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| SBH92314x FSAN BIDITM Transceiver Optical Module for ATM-PON OLT Applications, 1550 nm Emitting-/1300 nm Receiving Function, High Power DFB-Laser, InGaAs/InP-PIN Photodiode * Designed for applications in passive-optical networks according FSAN, ITU-G.983 * Suitable for OLT applications, 155 Mbit/s and 622 Mbit/s downstream bitrate, Class B and Class C * Uncooled 1550 nm DFB Laser Diode with MultiQuantum Well structure * Ternary Moniordiode at rear laser mirror for monitoring and control of radiant power * Integrated Wavelength Division Multiplexer * InGaAs/InP-PIN-photodiode with 1550 nm blocking filter * Hermetically sealed subcomponents, similar to TO 18 * With singlemode fiber pigtail Maximum Ratings Output power ratings refer to the optical port. The operating temperature of the submount is identical to the case temperature Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Symbol Value - 20 ... + 70 - 40 ... + 85 260 Unit C C C TC Tstg TS Laser Diode Direct forward current Radiant power CW Reverse Voltage Symbol Value 120 4 2 Unit mA mW V IF max Popt max VR max Siemens Semiconductors page(1/5) 1998-08-21 SBH92314x FSAN Monitor Diode Reverse Voltage Forward Current Symbol Value 10 2 Unit V mA VR max IF max PIN Photodiode Forward current Reverse voltage Maximum optical power into the optical port Symbol Value 2 10 3 Unit mA V mW IF max VR Pport max Characteristics: All optical data refer to the optical port at - 20 to + 70 C Package-Temperature. Laser Diode Optical output power (average) Optical output power (peak) Emission wavelength center of range (Popt = 1 mW) Side mode suppression ratio (Popt = 1 mW) Threshold current Forward voltage (Popt = 1 mW) Radiant power at Ith Slope efficiency Variation of 1st derivative of P/I (0.1 to 2.0 mW) Differential series resistance (Popt = 1 mW) Rise and fall time (10% - 90%) Temperature coefficient of wavelength Symbol Min 1 2 1480 - 2 - - 35 - 30 - - - Max - - 1580 30 55 1.5 50 150 30 8 0.5 0.1 Unit mW mW nm dB mA V W mW/A % ns nm/K Popt av Popt peak SMSR Ith VF Pth S dP/dI rS tr, tf TC Siemens Semiconductors page(2/5) 1998-08-21 SBH92314x FSAN Monitor-Diode Dark current, VR = 5 V, Popt = 0 Photocurrent, Popt = 1 mW Capacitance, VR = 5 V, f = 1 MHz Tracking error, VR = 5 V, (see note 1) Symbol Min - 100 - -1 Max 0.5 1000 10 1 Unit A A pF dB IR IP C5 TE Receiver-Diode Spectral sensitivity = 1310 nm, VR = 5 V Rise and fall time (10% - 90%) RL = 50 , VR = 5 V, = 1310 nm, Popt = 100 W Total capacitance VR = 5 V, f = 1 MHz Dark current VR = 5 V, Popt = 0 Symbol Min 0.65 - Max 1.0 0.5 Unit A/W ns S1310 tr; tf C2 ID - - 1.5 50 pF nA Module Optical Crosstalk (see note 2) Backreflection (Return Loss) @ in = 1310nm Symbol CRT - Value < - 47 < - 20 Unit dB dB Note 1: The tracking error TE is the variation rate of Popt at constant current Imon over a specified temperature range and relative to the reference point: Imon,ref = Imon (T = 25 C, Popt = 1 mW). Thus, TE is given by: TE [dB ] = 10 x log Popt[Tc ]- Popt [25C ] Popt [25C ] Siemens Semiconductors page(3/5) 1998-08-21 SBH92314x FSAN Note 2: Optical Crosstalk is defined as CRT = 10 x log(P2/P1) with: P1 = Popt =1 mW with no optical input power Pport and P2 the necessary optical input power Pport at = 1300 nm to get for Popt = 0 the same receiver signal level as before (VR = 2 V). Accompanying Information T = 25 C: T = 70 C: Threshold current, slope eficiency, monitor current for 1 mW output power, peak wavelength for 1 mW output power. Threshold current, slope efficiency Pigtail Fiber Pigtail, Single Mode, Silica Mode field diameter Cladding diameter Mode field/cladding concentricity error Cladding non-circularity Mode field non-circularity Cut-off wavelength Jacket diameter Bending radius Tensile strength fiber/case Length Min 8 123 - - - 1250 0.8 30 5 0.8 Max 10 127 1 2 6 - 1.0 - - 1.2 Unit m m m % % nm mm mm N m Connector all standard connectors like FC/PC, SC, SC APC, available Siemens Semiconductors page(4/5) 1998-08-21 SBH92314x FSAN Schematic Package Outline and Pinning: BIDI Pigtail 1 4 3 2 1 3 2 Receiver Transmitter Transmitter 1 LK 2 Case 3 MK, LA 4 MA Receiver 1 Photodiode K 2 Gnd, Case 3 Photodiode A Siemens Semiconductors page(5/5) 1998-08-21 |
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