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U5ZA40C
TOSHIBA Zener Diode Silicon Diffused-Junction Type
U5ZA40C
Best Suited for Overvoltage Protection of Electronic System: Electronic System for Use in Automobiles Electronic System for Commercial Use Electronic System for Industrial Use For Communications, Controls, Measuring Instruments, etc.
* * * *
High surge power withstanding capabilities that absorb load dump surge. Excellent surge responsibility for steep surge absorption. Surface mount type is available for easy applications. Corresponds to taping packages.
Maximum Ratings (Ta = 25C)
Characteristics Allowable power dissipation (Note1) Symbol P Rating 5 Unit W IRSM
Non-repetitive peak reverse surge current (see figure 1 for the exponents.) Peak one cycle surge forward current (single half sine-wave, t = 10 ms) Junction temperature Storage temperature
IRSM
62
A
IRSM 2
IFSM Tj Tstg
700 -40~150 -40~150
A C C 0 10 ms
Figure 1
Note1: Lead tip temperature
TL = 25C
961001EAA1
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
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U5ZA40C
Electrical Characteristics (Ta = 25C)
Zener Voltage VZ [V] (IZ = 10 mA) Min U5ZA40C 36.0 Typ. 40.0 Max 44.0 Operating Resistance rd [] (IZ = 10 mA) Max 30 Temperature Coefficient T [mV/C] (IZ = 10 mA) Typ. 31 Max 49 Forward Voltage VF [V] (IF = 6 A) Max 1.2 Reverse Current IR [A] (VR = 32 V) Max 10
Type No.
Marking
Type code Lot No.
Code 40C
Type U5ZA40C
40C
Weekly code Year (last two number of the christian era)
Standard Soldering Pad
9.0 Unit: mm
11.0
3.0 11.0
5.5
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U5ZA40C
TL, Ta Max - P
160
Maximum allowable lead temperature TL, ambient temperature Ta (C)
Size 140 Solder round 120 Substrate 100 80 60 40 20 0 0 Ta-P Ta-L c Size Thickness a b c
Glass-Epoxy Substrate 10 mm*10 mm 50 mm*50 mm 1.5 mm
TL
a b
1
2
3
4
5
6
Allowable power dissipation P (W)
VZ - IZ
100 Ta = 25C Typical 10 100000
PRSM - tw
PRSM
Surge absorption capability PRSM (W)
10000 Ta = 25C tw
Zener current IZ
(A)
Rectangular Pulse 1000 Design Recommended region 100
1
0.1
0.01 36
37
38
39
40
41
42 43
44
45
46
47 48
10 0.1
1
10
100
Zener voltage VZ
(V)
Pulse width (ms)
Rth - t
100 100
IF - VF
(A)
Transient Thermal Resistance Rth (C)
10
Instantaneous forward current IF
Rth (j-a)
Tj = 150C 10
Tj = 100C Tj = 25C
1 Rth (j-D)
1
0.1
0.01 0.001
Typical Rth (j-D): Transient Thermal Resistance between junction to anode electrode. 0.01 0.1 1 10 100 1000
0.1 0.6
0.8
1
1.2
1.4
1.6
1.8
Time t (s)
Instantaneous forward voltage VF
(V)
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