View HMC590_1018427.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
1
AMPLIFIERS - CHIP
Typical Applications
The HMC590 is ideal for use as a power amplifier for: * Point-to-Point Radios * Point-to-Multi-Point Radios * Test Equipment & Sensors * Military End-Use * Space
Features
Saturated Output Power: +31.5 dBm @ 25% PAE Output IP3: +41 dBm Gain: 24 dB DC Supply: +7.0 V @ 820 mA 50 Ohm Matched Input/Output Die Size: 2.47 mm x 1.33 mm x 0.1 mm
Functional Diagram
General Description
The HMC590 is a high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifier which operates from 6 to 10 GHz. This amplifier die provides 24 dB of gain, +31.5 dBm of saturated power at 25% PAE from a +7.0V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All data is taken with the chip in a 50 ohm test fixture connected via 0.025mm (1 mil) diameter wire bonds of length 0.31mm (12 mils). For applications which require optimum OIP3, Idd should be set for 520 mA, to yield +41 dBm OIP3. For applications which require optimum output P1dB, Idd should be set for 820 mA, to yield up to +32 dBm Output P1dB.
Electrical Specifications, TA = +25 C, Vdd = +7V, Idd = 820 mA[1]
Parameter Frequency Range Gain Gain Variation Over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept Supply Current (Idd) [1] Adjust Vgg between -2 to 0V to achieve Idd= 820 mA typical. [2] Measurement taken at 7V @ 520mA, Pin / Tone = -15 dBm (IP3)[2] 27 21 Min. Typ. 6 - 10 24 0.05 10 10 30 31.5 41 820 28.5 0.07 22 Max. Min. Typ. 6.8 - 9 25 0.05 10 10 31.5 32 41 820 0.07 Max. Units GHz dB dB/ C dB dB dBm dBm dBm mA
1 - 214
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
Broadband Gain & Return Loss
30 25 20 RESPONSE (dBm) 15
Gain vs. Temperature
34 32 30 28 GAIN (dB) 26 24 22 20 18 16 14 12 10
+25C +85C -55C
1
AMPLIFIERS - CHIP
1 - 215
10 5 0 -5 -10 -15 -20 -25 4 5 6 7 8
S21 S11 S22
9
10
11
12
6
6.5
7
7.5
8
8.5
9
9.5
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss vs. Temperature
0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz)
+25C +85C -55C
Output Return Loss vs. Temperature
0
-5 RETURN LOSS (dB)
-10
-15
+25C +85C -55C
-20
-25 4 5 6 7 8 9 10 11 12 FREQUENCY (GHz)
P1dB vs. Temperature
35 34 33 32 P1dB (dBm) 31 30 29 28 27 26 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
Psat vs. Temperature
35 34 33 32 Psat (dBm) 31 30 29 28 27 26 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
1
AMPLIFIERS - CHIP
P1dB vs. Current
35 34 33 32 P1dB (dBm) 31 30 29 28 27 26 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
520 mA 620 mA 720 mA 820 mA
Psat vs. Current
35 34 33 32 Psat (dBm) 31 30 29 28 27 26 25 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
520 mA 620 mA 720 mA 820 mA
Output IP3 vs. Temperature 7V @ 520 mA, Pin/Tone = -15 dBm
46 44 42 40 OIP3 (dBm) 38 36 34 32 30 28 26 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
Power Compression @ 8 GHz, 7V @ 820 mA
35 Pout(dBm), GAIN (dB), PAE(%) 30 25 20 15 10 5 0 -14 -12 -10 -8
Pout Gain PAE
-6
-4
-2
0
2
4
6
8
10 12 14
INPUT POWER (dBm)
Output IM3, 7V @ 520 mA
80 70 60 IM3 (dBc)
Output IM3, 7V @ 820 mA
80 70 60 IM3 (dBc) 50 40 30 20 10
6GHz 7GHz 8GHz 9GHz 10GHz
50 40 30 20 10
6GHz 7GHz 8GHz 9GHz 10GHz
0 -20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
0 -20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
Pin/Tone (dBm)
Pin/Tone (dBm)
1 - 216
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
Gain & Power vs. Supply Voltage @ 8 GHz
34 GAIN (dB), P1dB (dBm), Psat(dBm) 32 30 28 26 24 22 20 6.5
Gain & Power vs. Supply Current @ 8 GHz
34 32 30 28 26 24 22 20 520 GAIN (dB), P1dB (dBm), Psat(dBm)
1
AMPLIFIERS - CHIP
1 - 217
Gain P1dB Psat
Gain P1dB Psat
7 Vdd SUPPLY VOLTAGE (Vdc)
7.5
620
720
820
Idd SUPPLY CURRENT (mA)
Reverse Isolation vs. Temperature, 7V @ 820 mA
0 -10 -20 ISOLATION (dB) -30 -40 -50 -60 -70 -80 6 6.5 7 7.5 8 8.5 9 9.5 10 FREQUENCY (GHz)
+25C +85C -55C
Power Dissipation
6 5.75 POWER DISSIPATION (W) 5.5 5.25 5 4.75 4.5 4.25 4 3.75 3.5 3.25 3 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14
6GHz 7GHz 8GHz 9GHZ 10GHz
INPUT POWER (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
Typical Supply Current vs. Vdd
Vdd (V) +6.5 +7.0 +7.5 Idd (mA) 824 820 815
1
AMPLIFIERS - CHIP
Absolute Maximum Ratings
Drain Bias Voltage (Vdd) Gate Bias Voltage (Vgg) RF Input Power (RFin)(Vdd = +7.0 Vdc) Channel Temperature Continuous Pdiss (T= 85 C) (derate 67 mW/C above 85 C) Thermal Resistance (channel to die bottom) Storage Temperature Operating Temperature +8 Vdc -2.0 to 0 Vdc +12 dBm 175 C 6.0 W 14.9 C/W -65 to +150 C -55 to +85 C
Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 820 mA at +7.0V
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Die Packaging Information [1]
Standard GP-1 Alternate [2]
[1] Refer to the "Packaging Information" section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation.
NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004" 3. TYPICAL BOND PAD IS .004" SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. 8. OVERALL DIE SIZE .002
1 - 218
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
Pad Descriptions
Pad Number 1 Function RFIN Description This pad is AC coupled and matched to 50 Ohms. Interface Schematic
1
Gate control for amplifier. Adjust to achieve Idd of 820 mA. Please follow "MMIC Amplifier Biasing Procedure" Application Note. External bypass capacitors of 100 pF and 0.1 F are required.
2
Vgg
3-5
Vdd 1-3
Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 F are required.
6
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
1 - 219
AMPLIFIERS - CHIP
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
1
AMPLIFIERS - CHIP
Assembly Diagram
1 - 220
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC590
v01.0107
GaAs PHEMT MMIC 1 WATT POWER AMPLIFIER, 6.0 - 10.0 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). Microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
1
AMPLIFIERS - CHIP
1 - 221
RF Ground Plane
0.127mm (0.005") Thick Alumina Thin Film Substrate Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pickup.
0.102mm (0.004") Thick GaAs MMIC
Wire Bond 0.076mm (0.003")
RF Ground Plane
0.150mm (0.005") Thick Moly Tab 0.254mm (0.010") Thick Alumina Thin Film Substrate Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

▲Up To Search▲

Price & Availability of HMC590

	To Download HMC590 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .