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| ADE-208-319B(Z) HVM132WK Silicon Epitaxial Planar Pin Diode for Antenna Switching Rev. 2 Jan. 1996 Features * Low capacitance.(C=0.5pF max) * Low forward resistance. (rf=2.0 max) * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Outline 3 1 Ordering Information Type No. HVM132WK Laser Mark P4 Package Code MPAK (Top View) 1 Anode 2 Anode 3 Cathode Absolute Maximum Ratings (Ta = 25C) Item Peak reverse voltage Reverse voltage Forward current Power dissipation Junction temperature Storage temperature * Two device total Symbol VRM VR IF Tj Tstg * Value 65 60 100 150 125 -55 to +125 Unit V V mA mW C C Pd * Electrical Characteristics (Ta = 25C) * Item Forward voltage Reverse current Capacitance Forward resistance Symbol VF IR C rf Min -- -- -- -- Typ -- -- -- -- Max 1.0 0.1 0.5 2.0 Unit V A pF Test Condition IF = 10 mA VR = 60 V VR = 1 V , f = 1 MHz IF = 10 mA, f = 100 MHz * Do not guarantee electrical characteristics when forward bias between (1) - (3) or (2) - (3) and reverse bias between (2) - (3) or (1) - (3) at the same time and vice versa. HVM132WK 10 -2 10 -6 10 Forward current I F (A) -4 10-7 Reverse current I R (A) 0.6 0.8 10 -6 10 -8 10 -9 10-10 10 -8 10 -10 10 -11 10 -12 0 10 -12 0 0.2 0.4 1.0 20 40 60 80 100 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 10 f=1MHz 3 f=100MHz Forward resistance r f ( ) 2 10 Capacitance C (pF) 10 2 10 1.0 1.0 10 -1 10 -1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 10 10 -5 10 -4 10 -3 10 -2 Forward current I F (A) Fig.4 Forward resistance Vs. Forward current HVM132WK Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 P4 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 Anode 2 Anode 3 Cathode HITACHI Code MPAK(1) 1.1 - 0.1 + 0.2 0.3 JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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