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Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
q q q q q
Unit: mm
7.00.3 3.00.2 3.50.2
Low collector to emitter saturation voltage VCE(sat) High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector current IC I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings 40 50 20 40 5 20 10 15 1.3 150 -55 to +150 Unit V
7.20.3
0.80.2
s Features
1.10.1
0.850.1 0.40.1
1.00.2
10.0 -0.
+0.3
0.750.1
2.30.2 4.60.4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1752 2SD1752A 2SD1752 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter I Type Package
3.50.2 2.00.2
7.00.3
Unit: mm
0 to 0.15
3.00.2
10.20.3 1.0 max.
Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
A A
1.10.1
2.5
0.750.1
0.5 max.
0.90.1 0 to 0.15
W C
1
2
3
2.30.2
C
4.60.4
1:Base 2:Collector 3:Emitter I Type Package (Y)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SD1752 2SD1752A 2SD1752 2SD1752A
(TC=25C)
Symbol ICBO IEBO VCEO hFE1 hFE2
*
Conditions VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 10A, IB = 0.33A IC = 10A, IB = 0.33A VCE = 10V, IC = 0.5A, f = 10MHz VCB = 10V, IE = 0, f = 1MHz IC = 3A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 20V
min
typ
max 50 50 50
Unit A A V
20 40 45 90 260 0.6 1.5 120 200 0.3 0.4 0.1
Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*h FE2
VCE(sat) VBE(sat) fT Cob ton tstg tf
V V MHz pF s s s
Rank classification
Q 90 to 180 P 130 to 260
Rank hFE2
2.50.2
Emitter to base voltage
V
7.20.3
1.0
2.50.2
1.0
emitter voltage 2SD1752A
V
1
Power Transistors
PC -- Ta
20 10 (1) TC=Ta (2) Without heat sink (PC=1.3W) TC=25C IB=100mA 90mA 80mA 70mA 6 60mA 50mA 40mA 4 30mA 20mA 2 (2) 0 0 20 40 60 80 100 120 140 160 0 0 1 2 3 4 5 6 10mA
2SD1752, 2SD1752A
IC -- VCE
Collector to emitter saturation voltage VCE(sat) (V)
10
VCE(sat) -- IC
IC/IB=20
Collector power dissipation PC (W)
Collector current IC (A)
15
(1)
8
3 TC=100C 1 25C 0.3 -25C 0.1
10
5
0.03
0.01 0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) -- IC
Base to emitter saturation voltage VBE(sat) (V)
10 IC/IB=20 1000
hFE -- IC
1000 VCE=2V
fT -- IC
VCE=10V f=1MHz TC=25C
Forward current transfer ratio hFE
3 25C -25C TC=100C
300 TC=100C 100 25C -25C 30
Transition frequency fT (MHz)
3 10 30
300 100 30 10 3 1 0.3 0.1 0.01 0.03
1
0.3
0.1
10
0.03
3
0.01 0.1
0.3
1
3
10
30
1 0.1
0.3
1
0.1
0.3
1
3
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
ton, tstg, tf -- IC
100 30 Pulsed tw=1ms Duty cycle=1% IC/IB=30(IB1=-IB2) VCC=20V TC=25C
Area of safe operation (ASO)
100 30 ICP Non repetitive pulse TC=25C t=10ms
Switching time ton,tstg,tf (s)
Collector current IC (A)
10 3 1 0.3 0.1 0.03 0.01 0 1 2
10 3
IC 1ms 300ms
ton tstg tf
1 0.3 0.1 0.03 0.01
3
4
5
1
3
10
30
2SD1752A
100
2SD1752
300
1000
Collector current IC (A)
Collector to emitter voltage VCE (V)
2
Power Transistors
Rth(t) -- t
103 (1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink
2SD1752, 2SD1752A
Thermal resistance Rth(t) (C/W)
102
(1) (2)
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3

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