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| AOD400 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD400 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD400 is Pb-free (meets ROHS & Sony 259 specifications). AOD400L is a Green Product ordering option. AOD400 and AOD400L are electrically identical. Features VDS (V) = 30V ID = 10 A (VGS = 10V) RDS(ON) < 30 m (VGS = 10V) RDS(ON) < 36 m (VGS = 4.5V) RDS(ON) < 52 m (VGS = 2.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 12 10 10 40 15 30 20 10 2.1 1.3 -55 to 175 Units V V A A mJ W W C TC=25C TC=100C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol t 10s Steady-State Steady-State RJA RJC Typ 17.4 50 4 Max 30 60 7.5 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AOD400 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=10A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=10A VGS=2.5V, ID=5A gFS VSD IS Forward Transconductance VDS=5V, ID=10A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 0.7 40 25 35 28.5 40.5 21 0.77 1 3 857 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 97 71 1.4 9.7 VGS=10V, VDS=15V, ID=10A 1.63 3.1 3.5 VGS=10V, VDS=15V, RL=1.5, RGEN=6 IF=10A, dI/dt=100A/s 3.7 25 4 20 13 24 3.6 12 1030 30 42 36 52 1.1 Min 30 0.002 1 5 100 1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0 : Aug 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AOD400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 60 Normalized On-Resistance 50 RDS(ON) (m) 40 30 20 10 0 0 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=2.5V 1.8 VGS=10V, 10A 1.6 1.4 1.2 1 VGS=4.5V, 10A 2V 4 VGS=1.5V 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 10V 20 3V 4.5V 2.5V 12 ID(A) 8 25C 125C 16 VDS=5V VGS=10V VGS=2.5V, 5A 100 90 80 70 RDS(ON) (m) 125C IS (A) 60 50 40 30 20 10 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=10A 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C Alpha & Omega Semiconductor, Ltd. AOD400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=15V ID=10A 1400 1200 Capacitance (pF) 1000 800 600 400 200 0 0 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss Ciss 4 VGS (Volts) 3 2 1 0 100.0 200 TJ(Max)=175C, TA=25C 10s Power (W) 160 120 80 40 TJ(Max)=175C TA=25C 10.0 ID (Amps) RDS(ON) limited 1ms 100s 10ms 1.0 DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=7.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOD400 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 16 ID(A), Peak Avalanche Current 14 12 10 8 6 4 2 0 0.00001 0 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B) TA=25C 25 20 15 10 5 tA = L ID BV - VDD Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability Power Dissipation (W) 12 10 Current rating ID(A) 8 6 4 2 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) 50 40 Power (W) 30 20 10 0 0.001 TA=25C 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 ZJA Normalized Transient Thermal Resistance 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=60C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 0.01 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. |
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