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| MCC Features omponents 21201 Itasca Street Chatsworth !"# $ % !"# TSMBJ1005C-072 * * * * * Oxide-Glass passivated Junction Bi-Directional protection in a single device Surge capabilities up to 100A@10/1000us or 400A@8/20us High Off-State impedance and Low On-State voltage Plastic material has UL flammability classification 94V -0 Transient Voltage Protection Device 65 Volts DO-214AA (SMBJ) H Mechanical Data * * * Case : Molded plastic Polarity : None cathode band denotes Approx Weight : 0.093grams Cathode Band J Maximum Ratings Characteristic Non-repetitive peak impulse current Non-repetitive peak On-state current Operating temperature range Junction and storage temperature range Symbol IPP ITSM TOP TJ, TSTG Value 100A 50A -40~150oC -55~150oC DIM A B C D E F G H J Unit 10/1000us 8.3ms, one-half cycle E F G DIMENSIONS INCHES MIN .078 .077 .002 --.030 .065 .205 .160 .130 MM MIN 2.00 1.96 .05 --.76 1.65 5.21 4.06 3.30 A C D B Thermal Resistance Characteristic Thermal Resistance junction to lead Thermal Resistance junction to ambient Typical positive temperature coefficient for breakdown voltage Symbol RqJL RqJA MAX .096 .083 .008 .02 .060 .091 .220 .180 .155 MAX 2.44 2.10 .20 .51 1.52 2.32 5.59 4.57 3.94 NOTE Value 20 C/W 100 C/W 0.1%/oC o o Unit On recommended pad layout SUGGESTED SOLDER PAD LAYOUT 0.090" 0.085" VBR/TJ 0.070" www.mccsemi.com TSMBJ1005C-072 ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified Parameter On-State Rated Off-state Breakover Voltage Breakover Current Repetitive Off Leakage Voltage @IT =1.0A -state Voltage Curr ent@V DRM MCC Holding Current Off-State Capacitance CJ pF Typ. 200 Symbol Units Limit TSMBJ1005C-072 VDRM Volts Max 65 IDRM uA Max 5 VBO Volts Max 88 VT Volts Max 5 IBOmA Min 50 IBO+ mA Max 800 IHmA Min 150 IH+ mA Max 800 MAXIMUM RATED SURGE WAVEFORM Waveform Standard Ipp (A) 2/10 us 8/20 us 10/160 us 10/700 us 10/560 us 10/1000 us GR-1089-CORE IEC 61000-4-5 FCC Part 68 ITU-T K20/21 FCC Part 68 GR-1089-CORE 500 400 200 200 150 100 Ipp ; PEAK PULSE CURRENT (%) 100 Peak value (Ipp) tr = rise time to peak value tp = decay time to half value 50 Half value 0 tr tp TIME Symbol VDRM IDRM VBR IBR VBO IBO IH VT IPP CO NOTE Parameter Stand-off voltage Leakage current at stand-off voltage Breakdown voltage Breakdown current Breakover voltage Breakover current Holding current On state voltage Peak pulse current Off-state capacitance NOTE: 2 NOTE: 1 IBR IBO IH IDRM IPP I VT VBR VDRM VBO V 1. I H > ( V L/ R L) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge recovery time. It does not exceed 30ms. 2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias. www.mccsemi.com TSMBJ1005C-072 Fig.1 - Off-State Current v.s Junction Temperature 100 1.2 MCC Fig.2 - Relative Variation of Breakdown Voltage v.s Junction Temperature NORMALISED BREAKDOWN VOLTAGE I(DRM) , OFF-STATE CURRENT(uA) 10 VBR(TJ) 1.15 VBR(TJ=25) 1 1.1 VDRM = 50V 0.1 1.05 1 0.01 0.95 0.001 -25 0 25 50 75 100 125 150 0.9 -50 -25 0 25 50 75 100 125 150 175 Tj , JUNCTION TEMPERATURE () Tj ; JUNCTION TEMPERATURE () Fig.3 - Relative Variation of Breakover Voltage v.s Junction Temperature 100 1.1 Fig.4 - On-State Current v.s On-State Voltage NORMALISED BREAKOVER VOLTAGE VBO(TJ) 1.05 VBO(TJ=25) I(T) ; ON-STATE CURRENT (A) 10 1 TJ = 25 0.95 -50 -25 0 25 50 75 100 125 150 175 1 1 2 3 4 5 6 7 8 9 Tj ; JUNCTION TEMPERATURE () V(T) ; ON-STATE VOLTAGE Fig.5 - Relative Variation of Holding Current v.s Junction Temperature 2 1 Fig.6 - Relative Variation of Junction Capacitance v.s Reverse Voltage Bias NORMALISED HOLDING CURRENT 1.5 1 NORMALISED CAPACITANCE CO(VR) CO(VR = 1V) Tj =25 f=1MHz VRMS = 1V 0.5 IH(TJ) IH(TJ =25) 0 -50 -25 0 25 50 75 100 125 0.1 1 10 100 Tj ; JUNCTION TEMPERATURE () VR ; REVERSE VOLTAGE (V) www.mccsemi.com TSMBJ1005C-072 TYPICAL APPLICATION CIRCUITS MCC FUSE RING TELECOM EQUIPMENT E.G. MODEM TIP TSPD 1 RING PTC TSPD 1 TELECOM EQUIPMENT E.G. ISDN TSPD 2 TIP PTC RING PTC TSPD 2 TSPD 1 TSPD 3 TELECOM EQUIPMENT E.G. LINE CARD TIP PTC The PTC (Positive Temperature Coefficient) is an overcurrent protection device. www.mccsemi.com |
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