 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HE8404SG GaAlAs Infrared Emitting Diode Description The HE8404SG is a GaAlAs double heterojunction structure 820 nm band light emitting diode. It is suitable for use as the light source in a wide range of optical control and sensing equipment. Features * High efficiency, high output Absolute Maximum Ratings (TC = 25C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Rated Value 250 3 -20 to +60 -40 to +90 Units mA V C C 242 HE8404SG Optical and Electrical Characteristics (TC = 25C) Item Optical output power Peak wavelength Spectral width Forward voltage Reverse current Capacitance Rise and fall time Symbol PO p VF IR Ct tr, tf Min 40 790 -- -- -- -- -- Typ -- 820 50 -- -- 30 10 Max -- 850 -- 2.5 100 -- -- Units mW nm nm V A pF ns Test Conditions I F = 200 mA I F = 200 mA I F = 200 mA I F = 200 mA VR = 3 V VR = 0 V, f = 1 MHz I F = 50 mA Typical Characteristic Curves 243 HE8404SG Typical Characteristic Curves (cont) 244 |
Price & Availability of HE8404SG
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |