 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| K827P/K847P Multichannel Optocoupler with Phototransistor Output Description The K827P and K847P consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. 95 10534 95 10828 Applications Galvanically separated circuits, non-interacting switches Features D D D D K827P includes 2 isolator channels K847P includes 4 isolator channels DC isolation test voltage VIO = 2.5 kV Low coupling capacitance of typical 0.3 pF D D D D Current Transfer Ratio (CTR) of typical 100% Low temperature coefficient of CTR Wide ambient temperature range UL recognized; file No. E 76222 Pin Connection 8 7 6 5 16 15 14 13 12 11 10 9 1 2 K827P 3 95 10816 4 1 2 3 K847P 4 5 6 7 8 TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 1 (9) 95 10817 K827P/K847P Absolute Maximum Ratings For single coupled system Input (Emitter) Parameters Reverse voltage Forward current Forward surge current Power dissipation Junction temperature Test Conditions Symbol VR IF IFSM Pv Tj Value 6 60 1.5 100 125 Unit V mA A mW C tp 10 ms Tamb 25C Output (Detector) Parameters Collector emitter voltage Emitter collector voltage Collector current Peak collector current Power dissipation Junction temperature Test Conditions Symbol VCEO VECO IC ICM Pv Tj Value 70 7 50 100 150 125 Unit V V mA mA mW C tp/T = 0.5, tp 10 ms Tamb 25C Coupler Parameters DC Isolation test voltage Total power dissipation Ambient temperature range Storage temperature range Soldering temperature 1) Test Conditions Tamb 25C 2 mm from case, t 10 s Symbol VIO1) Ptot Tamb Tstg Tsd Value 2.5 250 -40 to +100 -55 to +125 260 Unit kV mW C C C Related to standard climate 23/50 DIN 50014 2 (9) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 K827P/K847P Electrical Characteristics For single coupled system, Tamb = 25C Input (Emitter) Parameters Forward voltage Breakdown voltage Test Conditions IF = 50 mA IR = 100 mA Symbol VF V(BR) Min. 5 Typ. 1.25 Max. 1.6 Unit V V Output (Detector) Parameters Collector emitter breakdown voltage Emitter collector breakdown voltage Collector dark current Test Conditions IC = 1 mA IE = 100 mA VCE = 20 V, IF = 0, E=0 Symbol V(BR)CEO V(BR)ECO ICEO Min. 70 7 100 Typ. Max. Unit V V nA Coupler Parameters DC isolation test voltage Isolation resistance Collector current IC/IF Collector emitter saturation voltage Cut-off frequency Coupling capacitance 1) Test Conditions t=2s VIO = 1000 V, 40% rel. humidity IF = 5 mA, VCE = 5 V IF = 10 mA, VCE = 5 V IF = 5 mA, VCE = 5 V IF = 10 mA, IC = 1 mA IF = 10 mA, VCE = 5 V, RL = 100 W f = 1 MHz Symbol VIO1) RIO1) IC IC CTR VCEsat fc Ck Min. 2.5 1010 2.5 6 0.5 Typ. 1012 5 12 1 Max. Unit kV W 30 6 0.3 mA mA V kHz pF 100 0.3 Related to standard climate 23/50 DIN 50014 TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 3 (9) K827P/K847P Switching Characteristics (Typical Values) VS = 5 V Type K827P/ K847P td[ms] 3.0 tr[ms] 3.0 RL = 100 W (see figure 1) RL = 1 kW (see figure 2) ton[ms] ts[ms] tf[ms] toff[ms] IC[mA] ton[ms] toff[ms] IF[mA] 6.0 0.3 4.7 5.0 2 9 18 10 IF 0 R G = 50 W tp T = 0.01 IF +5V IC = 2 mA ; Adjusted through input amplitude tp = 50 ms Channel I Oscilloscope Channel II 50 W 100 R L = 1 MW C L = 20 pF W 95 10804 