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| NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm WDFN Package Features http://onsemi.com MOSFET V(BR)DSS RDS(on) MAX 70 mW @ 4.5 V 30 V 90 mW @ 2.5 V 125 mW @ 1.8 V 250 mW @ 1.5 V 4.6 A ID MAX (Note 1) * WDFN Package Provides Exposed Drain Pad for Excellent Thermal * * * * * Conduction Co-Packaged MOSFET and Schottky For Easy Circuit Layout RDS(on) Rated at Low VGS(on) Levels, VGS = 1.5 V Low Profile (< 0.8 mm) for Easy Fit in Thin Environments Low VF Schottky This is a Pb-Free Device SCHOTTKY DIODE VR MAX 30 V VF TYP 0.47 V IF MAX 2.0 A Applications * DC-DC Converters * Li-Ion Battery Applications in Cell Phones, PDA's, Media Players * Color Display and Camera Flash Regulators MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t5s Power Dissipation (Note 1) Steady State t5s Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TJ = 25C Steady State TJ = 85C TJ = 25C tp = 10 ms PD IDM TJ, TSTG IS TL ID TJ = 25C TJ = 85C TJ = 25C PD TJ = 25C 2.3 2.5 1.8 0.71 20 -55 to 150 2.4 260 A C A C A Symbol VDSS VGS ID Value 30 8.0 3.7 2.7 4.6 1.5 W Unit V V A G D A S N-CHANNEL MOSFET K SCHOTTKY DIODE MARKING DIAGRAM 1 WDFN6 CASE 506AN 1 6 2 JLMG 5 3 4 G JL = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTIONS K 1 2 D D 3 4 S 6 5 Operating Junction and Storage Temperature Source Current (Body Diode) (Note 2) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) A N/C K G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. (c) Semiconductor Components Industries, LLC, 2006 1 May, 2006 - Rev. 3 Publication Order Number: NTLJF4156N/D NTLJF4156N SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Peak Repetitive Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Symbol VRRM VR IF Value 30 30 2.0 Unit V V A THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 3) Junction-to-Ambient - t 5 s (Note 3) Junction-to-Ambient - Steady State Min Pad (Note 4) Symbol RqJA RqJA RqJA Max 83 54 180 C/W Unit 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz. Cu. MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, Ref to 25C TJ = 25C TJ = 85C 30 18.1 1.0 10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit VDS = 24 V, VGS = 0 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On-Resistance IGSS VDS = 0 V, VGS = 8.0 V VGS(TH) VGS(TH)/TJ RDS(on) VGS = VDS, ID = 250 mA 0.4 0.7 2.8 1.0 V mV/C VGS = 4.5, ID = 2.0 A VGS = 2.5, ID = 2.0 A VGS = 1.8, ID = 1.8 A VGS = 1.5, ID = 1.5 A 47 56 88 133 4.5 70 90 125 250 mW Forward Transconductance gFS VDS = 10 V, ID = 2.0 A S CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance CISS COSS CRSS QG(TOT) QG(TH) QGS QGD RG VGS = 4.5 V, VDS = 15 V, ID = 2.0 A VGS = 0 V, f = 1.0 MHz, VDS = 15 V 427 51 32 5.4 0.5 0.8 1.24 3.7 W 6.5 nC pF 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTLJF4156N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 15 V, ID = 2.0 A, RG = 2.0 W 4.8 9.2 14.2 1.7 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Recovery Voltage VSD VGS = 0 V, IS = 2.0 A TJ = 25C TJ = 125C 0.78 0.62 10.5 VGS = 0 V, dISD/dt = 100 A/ms, IS = 2.0 A 7.6 2.9 5.0 nC ns 1.2 V Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Time tRR ta tb QRR 5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 30 V VR = 20 V VR = 10 A Min Typ 0.34 0.47 17 3.0 2.0 Max 0.39 0.53 20 8.0 4.5 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 85C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Min Typ 0.22 0.40 0.22 0.11 0.06 Max 0.35 0.50 2.5 1.6 1.2 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 125C unless otherwise noted) Parameter Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current Symbol VF IR Test Conditions IF = 0.1 A IF = 1.0 A VR = 30 V VR = 20 V VR = 10 V Min Typ 0.2 0.4 2.0 1.1 0.63 Max 0.29 0.47 20 10.9 8.4 mA Unit V SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Capacitance Symbol C Test Conditions VR = 5.0 V, f = 1.0 MHz Min Typ 38 Max Unit pF 7. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). 8. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm2, 2 oz cu. 9. Pulse Test: pulse width v 300 ms, duty cycle v2%. 10. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTLJF4156N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 5 ID, DRAIN CURRENT (AMPS) VGS = 1.7 V to 8 V TJ = 25C ID, DRAIN CURRENT (AMPS) 1.6 V 4 1.5 V 6 VDS 10 V 4 3 2 1.4 V 1.3 V 1.2 V 2 TJ = 25C 1 0 0 1 2 3 4 TJ = 100C 0 TJ = -55C 0 0.5 1 1.5 2 2.5 3 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.07 VGS = 4.5 V 0.06 TJ = 100C 0.14 0.13 0.12 0.11 0.1 0.09 0.08 0.07 0.06 0.05 0.04 1 2 VGS = 4.5 V 3 4 5 VGS = 2.5 V VGS = 1.8 V TJ = 25C 0.05 TJ = 25C 0.04 TJ = -55C 0.03 0.02 1.0 1.5 2.0 2.5 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance versus Drain Current Figure 4. On-Resistance versus Drain Current and Gate Voltage 100,000 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 ID = 2 A VGS = 4.5 V 1.4 VGS = 0 V 10,000 TJ = 150C 1000 TJ = 100C 100 1.2 1.0 0.8 0.6 -50 IDSS, LEAKAGE (nA) -25 0 25 50 75 100 125 150 10 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 4 NTLJF4156N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VDS = VGS = 0 V TJ = 25C VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5 QT 4 VDS VGS 18 15 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1000 C, CAPACITANCE (pF) 800 600 12 3 9 2 QGS QGD 6 1 0 0 1 ID = 2.0 A TJ = 25C 2 3 4 5 QG, TOTAL GATE CHARGE (nC) 6 3 0 Ciss 400 200 0 5 VGS 0 VDS 5 10 15 20 25 30 Crss Coss GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDD = 15 V ID = 2.0 A VGS = 4.5 V t, TIME (ns) 100 td(off) tf tr 10 td(on) Figure 8. Gate-To-Source and Drain-To-Source Voltage versus Total Charge 3 VGS = 0 V TJ = 150C 2 TJ = 25C TJ = 125C 1 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0 0.3 0.6 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 0.9 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current 100 -ID, DRAIN CURRENT (AMPS) SINGLE PULSE TC = 25C TJ = 150C See Note 2 on Page 1 10 ms 100 ms 1 1 ms 10 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 dc 10 0.01 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 5 NTLJF4156N TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1000 EFFECTIVE TRANSIENT THERMAL RESISTANCE 100 D = 0.5 0.2 0.1 0.05 10 0.02 1 0.01 *See Note 2 on Page 1 P(pk) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.001 0.1 0.01 t, TIME (S) 1 0.1 0.000001 0.00001 0.0001 10 100 1000 Figure 12. Thermal Response http://onsemi.com 6 NTLJF4156N TYPICAL SCHOTTKY PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) IF , INSTANTANEOUS FORWARD CURRENT (AMPS 10 1.0 TJ = 85C TJ = 125C TJ = 25C TJ = -55C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ = 85C TJ = 125C 0.1 0.1 0.2 0.3 0.4 TJ = 25C 0.5 0.6 0.7 0.8 0.9 0.1 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 13. Typical Forward Voltage Figure 14. Maximum Forward Voltage I R , REVERSE CURRENT (AMPS) 100E-3 10E-3 TJ = 125C TJ = 85C I R , MAXIMUM REVERSE CURRENT (AMPS) 1.0E+0 1.0E+0 100E-3 10E-3 TJ = 125C 1.0E-3 1.0E-3 TJ = 85C 100E-6 10E-6 100E-6 10E-6 TJ = 25C TJ = 25C 1.0E-6 0 10 20 1.0E-6 0 10 20 30 100E-9 30 100E-9 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 15. Typical Reverse Current Figure 16. Maximum Reverse Current ORDERING INFORMATION Device NTLJF4156NT1G Package WDFN6 (Pb-Free) Shipping 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NTLJF4156N PACKAGE DIMENSIONS WDFN6, 2x2 CASE 506AN-01 ISSUE B D A B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.20mm FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L J MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 0.57 0.77 2.00 BSC 0.90 1.10 0.65 BSC 0.25 REF 0.30 0.20 0.15 REF PIN ONE REFERENCE E 2X 0.10 C 2X 0.10 C 0.10 C 6X 0.08 C D2 6X L 1 3 6X K mCool is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. III III III A3 A1 D2 e 2X E2 6 4 A C SEATING PLANE 6X SOLDERMASK DEFINED MOUNTING FOOTPRINT* 2.30 6X 0.35 4X 0.43 1 0.65 PITCH b 6X 0.25 B 2X 6X J 0.10 C A 0.05 C BOTTOM VIEW NOTE 3 0.72 1.05 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 NTLJF4156N/D |
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