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| RN47A4 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) Silicon PNP Epitaxial Type (PCT process) RN47A4 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. * * * * Including two devices in USV (ultra super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resistor Values Q1 C R1 R2 R1: 47 k R2: 47 k E R1 R2 R1: 10 k R2: 47 k E Q2 C B B Q1: RN1104F Q2: RN2107F Marking Equivalent Circuit (top view) 5 4 5 4 24 Q2 Q1 1 2 3 1 2 3 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-04-12 1/5 RN47A4 Q1 Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating 50 50 10 100 Unit V V V mA Q2 Maximum Ratings (Ta = 25C) Characteristics Symbol VCBO VCEO VEBO IC Rating -50 -50 -6 -100 Unit V V V mA Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Q1, Q2 Common Maximum Ratings (Ta = 25C) Characteristics Symbol PC (Note) Rating 200 150 -55 to 150 Unit mW C C Collector power dissipation Junction temperature Storage temperature range Tj Tstg Note: Total rating 2000-04-12 2/5 RN47A4 Q1 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio Symbol ICBO ICEO IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Cob R1 R1/R2 Test Condition VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 10 V, IC = 0 VCE = 5 V, IC = 10 mA IC = 5 mA, IB = 0.25 mA VCE = 0.2 V, IC = 5 mA VCE = 5 V, IC = 0.1 mA VCE = 10 V, IC = 5 mA VCB = 10 V, IE = 0, f = 1 MHz Min 0.082 80 1.5 1.0 32.9 0.8 Typ. 0.1 250 3 47 1.0 Max 100 500 0.15 0.3 5.0 1.5 6 61.1 1.2 V V V MHz pF k mA Unit nA Q2 Electrical Characteristics (Ta = 25C) Characteristics Symbol ICBO ICEO Test Condition VCB = -50 V, IE = 0 VCE = -50 V, IB = 0 VEB = -6 V, IC = 0 VCE = -5 V, IC = -10 mA IC = -5 mA, IB = -0.25 mA VCE = -0.2 V, IC = -5 mA VCE = -5 V, IC = -0.1 mA VCE = -10 V, IC = -5 mA VCB = -10 V, IE = 0, f = 1 MHz Min -0.081 80 -0.7 -0.5 7 0.170 Typ. -0.1 200 3 10 0.213 Max -100 -500 -0.15 -0.3 -1.8 -1.0 6 13 0.256 V V V MHz pF k Unit nA mA Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input voltage (ON) Input voltage (OFF) Transition frequency Collector output capacitance Input resistor Resistor ratio IEBO hFE VCE (sat) VI (ON) VI (OFF) fT Cob R1 R1/R2 2000-04-12 3/5 RN47A4 Q1 IC - VI (ON) -100 10000 5000 IC - VI (OFF) -30 (mA) Collector current IC Ta = 100C -3 25 -1 -25 Collector current IC -10 (A) 3000 Ta = 100C 1000 500 300 25 -25 -0.3 100 50 30 0.7 1.1 1.3 1.7 Common emitter VCE = 5 V 1.9 2.1 Common emitter VCE = -0.2 V -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 -300 Input voltage VI (ON) (V) Input voltage VI (OFF) (V) hFE - IC -300 0.3 VCE (sat) - IC Ta = 100C 25 -100 -25 Collector-emitter saturation voltage VCE (sat) (V) DC current gain hFE 0.1 Ta = 100C 25 -25 -50 -30 0.05 0.03 Common emitter VCE = 5 V -10 -1 -3 -5 -10 -30 -50 -100 Common emitter IC/IB = 20 0.01 1 3 5 10 30 50 100 Collector current IC (mA) Collector current IC (mA) 2000-04-12 4/5 RN47A4 Q2 IC - VI (ON) 100 10000 Common emitter VCE = 5 V 30 Ta = 100C 10 3000 IC - VI (OFF) (mA) (A) 25 Collector current IC Collector current IC 1000 3 -25 1 300 Ta = 100C 25 -25 100 0.3 Common emitter VCE = 0.2 V 30 0.1 0.1 0.3 1 3 10 30 100 300 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Input voltage VI (ON) (V) Input voltage VI (OFF) (V) hFE - IC VCE (sat) - IC Ta = 100C 25 100 -25 Collector-emitter saturation voltage VCE (sat) (V) 300 0.3 DC current gain hFE 0.1 Ta = 100C 25 -25 50 30 0.05 0.03 Common emitter VCE = 5 V 10 0 3 5 10 30 50 100 Common emitter IC/IB = 20 0.01 1 3 5 10 30 50 100 Collector current IC (mA) Collector current IC (mA) 2000-04-12 5/5 |
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