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DF3A8.2LFU
TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type
DF3A8.2LFU
Diodes for Protecting Against ESD
* Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. Zener voltage correspond to E24 Series. Low total capacitance: CT = 5.0 pF (typ.)
* *
Maximum Ratings (Ta = 25C)
Characteristics Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 200 125 -55 to 125 Unit mW C C
Electrical Characteristics (Ta = 25C)
Characteristics Zener voltage Dynamic impedance Knee dynamic impedance Reverse current Total capacitance Symbol VZ ZZ ZZK IR CT IZ = 5 mA IZ = 5 mA IZ = 0.5 mA VR = 5 V VR = 0 V, f = 1 MHz Test Condition Min 7.8 Typ. 8.2 5.0 Max 8.6 60 100 0.5 Unit V A pF
Guaranteed Level of ESD Immunity
Marking
Equivalent Circuit
(top view)
Test Condition IEC61000-4-2 (contact discharge)
ESD Immunity Level
FU
Q1 6 kV
961001EAA1
Q2
* TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
2000-03-23
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DF3A8.2LFU
IZ - VZ
100 m 100
IF - VF
(A)
1m
Forward current IF
6 7 8 9 10 11 12 13 14 15
Zener current IZ
(mA)
10
10 m
100
10
1 5
1 0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Zener voltage VZ
(V)
Forward voltage VF
(V)
CT - VR
10 Ta = 25C f = 1 MHz
Total capacitance CT
1 0
(pF)
1
2
3
4
5
6
7
8
9
10
Reverse voltage VR
(V)
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