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| HZM6.8FA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-442A(Z) Rev 1 September 1996 Features * * HZM6.8FA has four devices, and can absorb external + and -surge. MPAK-5 Package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.8FA Laser Mark 68A Package Code MPAK-5 Outline 1 2 1 Cathode 2 Cathode 3 Cathode 5 4 3 4 Anode 5 Cathode (Top View) HZM6.8FA Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Note Symbol Pd *1 Tj Tstg Value 200 150 -55 to +150 Unit mW C C 1. Four device total, With P.C board. Electrical Characteristics (Ta = 25C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability Symbol VZ IR C rd Min 6.47 Typ Max 7.0 2 130 30 Unit V A pF kV Test Condition IZ = 5 mA, 40ms pulse VR = 3.5V VR = 0V, f = 1 MHz IZ = 5 mA C =150pF, R = 330 , Both forward and reverse direction 10 pulse *2 A\ A\ A\ A\ A\ A\ A\ A\ 30 A\ A\ Notes 1. Per one device. 2. Failure criterion ; IRAN2 A at VR = 3.5V. HZM6.8FA Main Characteristic HZM6.8FA Package Dimensions Unit : mm (0.95) (0.95) (0.6) 0.40.1 1 2 0.40.1 Laser Mark 0.16 0 to 0.15 0.2 2.8 + 0.3 - 0.2 1.6 + 0.1 - 68A 5 4 1.9 2.90.2 3 0.40.1 0.40.1 1 Cathode 2 Cathode 3 Cathode 4 Anode 5 Cathode Hitachi Code JEDEC Code EIAJ Code Weight (g) MPAK-5 -- -- 0.013 (0.6) 1.1 - 0.1 (0.8) + 0.2 |
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