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SF5G49,SF5J49,USF5G49,USF5J49
TOSHIBA Thyristor Silicon Planar Type
SF5G49, SF5J49, USF5G49, USF5J49
Midium Power Control Applications
Unit in mm Repetitive peak off-state voltage: VDRM = 400, 600 V Repetitive peak reverse voltage: VRRM = 400, 600 V Average on-state current: IT (AV) = 5 A Gate trigger current: IGT = 70 A max * * *
Maximum Ratings
Characteristics Repetitive peak off-state voltage and Repetitive peak reverse voltage (RGK = 330 ) Non-repetitive peak reverse voltage (non-repetitive < 5 ms, Tj = 0~125C, RGK = 330 ) Average on-state current R.M.S on-state current Peak one cycle surge on-state current (non-repetitive) I t limit value Peak gate power dissipation Average gate power dissipation Peak forward gate voltage Peak reverse gate voltage Peak forward gate current Junction temperature Storage temperature range
2
Symbol SF5G49 USF5G49 SF5J49 USF5J49 SF5G49 USF5G49 SF5J49 USF5J49 VRSM
Rating 400
Unit
VDRM VRRM
V 600 400 V 600
IT (AV) IT (RMS) ITSM It PGM PG (AV) VFGM VRGM IGM Tj Tstg
2
5 7.8 65 (50 Hz) 20 0.5 0.05 5 -5 200 -40~125 -40~125
A A A As W W V V mA C C
2
JEDEC EIAJ

SF5G49 (A) 13-7F1A SF5J49 TOSHIBA USF5G49 (B) 13-7F2A USF5J49 Weight: (A) 0.36 g (typ.) (B) 0.28 g (typ.)
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2000-07-03
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SF5G49,SF5J49,USF5G49,USF5J49
Note: Should be used with gate resistance as follows
Anode
Gate RGK = 330 or less
Cathode
Electrical Characteristics (Ta = 25C)
Characteristics Repetitive peak off-state current and Repetitive peak reverse current Peak on-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Critical rate of rise of off-state voltage Holding current Thermal resistance (junction to case) Symbol IDRM IRRM VTM VGT IGT VGD dv/dt IH Rth (j-c) Test Condition VDRM = VRRM = Rated RGK = 330 ITM = 12 A VD = 6 V, RL = 100 RGK = 330 VD = Rated x 2/3, Tc = 125C VDRM = Rated x 2/3, Tc = 75C RGK = 330 , Exponential rise RL = 100 , RGK = 330 DC Min 3 0.2 Typ. 50 2.5 Max 20 1.6 0.8 70 6.0 Unit A V V A V V/s mA C/W
Marking
1 2
1
Mark Lot Number
F5G49 F5J49
Type Name
SF5G49, USF5G49 SF5J49, USF5J49
2
Month (starting from alphabet A) Year (last decimal digit of the current year)
Transient thermal impedance (junction to case)
Transient thermal impedance rth (j-c) (C/W)
10
1
0.1 0.001
0.01
0.1
1
10
Time t (s)
2000-07-03
2/5
SF5G49,SF5J49,USF5G49,USF5J49
Surge on-state current (non-repetitive)
80
iT - vT
100
(A)
Peak surge on-state current ITSM
Instantaneous on-state current iT
(A)
Rated load
60 60 Hz 40
10
50
1 Tj = 125C 25C
20
0.1 0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
2.3
2.5
0 1
10
100
Instantaneous on-state voltage vT
(V)
Number of cycles at 50 Hz and 60 Hz
IGT (Tc)/IGT (Tc = 25C) - Tc
10
(typical)
2.0 VD = 6 V RL = 100 RGK = 330
VGT (Tc)/VGT (Tc = 25C) - Tc
(typical)
VD = 6 V RL = 100 RGK = 330
VGT (Tc)/VGT (Tc = 25C)
150
IGT (Tc)/IGT (Tc = 25C)
1.5
1
1.0
0.5
0.1 -50
0
50
100
0 -50
0
50
100
150
Case temperature Tc (C)
Case temperature Tc
(C)
IH (Tc)/IH (Tc = 25C) - Tc
2.0
(typical)
VD = 6 V ITM = 1 A RGK = 330
1.5
IH (Tc)/IH (Tc = 25C)
IH - RGK
10 1.0
(typical)
ITM = 1 A
Holding current IH (mA)
Ta = 25C 1
0.5
0 -60
-20
20
60
100
140
0.1 0.01
0.1
1
10
100
Case temperature Tc (C)
Gate to cathode resistance RGK (k)
2000-07-03
3/5
SF5G49,SF5J49,USF5G49,USF5J49
PT (AV) - IT (AV)
10 Half sine waveform 140
Tc Max - IT (AV)
Half sine waveform
Maximum allowable case temperature Tc Max (C)
Average on-state power dissipation PT (AV) (W)
180 8 0 6 = 30 4 180 90 60 120
120 100 0 180
Conduction angle
Conduction angle 80 60
40 20
2
= 30
60
90
120
180
0 0
1
2
3
4
5
6
7
0 0
1
2
3
4
5
6
7
Average on-state current IT (AV)
(A)
Average on-state current IT (AV)
(A)
PT (AV) - IT (AV)
16 140
Tc Max - IT (AV)
Full sine waveform
Average on-state power dissipation PT (AV) (W)
14 12 360 10 8 120 6 4 2 0 0 = 60 0 180 1 2 360 180 Full sine waveform 240
Maximum allowable case temperature Tc Max (C)
120 0 180 100 80 360
1 2 Conduction angle = 1 + 2
60 40 20 0 0
Conduction angle = 1 + 2 2 4 6 8 10
= 60
120 180
240
360
2
4
6
8
10
Average on-state current IT (AV)
(A)
Average on-state current IT (AV)
(A)
PT (AV) - IT (AV)
16 Rectangular waveform 140
Tc Max - IT (AV)
Rectangular waveform
Average on-state power dissipation PT (AV) (W)
14 12 10 180 8 90 6 = 30 4 2 0 0 60 120 0 360 DC
Maximum allowable case temperature Tc Max (C)
120 100 0 360
Conduction angle
Conduction angle 80
60 40 20 60 = 30 90 120 180 DC
2
4
6
8
10
0 0
2
4
6
8
10
Average on-state current IT (AV)
(A)
Average on-state current IT (AV)
(A)
2000-07-03
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SF5G49,SF5J49,USF5G49,USF5J49
10
4
dv/dt - CGK
(typical)
10 4
dv/dt - CGK
(typical)
10
3 RGK = 100
10
3 RGK = 100
Critical rate of rise of off-state voltage dv/dt (V/s)
10
2 330
Critical rate of rise of off-state voltage dv/dt (V/s)
10
2
330
10
1 1 k
10
1
1 k
10
0
3.3 k 10 VD = 400 V Ta = 75C CGK
0 3.3 k VD = 400 V Ta = 100C CGK
10-1 -3 10
RGK 10-2 10-1 10 0
10-1 -3 10
RGK 10-2 10-1 10 0
Gate to cathode capacitance CGK (F)
Gate to cathode capacitance CGK (F)
VBO (Tc)/VBO (Tc = 25C) - Tc
120
(typical)
VBO (Tc)/VBO (Tc = 25C) (%)
100
RGK = 100
80
330 1 k
60 3.3 k 40 10 k 20
0 -80
-40
0
40
80
120
160
200
Case temperature Tc (C)
2000-07-03
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