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MG300Q2YS60A MITSUBISHI IGBT Module MG300Q2YS60A(1200V/300A 2in1) High Power Switching Applications Motor Control Applications * * * * Integrates a complete half bridge power circuit and fault-signal output circuit in one package. (short circuit and over temperature) The electrodes are isolated from case. Low thermal resistance VCE (sat) = 2.4 V (typ.) Equivalent Circuit 1 5 6 7 FO E1/C2 4 1 2 3 OT FO E2 Signal terminal 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open 2004-10-01 1/8 MG300Q2YS60A Package Dimensions 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open Signal Terminal Layout 7 5 8 2.54 25.4 0.6 6 1. 5. G (L) G (H) 2. 6. FO (L) FO (H) 3. 7. E (L) E (H) 4. 8. VD Open 3 1 4 2.54 2 2.54 Weight: 375 g 2004-10-01 2/8 MG300Q2YS60A Maximum Ratings (Ta = 25C) Stage Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Inverter Forward current 1 ms Collector power dissipation (Tc = 25C) Control voltage (OT) Control Fault input voltage Fault input current Junction temperature Storage temperature range Module Operation temperature range Isolation voltage Screw torque DC 1 ms DC Symbol VCES VGES IC ICP IF IFM PC VD VFO IFO Tj Tstg Tope Visol Rating 1200 20 300 600 300 A 600 2800 20 20 20 150 -40~125 -20~100 2500 (AC 1 min) 3 (M5) W V V mA C C C V Nm Unit V V A Electrical Characteristics (Tj = 25C) 1. Inverter Stage Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Switching time Turn-off time Fall time Reverse recovery time Forward voltage Symbol IGES ICES VGE (off) VCE (sat) Cies td (on) toff tf trr VF IF = 300 A VCC = 600 V, IC = 300 A VGE = 15 V, RG = 6.8 (Note 1) Test Condition VGE = 20 V, VCE = 0 VGE = +10 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 300 mA VGE = 15 V, IC = 300 A Tj = 25C Tj = 125C Min 6.0 0.10 Typ. 7.0 2.4 21000 2.1 Max +3/-4 100 1.0 8.0 2.8 3.2 1.00 2.00 0.50 0.50 2.6 V s pF Unit mA nA mA V V VCE = 10 V, VGE = 0, f = 1 MHz Note 1: Switching time test circuit & timing chart 2. Control (Tc = 25C) Characteristics Fault output current Over temperature Fault output delay time Symbol OC OT td (Fo) Test Condition VGE = 15 V VCC = 600 V, VGE = 15 V Min 360 100 Typ. Max 125 8 Unit A C s 2004-10-01 3/8 MG300Q2YS60A 3. Module (Tc = 25C) Characteristics Junction to case thermal resistance Case to fin thermal resistance Symbol Rth (j-c) Rth (c-f) Test Condition Inverter IGBT stage Inverter FRD stage With silicon compound Min Typ. 0.013 Max 0.044 0.068 C/W Unit C/W Switching Time Test Circuit RG -VGE IF VCC IC RG L Timing Chart 90% 10% VGE 90% Irr Irr IC trr 20% Irr 90% 10% td (on) td (off) 10% tf 2004-10-01 4/8 MG300Q2YS60A Remark Short circuit capability is 6 s after fault output signal. Please keep following condition to use fault output signal. * VCC < 750 V = * 14.8 V < VGE < 17.0 V = = * RG > 6.8 = * Tj < 125C = To use this product, VGE must be provided higher than 14.8 V. In case VGE is less than 14.8 V, fault signal FO may not be output even under error conditions. Characteristics P-N power terminal supply voltage Gate voltage Gate resistance Switching frequency Symbol VCC VGE RG fc Min 14.8 6.8 Typ. 600 15 