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| LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N-Channel SOT-23 * Pb-Free Package is Available. L2N7002LT1 3 1 2 MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Drain Current - Continuous TC = 25C (Note 1.) - Continuous TC = 100C (Note 1.) - Pulsed (Note 2.) Gate-Source Voltage - Continuous - Non-repetitive (tp 50 s) Symbol VDSS VDGR ID ID IDM Value 60 60 115 75 800 Unit Vdc Vdc mAdc CASE 318, STYLE 21 SOT- 23 (TO-236AB) 115 mAMPS 60 VOLTS R DS(on) = 7.5 W N - Channel 3 VGS VGSM 20 40 Vdc Vpk THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 3.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 556 300 2.4 RJA TJ, Tstg 417 -55 to +150 C/W C Unit 1 mW mW/C 2 RJA PD C/W mW mW/C MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 702 W 1 2 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. 3. FR-5 = 1.0 x 0.75 x 0.062 in. 4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina. Gate 702 W Source = Device Code = Work Week ORDERING INFORMATION Device L2N7002LT1 L2N7002LT1G Marking 702 702(Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel L2N7002LT1-1/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0, ID = 10 Adc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate-Body Leakage Current, Forward (VGS = 20 Vdc) Gate-Body Leakage Current, Reverse (VGS = -20 Vdc) TJ = 25C TJ = 125C V(BR)DSS IDSS IGSSF IGSSR 60 - - - - - - - - - - 1.0 500 100 -100 Vdc Adc nAdc nAdc ON CHARACTERISTICS (Note 2.) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) On-State Drain Current (VDS 2.0 VDS(on), VGS = 10 Vdc) Static Drain-Source On-State Voltage (VGS = 10 Vdc, ID = 500 mAdc) (VGS = 5.0 Vdc, ID = 50 mAdc) Static Drain-Source On-State Resistance (VGS = 10 V, ID = 500 mAdc) TC = 25C TC = 125C (VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25C TC = 125C Forward Transconductance (VDS 2.0 VDS(on), ID = 200 mAdc) VGS(th) ID(on) VDS(on) - - rDS(on) - - - - gFS 80 1.4 - 1.8 - - 7.5 13.5 7.5 13.5 - mmhos - - 3.75 0.375 Ohms 1.0 500 1.6 - 2.5 - Vdc mA Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss - - - 17 10 2.5 50 25 5.0 pF pF pF SWITCHING CHARACTERISTICS (Note 2.) Turn-On Delay Time Turn-Off Delay Time (V DD = 25 Vdc , ID ^ 500 mAdc, RG = 25 , RL = 50 , Vgen = 10 V) td(on) td(off) - - 7 11 20 40 ns ns BODY-DRAIN DIODE RATINGS Diode Forward On-Voltage (IS = 11.5 mAdc, VGS = 0 V) Source Current Continuous (Body Diode) Source Current Pulsed 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. VSD IS ISM - - - - - - -1.5 -115 -800 Vdc mAdc mAdc L2N7002LT1-2/3 LESHAN RADIO COMPANY, LTD. L2N7002LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25C VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 I D, DRAIN CURRENT (AMPS) 0.8 0.6 0.4 0.2 1.0 VDS = 10 V -55C 125C 25C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 2.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain-Source On-Resistance Figure 4. Temperature versus Gate Threshold Voltage L2N7002LT1-3/3 |
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