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| 2SC5376F TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376F Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications * * Low Collector Saturation Voltage: VCE (sat) (1) = 15 mV (typ.) @IC = 10 mA/IB = 0.5 mA High Collector Current: IC = 400 mA (max) Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 15 12 5 400 50 100 125 -55 to 125 Unit V V V mA mA mW C C Marking Type Name hFE Classification Equivalent Circuit (top view) FA 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-03-23 1/4 2SC5376F Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Symbol ICBO IEBO hFE (Note) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Collector-emitter on resistance VCE (sat) (1) VCE (sat) (2) VBE (sat) fT Cob Ron ton 0V Switching time Storage time tstg INPUT 300 10 s 600 50 Test Condition VCB = 15 V, IE = 0 VEB = 5 V, IC = 0 VCE = 2 V, IC = 10 mA IC = 10 mA, IB = 0.5 mA IC = 200 mA, IB = 10 mA IC = 200 mA, IB = 10 mA VCE = 2 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz IB = 1 mA, Vin = 1 Vrms, f = 1 kHz Min 300 80 Typ. 15 110 0.87 130 4.2 0.9 Max 0.1 0.1 1000 30 250 1.2 mV mV V MHz pF ns Unit A A Turn-on time OUTPUT 60 85 VCC = 6 V 170 ns VBB = -3 V Falll time tf Duty Cycle < 2% = IB1 = -IB2 = 5 mA 40 ns Note: hFE Classification A: 300 to 600, B: 500 to 1000 2000-03-23 2/4 2SC5376F IC - VCE 1.0 Common emitter Ta = 25C 0.8 10000 5000 3000 hFE - IC Common emitter VCE = 2 V (A) 5 4 3 2 DC current gain hFE 6 0.6 Collector current IC 1000 500 300 Ta = 100C 25 -25 0.4 1 0.2 IB = 0.5 mA 100 50 30 0 0 1 2 3 4 5 10 0.1 0.3 1 3 10 30 100 300 1000 Collector-emitter voltage VCE (V) Collector current IC (mA) VCE (sat) - IC 1000 Common emitter 500 IC/IB = 20 300 50 30 Common emitter IC/IB = 20 Ta = 25C 10 5 3 VBE (sat) - IC Collector-emitter saturation voltage VCE (sat) (mV) 100 50 30 Ta = 100C 10 5 3 -25 25 Base-emitter saturation voltage VBE (sat) (V) 100 300 1000 1 0.5 0.3 1 0.1 0.3 1 3 10 30 0.1 0.1 0.3 1 3 10 30 100 300 500 Collector current IC (mA) Collector current IC (mA) IC - VBE 1000 500 300 100 Cob - VCB Collector output capacitance Cob (pF) Common emitter VCE = 2V IE = 0 A 50 30 f = 1 MHz Ta = 25C (mA) 100 Collector current IC 50 30 Ta = 100C 25 -25 10 10 5 3 5 3 1 0.0 0.4 0.8 1.2 1.6 1 0.1 0.3 1 3 10 30 100 Base-emitter voltage VBE (V) Collector-base voltage VCB (V) 2000-03-23 3/4 2SC5376F PC - Ta 200 (mW) Collector power dissipation PC 160 120 80 40 0 0 25 50 75 100 125 150 Ambient temperature Ta (C) 2000-03-23 4/4 |
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