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FLL410IK-4C L-Band High Power GaAs FET FEATURES High Output Power: Pout=46.0dBm(Typ.) High Gain: GL=11.5dB(Typ.) High PAE: add=44%(Typ.) Broad Band: 3.4~3.7GHz Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 - 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 107.0 -65 to +175 175 o Unit V V W C C o RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item DC Input Voltage Gate Current Gate Current Operating Channel Temperature Symbol VDS IGF IGR Tch RG=5 RG=5 Condition Limit 12 117 -23 145 Unit V mA mA o C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Drain Current Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS Vp VGSO POUT 1 Test Conditions VDS=5V , VGS=0V VDS=5V , IDS=100mA IGS=-1.0mA VDS=12V f=3.6 GHz IDS=3A Pin=36.0dBm Channel to Case Min. -0.1 -5.0 45.0 10.5 - Limit Typ. 4.0 -0.3 46.0 11.5 6.7 44 1.0 Max. -0.5 8.7 1.4 Unit A V V dBm dB A % o Output Power Linear Gain * Drain Current Power-added Efficiency Thermal Resistance GL Idsr add Rth C/W *GL is measured at Pin=22.0dBm ESD Class 2000V~ CASE STYLE: IK Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.1 Oct 2003 1 FLL410IK-4C L-Band High Power GaAs FET OUTPUT POWER vs. INPUT POWER OUTPUT POWER , POWER ADDED EFFICIENCY vs. TOTAL INPUT POWER VDS=12V, IDS(DC)=3A, f=3.6GHz Pin=38dBm Pin=34dBm 48 46 Output Power [dBm] 44 42 40 38 36 34 32 3.3 3.4 VDS=12V, IDS(DC)=3A 48 46 Output Power [dBm] 44 42 40 38 36 34 32 21 23 25 27 29 31 33 35 37 39 Input Power [dBm] P.A.E Pout 80 70 60 50 40 30 20 10 0 Power Added Efficiency [%] Pin=30dBm Pin=26dBm Pin=22dBm 3.5 3.6 3.7 3.8 Frequency [GHz] IMD vs. TOTAL OUTPUT POWER -20 -24 -28 -32 -36 -40 -44 -48 -52 -56 -60 VDS=12V, f=3.6GHz, f=5MHz IM3 IM5 IMD [dBc] 2A 3A 2A 5A 3A 5A 24 26 28 30 32 34 36 38 40 42 44 Total Output Power [dBm] 2 FLL410IK-4C L-Band High Power GaAs FET S-PARAMETER +50j +25j +100j +90 +10j 3. H z 6G +250j 3.6GHz 0 180 6 2 Scale for |S21| 3.6GHz 0 3. H z 6G -10j 25 10 -250j -25j -100j S 11 S 22 -50j 0.3 -90 Scale for |S 12| S 12 S 21 VDS=12V, IDS=3.0A Freq [GHz] 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 S11 MAG ANG 0.58 35.68 0.42 13.30 0.25 -20.74 0.14 -94.08 0.23 -164.13 0.36 163.77 0.45 142.74 0.50 124.23 0.50 108.29 0.47 93.47 0.39 78.62 0.25 65.52 0.07 82.54 0.20 179.28 0.42 166.40 0.60 150.07 0.71 136.32 0.78 124.93 0.81 115.73 0.84 107.96 0.85 101.79 S21 MAG 2.79 3.06 3.39 3.74 3.98 4.33 4.40 4.11 3.94 4.12 4.35 4.47 4.54 4.40 3.75 3.02 2.49 2.10 1.73 1.47 1.34 ANG -88.92 -111.83 -135.39 -152.40 -172.83 160.16 136.09 116.10 97.42 79.27 59.40 36.18 10.84 -17.44 -46.02 -67.67 -86.14 -103.97 -120.83 -133.98 -145.90 S12 MAG 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.05 0.05 0.04 0.03 0.03 0.02 0.02 ANG -106.81 -133.45 -165.02 167.96 138.89 113.65 88.25 67.09 45.57 26.25 5.29 -15.70 -37.11 -63.99 -90.06 -113.42 -130.59 -143.89 -155.27 -165.37 -172.96 S22 MAG ANG 0.79 62.67 0.78 52.26 0.74 39.91 0.68 26.00 0.60 11.96 0.52 -2.49 0.45 -17.92 0.39 -35.62 0.34 -56.13 0.33 -79.22 0.32 -105.46 0.32 -133.85 0.29 -165.63 0.25 156.61 0.21 109.33 0.21 58.18 0.25 18.29 0.30 -8.49 0.36 -27.76 0.40 -43.35 0.42 -58.31 3 FLL410IK-4C L-Band High Power GaAs FET BOARD LAYOUT(Reference) r=3.5 |
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