Figure 1. Test circuit, non-saturated operation IF 0 R G = 50 W tp T = 0.01 IF = 10 mA +5V IC tp = 50 ms Channel I Oscilloscope Channel II 50 W 1 kW RL CL w 1 MW v 20 pF 95 10843 Figure 2. Test circuit, saturated operation 4 (9) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 K827P/K847P Typical Characteristics (Tamb = 25C, unless otherwise specified) 300 P tot - Total Power Dissipation ( mW ) Coupled device 250 200 Phototransistor 10000 ICEO- Collector Dark Current, with open Base ( nA ) VCE=20V IF=0 1000 150 IR-diode 100 50 0 0 40 80 120 100 10 1 0 95 11026 25 50 75 100 96 11700 Tamb - Ambient Temperature ( C ) Tamb - Ambient Temperature ( C ) Figure 3. Total Power Dissipation vs. Ambient Temperature 1000.0 Figure 6. Collector Dark Current vs. Ambient Temperature 100 IC - Collector Current ( mA ) VCE=5V 10 I F - Forward Current ( mA ) 100.0 10.0 1 1.0 0.1 0.1 0 96 11862 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage ( V ) 95 11027 0.1 1 10 100 IF - Forward Current ( mA ) Figure 4. Forward Current vs. Forward Voltage CTR rel - Relative Current Transfer Ratio 2.0 IC - Collector Current ( mA ) VCE=5V IF=5mA 1.5 Figure 7. Collector Current vs. Forward Current 100 20mA IF=50mA 10 10mA 5mA 1.0 1 2mA 1mA 0.5 0 -25 95 11025 0.1 0 25 50 75 95 10985 0.1 1 10 100 Tamb - Ambient Temperature ( C ) VCE - Collector Emitter Voltage ( V ) Figure 5. Rel. Current Transfer Ratio vs. Ambient Temperature Figure 8. Collector Current vs. Collector Emitter Voltage TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 5 (9) K827P/K847P Typical Characteristics (Tamb = 25C, unless otherwise specified) V CEsat - Collector Emitter Saturation Voltage ( V ) 20% 0.8 CTR=50% 0.6 t on / t off - Turn on / Turn off Time ( m s ) 1.0 50 Saturated Operation VS=5V RL=1kW 40 30 toff 20 10 0 ton 0 5 10 15 20 0.4 0.2 0 1 10 IC - Collector Current ( mA ) 100 10% 95 11028 95 11031 IF - Forward Current ( mA ) Figure 9. Collector Emitter Sat. Voltage vs. Collector Current 1000 CTR - Current Transfer Ratio ( % ) VCE=5V 100 Figure 11. Turn on / off Time vs. Forward Current 10 Non Saturated Operation VS=5V RL=100W t on / t off - Turn on / Turn off Time ( m s ) 8 ton 6 toff 4 2 0 10 1 0.1 95 11029 1 10 100 95 11030 0 2 4 6 10 IF - Forward Current ( mA ) IC - Collector Current ( mA ) Figure 10. Current Transfer Ratio vs. Forward Current Figure 12. Turn on / off Time vs. Collector Current 6 (9) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 K827P/K847P Dimensions of K847P in mm 20.0 max. 1.5 19.8 max. 7.72 7.52 4.8 4.2 3.7 3.5 3.3 0.35 0.25 9.4 8.6 2.54 17.78 16 15 14 13 1.54 0.58 0.48 12 11 10 9 6.4 6.2 95 10950 technical drawings according to DIN specifications 1 2 3 4 5 6 7 8 TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 7 (9) K827P/K847P Dimensions of K827P in mm 9.8 9.5 9.6 9.4 1.5 7.72 7.52 4.8 4.2 3.7 3.5 3.3 0.35 0.25 9.4 8.6 0.58 0.48 1.54 2.54 7.62 8 7 6 5 95 10949 6.4 6.2 technical drawings according to DIN specifications 1 2 3 4 8 (9) TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 K827P/K847P Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A1, 13-Jun-96 9 (9) |
Price & Availability of K827P47P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |