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SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
SCBS119B - JUNE 1990 - REVISED NOVEMBER 1993
* * * *
State-of-the-Art BiCMOS Design Significantly Reduces ICCZ ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required Packaged in Plastic Small-Outline (DW) Package
DW PACKAGE (TOP VIEW)
description
The SN74BCT2410 is a noninverting 11-bit buffer/line driver specifically designed to drive MOS DRAMs of up to 4 megabits. It is also suitable for use with wide data paths or buses carrying parity. The outputs, which are designed to source 1 mA and sink 12 mA, include 33- series resistors to reduce overshoot and undershoot.
A1 A2 A3 A4 A5 OE1 VCC GND OE2 Y5 Y4 Y3 Y2 Y1
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A6 A7 A8 A9 A10 A11 GND GND Y11 Y10 Y9 Y8 Y7 Y6
The output-enable (OE1 and OE2) inputs are routed internally to a two-input AND gate with active-low inputs. When both OE1 and OE2 are low, the Y outputs are active (high or low logic level). When either OE1 or OE2 is high, the Y outputs are in the high-impedance state. The multiple ground pins of the SN74BCT2410 reduce switching noise for more reliable system operation. The SN74BCT2410 is characterized for operation from 0C to 70C.
FUNCTION TABLE INPUTS OE1 L L X H OE2 L L H X A L H X X OUTPUT Y L H Z Z
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright (c) 1993, Texas Instruments Incorporated
POST OFFICE BOX 655303
* DALLAS, TEXAS 75265
1
SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
SCBS119B - JUNE 1990 - REVISED NOVEMBER 1993
logic symbol
OE1 OE2 1 2 3 4 5 28 27 26 25 24 23 14 13 12 11 10 15 16 17 18 19 20 6 9 & EN
logic diagram (positive logic)
OE1 OE2 6 9
A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11
Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y10 Y11
A1
1
14
Y1
To Ten Other Channels
This symbol is in accordance with ANSI/IEEE Std 91-1984 and IEC Publication 617-12.
schematic of each output
VCC
Output
GND
2
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* DALLAS, TEXAS 75265
SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
SCBS119B - JUNE 1990 - REVISED NOVEMBER 1993
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.5 V to 7 V Input voltage range, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.5 V to 7 V Voltage range applied to any output in the disabled or power-off state, VO . . . . . . . . . . . . . . . - 0.5 V to 5.5 V Voltage range applied to any output in the high state, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.5 V to VCC Input clamp current, IIK (VI < 0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 30 mA Current into any output in the low state, IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 mA Operating free-air temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65C to 150C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability NOTE 1: The input negative-voltage rating may be exceeded if the input clamp-current rating is observed.
recommended operating conditions (see Note 2)
MIN VCC VIH VIL IIK IOH IOL Supply voltage High-level input voltage Low-level input voltage Input clamp current High-level output current Low-level output current 0 4.5 2 0.8 -18 -12 12 70 NOM 5 MAX 5.5 UNIT V V V mA mA mA C
TA Operating free-air temperature NOTE 2: Unused or floating inputs must be held high or low.
electrical characteristics over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER VIK VOH VOL II IIH IIL IOZH IOZL IO ICCL ICCH ICCZ Ci VCC = 4.5 V, VCC = 4 5 V 4.5 VCC = 4.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5.5 V, VCC = 5 V, VCC = 5 V, TEST CONDITIONS II = -18 mA IOH = - 3 mA IOH = - 12 mA IOL = 12 mA VI = 5.5 V VI = 2.7 V VI = 0.5 V VO = 2.7 V VO = 0.5 V VO = 2.25 V VO = 0 VO = 0 VO = 0 VI = 2.5 V or 0.5 V 6 10 - 15 MIN 2.5 2 TYP 3.5 3.1 0.42 0.8 0.1 20 - 0.1 50 - 50 -70 40 40 6.5 MAX -1.2 UNIT V V V mA A mA A A mA mA mA mA pF pF
Co VO = 2.5 V or 0.5 V All typical values are at VCC = 5 V, TA = 25C. Not more than one output should be tested at a time, and the duration of the test should not exceed one second.
POST OFFICE BOX 655303
* DALLAS, TEXAS 75265
3
SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
SCBS119B - JUNE 1990 - REVISED NOVEMBER 1993
switching characteristics over recommended ranges of supply voltage and operating free-air temperature, CL = 50 pF (unless otherwise noted) (see Note 3)
PARAMETER tPLH tPHL tPZH tPZL tPHZ tPLZ FROM (INPUT) A TO (OUTPUT) Y Y Y VCC = 5 V, TA = 25C MIN 2 2.3 4.5 2 3.4 5.3 TYP 4.9 5.6 10.3 11.4 7 9.2 MAX 6.5 7.5 13 16 9.5 11.5 2 2.3 4.5 2 3.4 5.3 8.5 8.5 16.5 19 12 13.5 ns ns ns MIN MAX UNIT
OE OE
NOTE 3: Load circuits and voltage waveforms are shown in Section 1.
4
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* DALLAS, TEXAS 75265
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Copyright (c) 1998, Texas Instruments Incorporated

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