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 E2Q0033-38-72 electronic components
This version: Jul. 1998 Previous version: Jan. 1998 KGF1631
electronic components KGF1631
Power FET (Plastic Package Type)
GENERAL DESCRIPTION
The KGF1631, housed in a SOT-89 type plastic-mold package, is a discrete GaAs power FET that features high efficiency and high output power. The KGF1631 specifications are guaranteed to a fixed matching circuit for 3.4 V and 850 MHz; external impedance-matching circuits are also required. The KGF1631 provides an output power of more than 24dBm at 3.4V, with high efficiency (50% typ.) and high gain (21dB typ.). The device is optimized for transmitter driver amplifier applications for Portable Handy Phones (PHPs) and other 3-V cellular phones. FEATURES * High output power: 24 dBm (min.) * High gain: 21dB (typ.) * High efficiency: 50% (typ.) * Specifications guaranteed to a fixed matching circuits for 3.4 V, 850 MHz * Package: 3PMMP (SOT-89 type)
PACKAGE DIMENSIONS
4.50.1 1.6 +0.15 -0.10 1.50.1
2.50.1 10.2
40.2
0.48 +0.08 -0.05 0.4 +0.08 -0.05 1.50.1 1.50.1 30.1 0.4
+0.08 -0.05
0.390.05
Package material Lead frame material Pin treatment Solder plate thickness
Epoxy resin Cu Solder plating 5 mm or more
(Unit: mm)
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electronic components
KGF1631
MARKING
(1)
D5 XX
PRODUCT TYPE
(2) LOT NUMBER (NUMERICAL or ALPHABETICAL)
(3)
(1) Gate (2) Source (3) Drain
CIRCUIT
Drain(3)
Gate(1)
Source(2)
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electronic components
KGF1631
ABSOLUTE MAXIMUM RATINGS
Item Drain-source voltage Gate-source voltage Drain current Total power dissipation Channel temperature Storage temperature Symbol VDS VGS IDS Ptot Tch Tstg Condition Ta = 25C Ta = 25C Ta = 25C Ta = Tc = 25C -- -- Unit V V A W C C Min. -- -5 -- -- -- -45 Max. 8 0.4 0.8 2 150 125
ELECTRICAL CHARACTERISTICS
(Ta = 25C) Item Gate-source leakage current Gate-drain leakage current Drain-source leakage current Drain current Gate bias Q point Output power Drain efficiency Linear gain Thermal resistance Symbol IGSS IGDO IDS(off) IDSS VGSQ PO hD GLIN Rth Condition VGS = -5 V VGD = -13 V VDS = 8 V, VGS = -5 V VDS = 1.5 V, VGS = 0 V VDS = 3.4 V, IDSQ = 70 mA (*1), PIN = 7 dBm (*1), PIN = 7 dBm (*1), PIN = 0 dBm Channel to case Unit mA mA mA mA V dBm % dB C/W Min. -- -- -- 500 -3.0 24 45 -- -- Typ. -- -- -- -- -- 24.5 50 21 40 Max. 50 500 500 -- -2.0 -- -- -- --
*1 Condition: f = 850 MHz, VDS = 3.4 V, IDSQ = 70 mA
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electronic components
KGF1631
RF CHARACTERISTICS
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electronic components
KGF1631
Typical S Parameters
VDS = 3.4V, IDS = 60mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 500.0 600.0 700.0 800.0 900.0 1000.0 1100.0 1200.0 1300.0 1400.0 1500.0 1600.0 1700.0 1800.0 1900.0 2000.0 2100.0 2200.0 2300.0 2400.0 2500.0 2600.0 2700.0 2800.0 2900.0 3000.0 0.912 0.890 0.877 0.862 0.852 0.844 0.836 0.829 0.820 0.818 0.811 0.806 0.803 0.794 0.792 0.783 0.781 0.774 0.769 0.764 0.757 0.753 0.746 0.741 0.736 0.734 -82.96 -95.50 -105.77 -114.69 -122.49 -129.11 -135.35 -140.56 -145.56 -150.19 -154.29 -158.37 -162.27 -165.60 -169.02 -172.51 -175.43 -178.78 178.27 175.35 172.17 169.62 166.72 164.19 161.65 159.07 5.291 5.203 4.901 4.748 4.402 4.185 3.952 3.727 3.526 3.325 3.162 3.008 2.860 2.727 2.626 2.499 2.420 2.316 2.242 2.159 2.083 2.024 1.951 1.897 1.827 1.778 125.03 117.02 109.97 103.99 98.78 93.87 89.28 85.04 81.18 77.31 73.59 70.23 66.68 63.99 60.15 57.37 54.00 50.98 47.99 44.96 42.18 39.18 36.14 33.39 30.30 28.02 0.051 0.055 0.059 0.062 0.064 0.067 0.069 0.071 0.072 0.074 0.075 0.077 0.078 0.079 0.081 0.082 0.083 0.084 0.086 0.087 0.089 0.089 0.091 0.092 0.094 0.093 45.92 40.96 36.59 33.33 30.12 27.58 25.41 23.21 21.66 19.64 18.31 16.52 15.41 13.93 12.77 11.31 10.49 8.76 7.84 6.58 5.47 4.46 3.18 1.83 0.39 -0.72 0.293 0.318 0.339 0.350 0.363 0.368 0.375 0.378 0.383 0.385 0.385 0.387 0.387 0.388 0.386 0.386 0.386 0.385 0.383 0.383 0.381 0.379 0.377 0.377 0.376 0.377 -139.69 -145.24 -149.01 -152.49 -155.70 -158.02 -160.24 -162.50 -164.25 -166.00 -167.91 -169.46 -171.06 -172.92 -174.22 -175.82 -177.63 -178.86 179.19 177.94 176.06 174.75 173.09 171.74 169.90 168.25
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electronic components
KGF1631
Typical S Parameters
VDS = 3.4 V, IDS = 60 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W
j1.0 j0.5 j2.0 135 0.5 45 90 S21
j0.2 3.0
j5.0
0.5 3.0
3.0 S22 0.5 180
5.0 4.0 3.0 2.0 1.0 0.02 0.04 0.06
S12
0.08
0.10
3.0 0
S11
0.5 0.0 0.2 0.5 1.0 2.0 5.0
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