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| Data Sheet No. 2N3764 Type 2N3764 Geometry 6706 Polarity PNP Qual Level: JAN - JANTXV Features: * * * * General-purpose transistor for switching and amplifier applicatons. Housed in a TO-46 case. Also available in chip form using the 6706 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/396 which Semicoa meets in all cases. Generic Part Number: REF: MIL-PRF-19500/396 TO-46 Maximum Ratings TC = 25 C unless otherwise specified o Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Operating Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC TJ TSTG Rating 40 40 5.0 1.5 -55 to +200 -55 to +200 Unit V V V mA o C C o Data Sheet No. 2N3764 Electrical Characteristics TC = 25oC unless otherwise specified OFF Characteristics Collector-Base Breakdown Voltage IC = 10 A Collector-Emitter Breakdown Voltage IC = 10 mA Emitter-Base Breakdown Voltage IE = 10 A Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V Collector-Emitter Cutoff Current VEB = 2.0 V, VCE = 20 V, TA = 150oC Collector-Base Cutoff Current VCB = 20 V Emitter-Base Cutoff Current VEB = 2.0 V Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX1 ICEX2 ICBO IEBO Min 40 40 5.0 --------- Max ------100 150 100 200 Unit V V V nA A nA nA ON Characteristics Forward current Transfer Ratio IC = 10 mA, VCE = 1.0 V IC = 150 mA, VCE = 1.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulse test) IC = 1.0 A, VCE = 1.5 V (pulse test) IC = 1.5 A, VCE = 5.0 V (pulse test) IC = 500 mA, VCE = 1.0 V (pulsed), TA = -55oC Symbol hFE1 hFE2 hFE3 hFE4 hFE5 hFE6 VCE(sat)1 VCE(sat)2 VCE(sat)3 VCE(sat)4 VBE(sat)1 VBE(sat)2 VBE(sat)3 VBE(sat)4 Min 35 40 40 30 30 20 ----------------- Max ----140 120 ----0.1 0.22 0.50 0.90 0.8 1.0 1.2 1.4 Unit ------------V dc V dc V dc V dc V dc V dc V dc V dc Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA (pulse test) IC = 150 mA, IC = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IC = 100 mA (pulse test) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1 mA IC = 150 mA, IB = 15 mA (pulse test) IC = 500 mA, IB = 50 mA (pulse test) IC = 1.0 A, IB = 100 mA (pulse test) Small Signal Characteristics Magnitude of Common Emitter Short Circuit Forward Current Transfer Ratio IC = 50 mA, VCE = 10 V, f = 100 MHz Open Circuit Output Capacitance VCB = 10 V, IE = 0, 100 kHz < f < 1 MHz Input Capacitance, Output Open Circuited VEB = 0.5 V, IC = 0, 100 kHz < f < 1 MHz Symbol |hFE| COBO CIBO Min 1.8 ----- Max 6.0 25 80 Unit --pF pF Switching Characteristics Per Figure 1, MIL-S-19500/396D Pulse Delay Time Pulse Rise Time Pulse Storage Time Pulse Fall Time Symbol td tr ts tf Min --------- Max 8 35 80 35 Unit ns ns ns ns |
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