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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX84 series Voltage regulator diodes
Product specification Supersedes data of 1996 Apr 26 1999 May 18
Philips Semiconductors
Product specification
Voltage regulator diodes
FEATURES * Total power dissipation: max. 250 mW * Three tolerance series: 1%, 2% and approx. 5% * Working voltage range: nom. 2.4 to 75 V (E24 range) * Non-repetitive peak reverse power dissipation: max. 40 W. APPLICATIONS * General regulation functions. DESCRIPTION Low-power voltage regulator diodes in small SOT23 plastic SMD packages. The diodes are available in the normalized E24 1% (BZX84-A), 2% (BZX84-B) and approx. 5% (BZX84-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.
Top view
handbook, halfpage 2
BZX84 series
PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION
1
2 n.c. 3 3
1
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 18
2
Philips Semiconductors
Product specification
Voltage regulator diodes
MARKING TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1) TYPE NUMBER MARKING CODE(1)
BZX84 series
TYPE NUMBER
MARKING CODE
Marking codes for BZX84-C2V4 to BZX84-C75 BZX84-C2V4 BZX84-C2V7 BZX84-C3V0 BZX84-C3V3 BZX84-C3V6 BZX84-C3V9 BZX84-C4V3 BZX84-C4V7 BZX84-C5V1 BZX84-C5V6 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z1 Z2 Z3 BZX84-C6V2 BZX84-C6V8 BZX84-C7V5 BZX84-C8V2 BZX84-C9V1 BZX84-C10 BZX84-C11 BZX84-C12 BZX84-C13 BZX84-C15 Z4 Z5 Z6 Z7 Z8 Z9 Y1 Y2 Y3 Y4 BZX84-C16 BZX84-C18 BZX84-C20 BZX84-C22 BZX84-C24 BZX84-C27 BZX84-C30 BZX84-C33 BZX84-C36 BZX84-C39 Y5 Y6 Y7 Y8 Y9 Y10 Y11 Y12 Y13 Y14 BZX84-C43 BZX84-C47 BZX84-C51 BZX84-C56 BZX84-C62 BZX84-C68 BZX84-C75 - - - Y15 Y16 Y17 Y18 Y19 Y20 Y21 - - -
Marking codes for BZX84-B2V4 to BZX84-B75 BZX84-B2V4 BZX84-B2V7 BZX84-B3V0 BZX84-B3V3 BZX84-B3V6 BZX84-B3V9 BZX84-B4V3 BZX84-B4V7 BZX84-B5V1 BZX84-B5V6 Z50 Z51 Z52 Z53 Z54 Z55 Z56 Z57 Z58 Z59 BZX84-B6V2 BZX84-B6V8 BZX84-B7V5 BZX84-B8V2 BZX84-B9V1 BZX84-B10 BZX84-B11 BZX84-B12 BZX84-B13 BZX84-B15 Z60 Z61 Z62 Z63 Z64 Z65 Z66 Z67 Z68 Z69 BZX84--B16 BZX84-B18 BZX84-B20 BZX84-B22 BZX84-B24 BZX84-B27 BZX84-B30 BZX84-B33 BZX84-B36 BZX84-B39 Z70 Z71 Z72 Z73 Z74 Z75 Z76 Z77 Z78 Z79 BZX84-B43 BZX84-B47 BZX84-B51 BZX84-B56 BZX84-B62 BZX84-B68 BZX84-B75 - - - Z80 Z81 Z82 Z83 Z84 Z85 Z86 - - -
Marking codes for BZX84-A2V4 to BZX84-A75 BZX84-A2V4 BZX84-A2V7 BZX84-A3V0 BZX84-A3V3 BZX84-A3V6 BZX84-A3V9 BZX84-A4V3 BZX84-A4V7 BZX84-A5V1 BZX84-A5V6 Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. Y50 Y51 Y52 Y53 Y54 Y55 Y56 Y57 Y58 Y59 BZX84-A6V2 BZX84-A6V8 BZX84-A7V5 BZX84-A8V2 BZX84-A9V1 BZX84-A10 BZX84-A11 BZX84-A12 BZX84-A13 BZX84-A15 Y60 Y61 Y62 Y63 Y64 Y65 Y66 Y67 Y68 Y69 BZX84-A16 BZX84-A18 BZX84-A20 BZX84-A22 BZX84-A24 BZX84-A27 BZX84-A30 BZX84-A33 BZX84-A36 BZX84-A39 Y70 Y71 Y72 Y73 Y74 Y75 Y76 Y77 Y78 Y79 BZX84-A43 BZX84-A47 BZX84-A51 BZX84-A56 BZX84-A62 BZX84-A68 BZX84-A75 - - - Y80 Y81 Y82 Y83 Y84 Y85 Y86 - - -
1999 May 18
3
Philips Semiconductors
Product specification
