diodes' outstanding performance. The UM9301 is also appropriate for switch applications, when little or no bias voltage is available. Frequent applications occur in portable 12 volt-powered communications equipments, operating at frequencies as low as 2 MHz. Specified low distortion Low distortion properties at low reverse bias Resistance specified at 3 current points High reliability fused-in-glass construction APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS IMPORTANT: For the most current data, consult MICROSEMI's website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Rating Reverse Voltage Reverse Current Average Power Dissipation (1, 2) Storage Temperature Operating Temperature Symbol VR IR PA T stg T op Value 75 10 1.0 -65 to 175 -65 to 175 Unit Volts A Watts C C Little or no Bias required. Operates as low as 2MHZ. Available in leaded or surface mount packages. UM9301SM UM9301 UM9301SM (1) Mounted on 2" square by 0.06' thick FR4 board with a 1" x 1" square 2-ounce copper pattern.. (2) Lead 1/2 inch. (12.7mm) Total to 25C Contact. UM9301/UM9301SM UM9301/UM9301SM Copyright 2005 Rev. A, 2005-07-05 Microsemi 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW ELECTRICAL PARAMETERS @ 25C (unless otherwise specified) W W W.Microsemi .COM Parameter Off Characteristics Symbol RS RS I Conditions I = 100 mA; f = 100 MHZ I = 1 mA; f = 100 MHZ I = 0.01 mA; f = 100 MHZ f = 100 MHZ Frequency Range: 10-300MHZ RS = 75 @ 100MHZ Diode Terminates 75 line f1 = 10 MHZ; f2 = 13 MHZ P = 50 dBmV; See Test Circuit F1 = 67 MHZ; f2 = 77 MHZ P = 50 dBmV; See Test Circuit F1 = 10 MHZ; F2 = 13 MHZ P = 50 dBmV; See Test Circuit Triple Beat; 205 +67 -77MHZ P = 50 dBmV; See Test Circuit 12 Channel Test P = 50 dBmV; See Test Circuit Dix Hills Test Set V = 75 V I = 10 mA V = 0V; f = 100 MHZ Min Typ. 1.7 80 5000 1.1 Max 3.0 150 2.0 Units mA dB Diode Resistance Current for RS = 75 IR Return Loss 3000 0.5 25 55 70 75 95 75 50 -dB -dB Second Order Distortion V 65 -dB -dB -dB Third Order Distortion Cross Modulation Distortion Reverse Current Carrier Lifetime Dynamic characteristics V V IR CT 10 4.0 0.8 A s pF Capacitance ELECTRICAL ELECTRICAL PRODUCT PRELIMINARY DATA - Information contained in this document is pre-production data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright 2005 Rev. A, 2005-07-05 Microsemi 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW W W W.Microsemi .COM ELECTRICAL ELECTRICAL Copyright 2005 Rev. A, 2005-07-05 Microsemi 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW W W W.Microsemi .COM UM9301SM UM9301 PACKAGE DATA PACKAGE DATA Copyright 2005 Rev. A, 2005-07-05 Microsemi 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4 UM9301/UM9301SM Commercial Attenuator Diode PRODUCT PREVIEW W W W.Microsemi .COM NOTES NOTES Copyright 2005 Rev. A, 2005-07-05 Microsemi 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 5 |
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