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 HZM6.2ZFA
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-593 (Z) Rev 0 Features
* HZM6.2ZFA has four devices, and can absorb external + and -surge. * Low capacitance (C = 8.5pF max) and can protect ESD of signal line. * MPAK-5 package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HZM6.2ZFA Laser Mark 62Z Package Code MPAK-5
Outline
HZM6.2ZFA
Absolute Maximum Ratings (Ta = 25C)
Item Power dissipation Junction temperature Storage temperature Note: Symbol Pd Tj Tstg
*1
Value 200 150 -55 to +150
Unit mW C C
1. Four device total, See Fig.2.
Electrical Characteristics (Ta = 25C) *1
Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability
*2
Symbol VZ IR C rd --
Min 5.90 -- -- -- 13
Typ -- -- 8.0 -- --
Max 6.50 3 8.5 60 --
Unit V A pF kV
Test Condition I Z = 5 mA, 40ms pulse VR = 5.5 V VR = 0 V, f = 1 MHz I Z = 5 mA C =150 pF, R = 330 , Both forward and reverse direction 10 pulse
Notes: 1. Per one device. 2. Failure criterion ; IR 3 A at V R = 5.5 V.
2
HZM6.2ZFA
Main Characteristic
3
HZM6.2ZFA
Main Characteristic (cont)
4
HZM6.2ZFA
Package Dimensions
Unit : mm
5


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