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| SemiWell Semiconductor SBF13007 High Voltage Fast-Switching NPN Power Transistor Features - Very High Switching Speed (Typical 60ns@5.0A) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 390mV@5.0A/1.0A) - Wide Reverse Bias S.O.A Symbol 2.Collector 1.Base 3.Emitter General Description This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power supply. TO-220F 1 2 3 Absolute Maximum Ratings Symbol VCES VCEO VEBO IC ICM IB IBM PC TSTG TJ Parameter Collector-Emitter Voltage ( VBE = 0 ) Collector-Emitter Voltage ( IB = 0 ) Emitter-Base Voltage ( IC = 0 ) Collector Current Collector Peak Current ( tP 5 ms ) Base Current Base Peak Current ( tP 5 ms ) Total Dissipation at TC = 25 C Storage Temperature Max. Operating Junction Temperature Value 700 400 9.0 8.0 16 4.0 8.0 36 - 65 ~ 150 150 Units V V V A A A A W C C Thermal Characteristics Symbol RJC Parameter Thermal Resistance, Junction-to-Case Value 3.47 Units C/W Oct, 2002. Rev. 2 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved 1/6 SBF13007 Electrical Characteristics Symbol ICEV VCEO(sus) ( TC = 25 C unless otherwise noted ) Parameter Collector Cut-off Current ( VBE = - 1.5V ) Collector-Emitter Sustaining Voltage ( IB = 0 ) Condition VCE = 700V VCE = 700V IC = 10 mA IC = 2.0A IC = 5.0A IC = 8.0A IC = 5.0A IB = 0.4A IB = 1.0A IB = 2.0A IB = 1.0A TC = 100 C IB = 0.4A IB = 1.0A IB = 1.0A TC = 100 C VCE = 5V VCE = 5V VCC = 125V IB2 = - 1.0A TC = 100 C Min - Typ - Max 1.0 5.0 - Units mA 400 - V VCE(sat) Collector-Emitter Saturation Voltage - - 0.5 1.0 2.5 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC = 2.0A IC = 5.0A IC = 5.0A - - 1.2 1.6 1.5 V hFE DC Current Gain Resistive Load Storage Time Fall Time Inductive Load Storage Time Fall Time Inductive Load Storage Time Fall Time IC = 2.0A IC = 5.0A IC = 5.0A IB1 = 1.0A TP = 25 VCC = 15V IB1 = 1.0A LC = 0.35mH VCC = 15V IB1= 1.0A LC = 0.35mH 10 5 - 40 40 ts tf - 1.5 0.17 3.0 0.4 ts tf IC = 5.0A IB2 = -2.5A Vclamp = 300V IC = 5.0A IB2 = -2.5A Vclamp = 300V TC = 100 C - 0.8 0.06 2.0 0.12 ts tf - 1.0 0.07 3.0 0.15 Notes : Pulse Test : Pulse width 300, Duty cycle 2% 2/6 SBF13007 Fig 1. Static Characteristics 12 IB = 2000mA IB = 1600mA IB = 1200mA 8 IB = 1000mA IB = 800mA 6 IB = 600mA IB = 400mA 4 IB = 200mA 45 40 35 Fig 2. DC Current Gain 10 IC, Collector Current [A] hFE, DC Current Gain 30 25 20 15 TJ = 125 C TJ = 25 C o o Notes : 10 5 2 IB = 0mA 0 0 1 2 3 4 5 6 7 8 9 10 0 0.01 VCE = 5V VCE = 1V 0.1 1 10 VCE, Collector-Emitter Voltage [V] IC, Collector Current [A] Fig 3. Collector-Emitter Saturation Voltage 1.2 10 1.1 Fig 4. Base-Emitter Saturation Voltage VCE, Collector-Emitter Voltage [V] VBE, Base-Emitter Voltage [V] 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.1 TJ = 25 C o 1 TJ = 125 C o 0.1 TJ = 125 C Note : hFE = 5 o TJ = 25 C 0.01 0.1 1 o Note : hFE = 5 10 1 10 IC, Collector Current [A] IC, Collector Current [A] Fig 5. Resistive Load Fall Time 1000 10 Fig 6. Resistive Load Storage Time TJ = 25 C o Notes : VCC = 125V hFE = 5 IB1 = - IB2 t, Time [ns] t, Time [us] 100 TJ = 25 C o Notes : VCC = 125V hFE = 5 IB1 = - IB2 10 1 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 IC, Collector Current [A] IC, Collector Current [A] 3/6 SBF13007 Fig 7. Safe Operation Areas 10 Fig 8. Reverse Biased Safe Operation Areas Notes : TJ 100 C IB1 = 2 A RBB = 0 LC = 0.2mH 10 1 10 s 8 IC, Collector Current [A] 100 s 10 0 IC, Collector Current [A] 6 VBE(off) -5V 4 DC 500 s 10 -1 -3V -1.5V Single Pulse 10 -2 1ms 2 10 0 10 1 10 2 10 3 0 100 200 300 400 500 600 700 800 VCE, Collector-Emitter Clamp Voltage [V] VCE, Collector-Emitter Clamp Voltage [V] Fig 9. Power Derating Curve 125 Power Derating Factor (%) 100 75 50 25 0 0 50 100 150 o 200 TC, Case Temperature ( C) 4/6 SBF13007 Inductive Load Switching & RBSOA Test Circuit LC IB1 IC IB VCE D.U.T RBB VBE(off) VClamp VCC Resistive Load Switching Test Circuit RC IB1 IC IB VCE D.U.T RBB VBE(off) VCC 5/6 |
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