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HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 (Z) Rev 0 Features * HZM6.2ZFA has four devices, and can absorb external + and -surge. * Low capacitance (C = 8.5pF max) and can protect ESD of signal line. * MPAK-5 package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HZM6.2ZFA Laser Mark 62Z Package Code MPAK-5 Outline HZM6.2ZFA Absolute Maximum Ratings (Ta = 25C) Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW C C 1. Four device total, See Fig.2. Electrical Characteristics (Ta = 25C) *1 Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd -- Min 5.90 -- -- -- 13 Typ -- -- 8.0 -- -- Max 6.50 3 8.5 60 -- Unit V A pF kV Test Condition I Z = 5 mA, 40ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz I Z = 5 mA C =150 pF, R = 330 , Both forward and reverse direction 10 pulse Notes: 1. Per one device. 2. Failure criterion ; IR 3 A at V R = 5.5 V. 2 HZM6.2ZFA Main Characteristic 3 HZM6.2ZFA Main Characteristic (cont) 4 HZM6.2ZFA Package Dimensions Unit : mm 5 |
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