Voltage regulator diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot PZSM Tstg Tj Note 1. Device mounted on an FR4 printed circuit-board. ELECTRICAL CHARACTERISTICS Total BZX84-A and B and C series Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZX84-A/B/C2V4 BZX84-A/B/C2V7 BZX84-A/B/C3V0 BZX84-A/B/C3V3 BZX84-A/B/C3V6 BZX84-A/B/C3V9 BZX84-A/B/C4V3 BZX84-A/B/C4V7 BZX84-A/B/C5V1 BZX84-A/B/C5V6 BZX84-A/B/C6V2 BZX84-A/B/C6V8 BZX84-A/B/C7V5 BZX84-A/B/C8V2 BZX84-A/B/C9V1 BZX84-A/B/C10 BZX84-A/B/C11 BZX84-A/B/C12 BZX84-A/B/C13 BZX84-A/B/C15 to 75 VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 4 V VR = 4 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 8 V VR = 8 V VR = 8 V VR = 0.7VZnom 50 20 10 5 5 3 3 3 2 1 3 2 1 700 500 200 100 100 100 50 CONDITIONS IF = 10 mA; see Fig.3 0.9 PARAMETER continuous forward current non-repetitive peak reverse current tp = 100 s; square wave; Tj = 25 C prior to surge total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature Tamb = 25 C; note 1 tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.2 CONDITIONS - MIN.
BZX84 series
MAX. 200
UNIT mA
see Tables 1 and 2 - - -65 -65 250 40 +150 +150 mW W C C
MAX. V A A A A A A A A A A A A A nA nA nA nA nA nA nA
UNIT
1999 May 18
4
1999 May 18 5
Philips Semiconductors
Table 1 Per type BZX84-A/B/C2V4 to A/B/C24 Tj = 25 C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 5 mA Tol. 1% (A) MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 2.37 2.67 2.97 3.26 3.56 3.86 4.25 4.65 5.04 5.54 6.13 6.73 7.42 8.11 9.00 9.90 10.80 11.88 12.87 14.85 15.84 17.82 19.80 21.78 23.76 MAX. 2.43 2.73 3.03 3.34 3.64 3.94 4.35 4.75 5.16 5.66 6.27 6.87 7.58 8.29 9.20 10.10 11.11 12.12 13.13 15.15 16.16 18.18 20.20 22.22 24.24 Tol. 2% (B) MIN. 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.80 11.80 12.70 14.70 15.70 17.60 19.60 21.60 23.50 MAX. 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.20 11.20 12.20 13.30 15.30 16.30 18.40 20.40 22.40 24.50 Tol. approx. 5% (C) MIN. 2.2 2.5 2.8 3.1 3.4 3.7 4.0 4.4 4.8 5.2 5.8 6.4 7.0 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 MAX. 2.6 2.9 3.2 3.5 3.8 4.1 4.6 5.0 5.4 6.0 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 DIFFERENTIAL RESISTANCE rdif () at at IZtest = 1 mA IZtest = 5 mA TYP. MAX. TYP. MAX. 275 300 325 350 375 400 410 425 400 80 40 30 30 40 40 50 50 50 50 50 50 50 60 60 60 600 600 600 600 600 600 600 500 480 400 150 80 80 80 100 150 150 150 170 200 200 225 225 250 250 70 75 80 85 85 85 80 50 40 15 6 6 6 6 6 8 10 10 10 10 10 10 15 20 25 100 100 95 95 90 90 90 80 60 40 10 15 15 15 15 20 20 25 30 30 40 45 55 55 70 MIN. -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -3.5 -2.7 -2.0 0.4 1.2 2.5 3.2 3.8 4.5 5.4 6.0 7.0 9.2 10.4 12.4 14.4 16.4 18.4 TYP. -1.6 -2.0 -2.1 -2.4 -2.4 -2.5 -2.5 -1.4 -0.8 1.2 2.3 3.0 4.0 4.6 5.5 6.4 7.4 8.4 9.4 11.4 12.4 14.4 16.4 18.4 20.4 MAX. 0 0 0 0 0 0 0 0.2 1.2 2.5 3.7 4.5 5.3 6.2 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 18.0 20.0 22.0 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 4 and 5) DIODE CAP. NON-REPETITIVE Cd (pF) PEAK REVERSE at f = 1 MHz; CURRENT VR = 0 V IZSM (A) at tp = 100 s; Tamb = 25 C MAX. 450 450 450 450 450 450 450 300 300 300 200 200 150 150 150 90 85 85 80 75 75 70 60 60 55 MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 4.0 4.0 3.0 3.0 2.5 2.5 2.5 2.0 1.5 1.5 1.5 1.25 1.25
Voltage regulator diodes
BZX84-A or B or C XXX
BZX84 series
Product specification
1999 May 18 6
Philips Semiconductors
