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| BC807-16/ BC807-25 BC807-40 General Purpose Transistor PNP Silicon Maximum Ratings ( TA=25 C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Symbol V CEO VCBO VEBO IC COLLECTOR 3 MARKING DIAGRAM 3 1 BASE 2 EMITTER 1 2 SOT-23 Value -45 -50 -5.0 500 Unit V V V mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature Symbol PD R qJA PD R qJA TJ,Tstg Max 225 1.8 556 300 2.4 417 -55 to +150 Unit mW mW/ C C/W mW mW/ C C/W C Device Marking BC807-17=5A, BC807-25=5B, BC807-40=5C 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.weitron.com.tw WEITRON BC807-16/BC807-25 BC807-40 WE IT R ON (TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit Electrical Characteristics Off Characteristics Characteristics Collector-Emitter Breakdown Voltage (IC= -10mA) Collector-Emitter Breakdown Voltage (IC=-10 A ,VEB=0) Emitter-Base Breakdown Voltage (IE=-1.0 A) Collector Cutoff Current (VCB=20V) (VCB=20V, TA=150 C) V(BR)CEO V(BR)CES V(BR)EBO ICBO -45 -50 -5.0 - - 100 5.0 V V V nA mA Electrical Characteristics (TA=25 C Unless Otherwise noted) Symbol Min Typ Max Unit Characteristics On Characteristics DC Current Gain (IC= -100mA, VCE=-1.0V) BC807-16 BC807-25 BC807-40 hFE 100 160 250 40 VCE(sat) VBE(on) 250 400 600 -0.7 -1.2 - (IC= -500mA,VCE=-1.0V) Collector-Emitter Saturation Voltage (IC= -500mA, IB=50mA) Base-Emitter On Voltage (IC= -500mA, IB=-1.0V) V V Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance (VCB= -10V, f=1.0MHz) fT Cobo 100 10 MHz pF WEITRON http://www.weitron.com.tw BC807-16/BC807-25 BC807-40 1000 h FE , DC CURRENT GAIN VCE = -1.0 V TA = 25 C 100 10 -0.1 -1.0 -10 -100 IC , COLLECTOR CURRENT (mA) -1000 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOL TS) -1.0 TJ = 25 C V, VOLTAGE (VOLTS) -0.8 IC = -500 mA -1.0 TA = 25C -0.8 VBE(sat) @ I C/IB = 10 VBE(on) @ V CE = -1.0 V -0.6 -0.6 -0.4 IC = -300 mA -0.2 0 -0.01 IC = -10 mA -0.1 -1.0 -10 IB , BASE CURRENT (mA) IC = -100 mA -0.4 -0.2 VCE(sat) @ I C/IB = 10 -100 0 -1.0 -10 -100 IC , COLLECTOR CURRENT (mA) -1000 Figure 2. Saturation Region Figure 3. "On" Voltages q V , TEMPERA TURE COEFFICIENTS (mV/ C) +1.0 VC for VCE(sat) C, CAPACITANCE (pF) 100 0 -1.0 -2.0 VB for VBE -1.0 Figure 4. T emperature Coefficients WEITRON http://www.weitron.com.tw q q Cib 10 Cob -10 -100 IC , COLLECTOR CURRENT -1000 1.0 -0.1 -1.0 -10 VR , REVERSE VOLTAGE (VOLTS) -100 Figure 5. Capacitances BC807-16/BC807-25 BC807-40 SOT-23 Package Outline Dimension S OT -23 A TOP VIEW D E G H B C K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 WEITRON http://www.weitron.com.tw |
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