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| 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications * * * * * High Voltage: VCEO = 50 V High Current: IC = 150 mA (max) High hFE: hFE = 120 to 400 Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1832FT Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 60 50 5 150 30 100 125 -55 to 125 Unit V V V mA mA mW C C Marking Type Name hFE Rank LY 000630EAA1 * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The Toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These Toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of Toshiba products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-07-05 1/3 2SC4738FT Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO IEBO hFE (Note) VCE (sat) fT Cob Test Condition VCB = 60 V, IE = 0 VEB = 5 V, IC = 0 VCE = 6 V, IC = 2 mA IC = 100 mA, IB = 10 mA VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz 80 Min 120 Typ. 0.1 2.0 Max 0.1 0.1 400 0.25 3.5 V MHz pF Unit A A Note: hFE Classification ( ) Marking symbol Y (Y): 120 to 240, GR (G): 200 to 400 2000-07-05 2/3 2SC4738FT IC - VCE 240 6.0 200 5.0 3.0 Common emitter Ta = 25C 2.0 160 1000 500 300 1.0 120 2000 IB - VBE Common emitter VCE = 6 V IC (mA) Collector current (A) IB Base current 100 50 30 Ta = 100C 10 5 3 25 -25 80 0.5 40 IB = 0.2 mA 0 1 2 3 4 5 6 7 0 0 Collector-emitter voltage VCE (V) 1 0.5 hFE - IC 500 0.3 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 hFE 300 Base-emitter voltage VBE Ta = 100C (V) DC current gain 100 25 50 30 Common emitter VCE = 6 V VCE = 1 V 0.3 1 3 10 30 100 300 -25 3000 fT - IC (MHz) Common emitter 1000 500 300 VCE = 10 V Ta = 25C Collector current IC (mA) Transition frequency fT 10 0.1 100 50 30 Collector-emitter saturation voltage VCE (sat) (V) VCE (sat) - IC 0.5 0.3 Common emitter IC/IB = 10 10 0.1 0.3 1 3 10 30 100 300 0.1 0.05 0.03 Ta = 100C 25 -25 0.01 0.1 Collector current IC (mA) PC - Ta 0.3 1 3 10 30 100 300 120 (mW) Collector power dissipation PC Collector current IC (mA) 100 Base-emitter saturation voltage VBE (sat) (V) VBE (sat) - IC 5 3 Common emitter IC/IB = 10 Ta = 25C 1 0.5 0.3 80 60 40 20 0.1 0.1 0.3 1 3 10 30 100 300 0 0 20 40 60 80 100 120 140 Collector current IC (mA) Ambient temperature Ta (C) 2000-07-05 3/3 |
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