Table 2 Per type BZX84-A/B/C27 to A/B/C75 Tj = 25 C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZtest = 2 mA Tol. 1% (A) MIN. 27 30 33 36 39 43 47 51 56 62 68 75 26.73 29.70 32.67 35.64 38.61 42.57 46.53 50.49 55.44 61.38 67.32 74.25 MAX. 27.27 30.30 33.33 36.36 39.39 43.43 47.47 51.51 56.56 62.62 68.68 75.75 Tol. 2% (B) MIN. 26.50 29.40 32.30 35.30 38.20 42.10 46.10 50.00 54.90 60.80 66.60 73.50 MAX. 27.50 30.60 33.70 36.70 39.80 43.90 47.90 52.00 57.10 63.20 69.40 76.50 Tol. approx. 5% (C) MIN. 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 MAX. 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 DIFFERENTIAL RESISTANCE rdif () at IZtest = 0.5 m A TYP. 65 70 75 80 80 85 85 90 100 120 150 170 MAX. 300 300 325 350 350 375 375 400 425 450 475 500 at IZtest = 2 mA TYP. 25 30 35 35 40 45 50 60 70 80 90 95 TEMP. COEFF. DIODE CAP. NON-REPETITIVE SZ (mV/K) Cd (pF) PEAK REVERSE at IZtest = 2 mA at f = 1 MHz; CURRENT (see Figs 4 and 5) VR = 0 V IZSM (A) at tp = 100 ; Tamb = 25 C MAX. 50 50 45 45 45 40 40 40 40 35 35 35 MAX. 1.0 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.3 0.25 0.2
Voltage regulator diodes
BZX84-A or B or C XXX
MAX. MIN. TYP. MAX. 80 80 80 90 130 150 170 180 200 215 240 255 21.4 24.4 27.4 30.4 33.4 37.6 42.0 46.6 52.2 58.8 65.6 73.4 23.4 26.6 29.7 33.0 36.4 41.2 46.1 51.0 57.0 64.4 71.7 80.2 25.3 29.4 33.4 37.4 41.2 46.6 51.8 57.2 63.8 71.6 79.8 88.6
BZX84 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator diodes
THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed circuit-board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS
BZX84 series
VALUE 330 500
UNIT K/W K/W
1999 May 18
7
Philips Semiconductors
Product specification
Voltage regulator diodes
GRAPHICAL DATA
MBG801
BZX84 series
103 handbook, halfpage PZSM (W) 102
MBG781
handbook, halfpage
300
IF (mA) 200
(1)
10
(2)
100
1 10-1
1
duration (ms)
10
0 0.6
0.8
VF (V)
1.0
(1) Tj = 25 C (prior to surge). (2) Tj = 150 C (prior to surge).
Tj = 25 C.
Fig.2
Maximum permissible non-repetitive peak reverse power dissipation versus duration.
Fig.3
Forward current as a function of forward voltage; typical values.
MBG783
MBG782
handbook, halfpage
0
handbook, halfpage
10
12 SZ (mV/K) -1 4V3 SZ (mV/K) 5 11 10 9V1 8V2 7V5 6V8 3V9 3V6
6V2 5V6 5V1 4V7
-2
3V3 3V0 2V4 2V7
0
-3
0
20
40
IZ (mA)
60
-5
0
4
8
12
16
IZ (mA)
20
BZX84-A/B/C2V4 to A/B/C4V3. Tj = 25 to 150 C.
BZX84-A/B/C4V7 to A/B/C12. Tj = 25 to 150 C.
Fig.4
Temperature coefficient as a function of working current; typical values.
Fig.5
Temperature coefficient as a function of working current; typical values.
1999 May 18
8
Philips Semiconductors
Product specification
Voltage regulator diodes
PACKAGE OUTLINE Plastic surface mounted package; 3 leads
BZX84 series
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
1999 May 18
9
Philips Semiconductors
Product specification
Voltage regulator diodes
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
BZX84 series
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 May 18
10
Philips Semiconductors
Product specification
Voltage regulator diodes
NOTES
BZX84 series
1999 May 18
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 18
Document order number:
9397 750 05931

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