Max 750 17 20 Unit V V kHz 2004-10-01 5/8 MG300Q2YS60A IC - VCE 600 Common emitter Tj = 25C 500 15 V 500 600 Common emitter Tj = 125C IC - VCE VGE = 20 V 15 V 12 V 400 10 V 300 IC (A) 400 Collector current 300 10 V 200 Collector current IC (A) VGE = 20 V 12 V 200 9V 100 9V 8V 100 8V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) VCE - VGE 12 Common emitter 12 Common emitter VCE - VGE (V) Tj = 125C 10 (V) Tj = 25C 10 VCE 8 VCE 8 6 Collector-emitter voltage Collector-emitter voltage 6 IC = 600 A 4 300 A 2 150 A 0 0 4 IC = 600 A 300 A 2 150 A 0 0 5 10 15 20 5 10 15 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE - VGE 12 Common emitter 600 Common emitter VCE = 5 V 500 Tj = -40C 10 IC - VGE (V) 8 IC (A) Collector current VCE 400 Collector-emitter voltage 6 300 4 300 A 2 IC = 600 A 200 25C Tj = 125C 100 150 A -40C 0 0 5 10 15 20 0 0 4 8 12 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) 2004-10-01 6/8 MG300Q2YS60A IF - VF 600 Common cathode 1000 VGE = 0 V 500 RL = 2 Tj = 25C VCE, VGE - QG 20 Common emitter (V) Forward current IF 400 Collector-emitter voltage VCE 800 16 600 V 400 200 V VCE = 0 V 200 4 8 300 125C 200 Tj = 25C -40C 100 0 0 1 2 3 4 5 0 0 500 1000 1500 2000 0 2500 Forward voltage VF (V) Charge QG (nC) SW time - RG 10000 1000 Common emitter VCC = 600 V toff IC = 300 A VGE = 15 V Eon, Eoff - RG (mJ) Tj = 25C Tj = 125C (ns) 1000 SW time td (on) tr 100 Common emitter VCC = 600 V IC = 300 A 10 0 VGE = 15 V 5 10 Tj = 25C Tj = 125C 15 20 25 tf Eon , Eoff td (off) ton Eon 100 SW loss Eoff 10 0 5 10 15 20 25 Gate resistance RG () Gate resistance RG () SW time - IC 10000 100 Eon, Eoff - IC toff td (off) ton (ns) 1000 (mJ) Eon, Eoff Eoff Eon SW time 10 100 Common emitter tr VCC = 600 V RG = 6.8 VGE = 15 V 50 100 150 200 Tj = 25C Tj = 125C 250 300 SW loss tf td (on) Common emitter VCC = 600 V RG = 6.8 VGE = 15 V 1 0 50 100 150 200 Tj = 25C Tj = 125C 250 300 10 0 Collector current IC (A) Collector current IC (A) 2004-10-01 Gate-emitter voltage 600 400 V 12 VGE (V) (A) 7/8 MG300Q2YS60A Irr, trr - IF 1000 100 Edsw - IF Edsw (mJ) Reverse recovery time trr (ns) Reverse recovery current Irr (A) trr 10 100 Irr Reverse recovery loss 1 Common cathode VCC = 600 V RG = 6.8 VGE = 15 V 0.1 0 Tj = 25C Tj = 125C 200 250 300 Common cathode VCC = 600 V RG = 6.8 VGE = 15 V 10 0 50 100 150 200 Tj = 25C Tj = 125C 250 300 50 100 150 Forward current IF (A) Forward current IF (A) C - VCE 100000 Cies 1000 Safe-operating area IC max (pulsed)* IC max (continuous) 100 s IC (A) (pF) 10000 50 s 100 *: Single nonrepetitive pulse Tc = 25C Curves must 10 be derated linearly with increase in temperature. 3 1 10 C Coes 1000 Common emitter VGE = 0 V f = 1 MHz Tj = 25C 100 0.01 0.1 1 10 100 Cres Collector current Capacitance 1 ms DC operation 100 1000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Reverse bias SOA 1000 Rth - tw 1 IC (A) Tc = 25C 100 Rth (j-c) (C/W) Collector current 0.1 Diode stage 10 Tj < 125C = RG = 6.8 VGE = 15 V 1 0 400 800 1200 Transistor stage 0.01 0.001 0.001 0.01 0.1 1 10 Collector-emitter voltage VCE (V) Pulse width tw (s) 2004-10-01 8/8 |
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